CHANNEL 200V 0.047 TO-247 PowerMESHMOSFET TYPE STW50NB20 DS(

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CHANNEL 200V 0.047 TO-247 PowerMESHMOSFET TYPE STW50NB20 DS(

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STW50NB20
CHANNEL 200V 0.047 TO-247 PowerMESHMOSFET
TYPE STW50NB20
DS(on) 0.055
TYPICAL RDS(on) 0.047 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprietary edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVE HIGH CURRENT, HIGH SPEED SWITCHING
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor Storage Temperature Max. Operating Junction Temperature
Value 2.24
50A, di/dt A/µs, V(BR)DSS, TJMAX
Unit
Pulse width limited safe operating area
July 1998
STW50NB20
THERMAL DATA
thj-case
Rthj-amb
thc-sink
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
0.44
oC/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value 1000 Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions Min. Typ. Max. Unit
Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current
Symbol GS(th) DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions Min. Typ. 0.047 Max. 0.055 Unit
State Drain Current D(on) DS(on)max
DYNAMIC
Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions D(on) DS(on)max Min. Typ. 3400 4600 1250 Max. Unit
STW50NB20
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. Typ. Max. Unit
SWITCHING
Symbol r(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs Test Conditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STW50NB20
TO-247 MECHANICAL DATA
MIN. 3.55 15.3 19.7 14.2 34.6 3.65 0.079 0.140 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
STW50NB20
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A.

CHANNEL 200V 0.047 TO-247 PowerMESHMOSFET TYPE STW50NB20 DS(

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