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64Mx72 bits Profile Registered SDRAM DIMM HYMD264G726B(L)4M-M/K/H/L
Revision History Defined Target Spec. Defined Cap. Value Draft Date Oct. 2002 Dec. 2003 Remark Preliminary
This document general product description subject change without notice. Hynix Semiconductor does assume responsibility circuits described. patent licenses implied. Rev. 0.2/ Dec. 2003
64Mx72 bits Profile Registered SDRAM DIMM HYMD264G726B(L)4M-M/K/H/L
DESCRIPTION
Hynix HYMD264G726B(L)4M-M/K/H/L series Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which organized 64Mx72 high-speed memory arrays. Hynix HYMD264G726B(L)4M-M/K/H/L series consists eighteen 64Mx4 SDRAM 400mil TSOP packages 184pin glass-epoxy substrate. Hynix HYMD264G726B(L)4M-M/K/H/L series provide high performance 8-byte interface 5.25" width form factor industry standard. suitable easy interchange addition. Hynix HYMD264G726B(L)4M-M/K/H/L series designed high speed 133MHz offers fully synchronous operations referenced both rising falling edges differential clock inputs. While addresses control inputs latched rising edges clock, Data, Data strobes Write data masks inputs sampled both rising falling edges data paths internally pipelined 2-bit prefetched achieve very high bandwidth. input output voltage levels compatible with SSTL_2. High speed frequencies, programmable latencies burst lengths allow variety device operation high performance memory system. Hynix HYMD264G726B(L)4M-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function implemented serial 2,048-bit EEPROM. first bytes serial data programmed Hynix identify DIMM type, capacity other information DIMM last bytes available customer.
FEATURES
512MB (64M Profile Registered DIMM based 64Mx4 SDRAM JEDEC Standard 184-pin dual in-line memory module (DIMM) Error Check Correction (ECC) Capability Registered inputs with one-clock delay Phase-lock loop (PLL) clock driver reduce loading 2.5V 0.2V VDDQ Power supply inputs outputs compatible with SSTL_2 interface Fully differential clock operations /CK) with 100MHz/125MHz/133MHz Programmable Latency supported Programmable Burst Length with both sequential interleave mode tRAS Lock-out function supported Internal four bank operations with single pulsed Auto refresh self refresh supported 8192 refresh cycles 64ms
ORDERING INFORMATION
Part
HYMD264G726B(L)4M-M HYMD264G726B(L)4M-K HYMD264G726B(L)4M-H HYMD264G726B(L)4M-L VDD=2.5V VDDQ=2.5V
Power Supply
Clock Frequency
133MHz (*DDR266:2-2-2) 133MHz (*DDR266A)
Interface
Form Factor
SSTL_2 133MHz (*DDR266B) 100MHz (*DDR200)
184pin Profile Registered DIMM 5.25 0.15 inch
JEDEC Defined Specifications compliant
This document general product description subject change without notice. Hynix Semiconductor does assume responsibility circuits described. patent licenses implied. Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
DESCRIPTION
CK0, /CK0 CKE0 /RAS, /CAS, BA0, DQ0~DQ63 CB0~CB7 DQS0~DQS17 DM0~7 /RESET Description Differential Clock Inputs Chip Select Input Clock Enable Input Commend Sets Inputs Address Bank Address Data Inputs/Outputs Data Strobe Inputs/Outputs Data Strobe Inputs/Outputs Data-in Mask Power Supply Reset Enable VDDQ VREF VDDSPD SA0~SA2 VDDID FETEN Description Power Supply Ground Reference Power Supply Power Supply E2PROM Address Inputs E2PROM Clock E2PROM Data Write Protect Flag Identification Flag Connection Enable
ASSIGNMENT
Name VREF DQS0 /RESET DQS1 VDDQ NC(CK1*) NC(CK1*) DQ10 DQ11 CKE0 VDDQ DQ16 DQ17 DQS2 DQ18 VDDQ DQ19 DQ32 VDDQ DQ33 DQS4 DQ34 DQ35 DQ40 Name DQ24 DQ25 DQS3 DQ26 DQ27 DQS8 Name VDDQ DQ41 /CAS DQS5 DQ42 DQ43 DQ48 DQ49 VDDQ DQS6 DQ50 DQ51 VDDID DQ56 DQ57 DQS7 DQ58 DQ59 Name VDDQ DQS9 NC(FETEN) VDDQ DQ12 DQ13 DQS10 DQ14 DQ15 CKE1* VDDQ NC(BA2*) DQ20 DQ21 DQS11 DQ22 DQ23 DQ36 DQ37 DQS13 DQ38 DQ39 DQ44 Name DQ28 DQ29 VDDQ DQS12 DQ30 DQ31 VDDQ /CK0 DQS17 VDDQ Name /RAS DQ45 VDDQ /CS0 /CS1* DQ46 DQ47 VDDQ DQ52 DQ53 NC(A13) DQ54 DQ55 VDDQ DQ60 DQ61 DQ62 DQ63 VDDQ VDDSPD
These used this module used other module 184pin DIMM family
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
FUNCTIONAL BLOCK DIAGRAM
/RCS0 DQS0
DQS9
DQS10
DQS1
DQS11
DQ12 DQ13 DQ14 DQ15
DQS2
DQ10 DQ11
DQS12
DQ20 DQ21 DQ22 DQ23
DQS3
DQ16 DQ17 DQ18 DQ19
DQS13
DQ28 DQ29 DQ30 DQ31
DQS4
DQ24 DQ25 DQ26 DQ27
DQS14
DQ36 DQ37 DQ38 DQ39
DQS5
DQ32 DQ33 DQ34 DQ35
DQS15
DQ44 DQ45 DQ46 DQ47
DQS6
DQ40 DQ41 DQ42 DQ43
Serial
DQS16
DQ52 DQ53 DQ54 DQ55
DQS7
DQ48 DQ49 DQ50 DQ51
DQS17
DQ60 DQ61 DQ62 DQ63
VDDSPD
DQS8
VDDQ VREF VDDID
Strap:see Note
/CS0 BA0-BA1 A0-A12 /RAS /CAS CKE0 /PCK
/RCS0 ->/CS0 SDRAMs D0-D17 RBA0-RBA1-> BA0-BA1:SDRAMs D0-D17 -RA12 ->A0 SDRAMs /RRAS /RAS SDRAMs /RCAS /CAS SDRAMs RCKE0 SDRAMs /RWE SDRAMs /RESET CK0, /CK0 PLL* Wire clock loading table/wiring diagrams
Notes: DQ-to-I/O wiring changed within byte DQ/DQS/DM/CKE/CS relationships must maintained shown. DQ/DQS resistors should Ohms. VDDID strap connections(for memory device VDD, VDDQ); Strap :(open) VDD=VDDQ Strap (Vss) VDD=VDDQ Address control resistors should Ohms
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Ambient Temperature Storage Temperature Voltage relative Voltage relative Voltage VDDQ relative Output Short Circuit Current Power Dissipation Soldering Temperature Time TSTG VIN, VOUT VDDQ TSOLDER Symbol -0.5 -0.5 -0.5 Rating
Unit
Note Operation above absolute maximum rating adversely affect device reliability
OPERATING CONDITIONS (TA=0 Voltage referenced VSS=
Parameter Power Supply Voltage Power Supply Voltage Input High Voltage Input Voltage Termination Voltage Reference Voltage VDDQ VREF Symbol VREF 0.15 -0.3 VREF 0.04 0.49*VDDQ Typ. VREF 0.5*VDDQ VDDQ VREF 0.15 VREF 0.04 0.51*VDDQ Unit Note
Note VDDQ must exceed level VDD. (min) acceptable -1.5V pulse width with duration. value VREF approximately equal 0.5VDDQ.
OPERATING CONDITIONS (TA=0 Voltage referenced
Parameter Input High (Logic Voltage, signals Input (Logic Voltage, signals Input Differential Voltage, inputs Input Crossing Point Voltage, inputs Symbol VIH(AC) VIL(AC) VID(AC) VIX(AC) 0.5*VDDQ-0.2 VREF 0.31 VREF 0.31 VDDQ 0.5*VDDQ+0.2 Unit Note
Note magnitude difference between input level input /CK. value expected equal 0.5*V transmitting device must track variations level same.
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
OPERATING TEST CONDITIONS (TA=0 70oC, Voltage referenced
Parameter Reference Voltage Termination Voltage Input High Level Voltage (VIH, min) Input Level Voltage (VIL, max) Input Timing Measurement Reference Level Voltage Output Timing Measurement Reference Level Voltage Input Signal maximum peak swing Input minimum Signal Slew Rate Termination Resistor (RT) Series Resistor (RS) Output Load Capacitance Access Time Measurement (CL) Value VDDQ VDDQ VREF 0.31 VREF 0.31 VREF Unit V/ns
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
CAPACITANCE (TA=25oC, f=100MHz
Parameter Input Capacitance Input Capacitance Input Capacitance Input Capacitance Input Capacitance Data Input Output Capacitance Data Input Output Capacitance A12, BA0, /RAS, /CAS, CKE0 CK0, /CK0 DQ63, DQS0 DQS17 Symbol CIN1 CIN2 CIN3 CIN4 CIN5 CIO1 CIO2 Unit
Note min. max., VDDQ 2.3V 2.7V, VODC VDDQ/2, VOpeak-to-peak 0.2V Pins under test tied GND. These values guaranteed design tested sample basis only.
OUTPUT LOAD CIRCUIT
RT=50
Output Zo=50 VREF
CL=30pF
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
CHARACTERISTICS (TA=0 70oC, Voltage referenced
Parameter Input Leakage Current
Add, CMD, /CS, /CKE
Symbol
Min.
Unit
Note
0.76
Output Leakage Current Output High Voltage Output Voltage Note
0.76
-15.2mA +15.2mA
3.6V, other pins tested under DOUT disabled, VOUT=0 2.7V
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
CHARACTERISTICS (TA=0 70oC, Voltage referenced
Speed Parameter Symbol Test Condition
bank; Active Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM inputs changing twice clock cycle; address control inputs changing once clock cycle bank; Active Read Precharge; Burst Length=2; tRC=tRC(min); tCK=tCK(min); address control inputs changing once clock cycle banks idle; Power down mode; CKE=Low, tCK=tCK(min) /CS=High, banks idle; tCK=tCK(min); CKE= High; address control inputs changing once clock cycle. VREF bank active; Power down mode; CKE=Low, tCK=tCK(min) /CS=HIGH; CKE=HIGH; bank; ActivePrecharge; tRC=tRAS(max); tCK=tCK(max); inputs changing twice clock cycle; Address other control inputs changing once clock cycle Burst=2; Reads; Continuous burst; bank active; Address control inputs changing once clock cycle; tCK=tCK(min); IOUT=0mA Burst=2; Writes; Continuous burst; bank active; Address control inputs changing once clock cycle; tCK=tCK(min); inputs changing twice clock cycle tRC=tRFC(min) 8*tCK DDR200 100Mhz, 10*tCK DDR266A DDR266B 133Mhz; distributed refresh Normal Self Refresh Current
IDD6
Unit Note
Operating Current
IDD0
2810
2630
2630
2450
Operating Current
IDD1
2810
2630
2630
2450
Precharge Power Down Standby Current
IDD2P
Idle Standby Current
IDD2F
1550
1460
1460
1370
Active Power Down Standby Current
IDD3P
Active Standby Current
IDD3N
1730
1640
1640
1550
Operating Current
IDD4R
3710
3350
3350
3170
Operating Current
IDD4W
3890
3710
3710
3530
Auto Refresh Current
IDD5
3590
3410
3410
3230
CKE=<0.2V; External clock tCK=tCK(min) Power
Operating Current Four Bank Operation
IDD7
Four bank interleaving with BL=4 Refer following page detailed test condition
5510
5330
5330
5150
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
CHARACTERISTICS operating conditions unless otherwise noted)
DDR266(2-2-2) Parameter Cycle Time Auto Refresh Cycle Time Active Time Active Read with Auto Precharge Delay Address Column Address Delay Active Active Delay Column Address Column Address Delay Precharge Time Write Recovery Time Write Read Command Delay Auto Precharge Write Recovery Precharge Time System Clock Cycle Time 0.45 0.45 -0.75 0.55 0.55 0.75 0.45 0.45 -0.75 0.55 0.55 0.75 0.45 0.45 -0.75 0.55 0.55 0.75 0.45 0.45 -0.8 0.55 0.55 Symbol tRFC tRAS tRAP 120K 120K 120K 120K DDR266A DDR266B DDR200
Unit Note
tRCD tRRD tCCD tWTR tDAL
(tWR/tCK) (tRP/tCK)
(tWR/tCK) (tRP/tCK)
(tWR/tCK) (tRP/tCK)
(tWR/tCK) (tRP/tCK)
Clock High Level Width Clock Level Width Data-Out edge Clock edge Skew DQS-Out edge Clock edge Skew DQS-Out edge Data-Out edge Skew Data-Out hold time from
tDQSCK
-0.75
0.75
-0.75
0.75
-0.75
0.75
-0.8
tDQSQ
-tQHS (tCL,tCH)
tHPmin -tQHS (tCL,tCH)
tHPmin -tQHS (tCL,tCH)
tHPmin -tQHS (tCL,tCH)
Clock Half Period Data Hold Skew Factor Valid Data Output Window Data-out high-impedance window from Data-out low-impedance window from
tQHS
0.75
0.75
0.75
0.75
tQH-tDQSQ -0.75 0.75
tQH-tDQSQ -0.75 0.75
tQH-tDQSQ -0.75 0.75
tQH-tDQSQ -0.8
-0.75
0.75
-0.75
0.75
-0.75
0.75
-0.8
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
CHARACTERISTICS operating conditions unless otherwise noted)
DDR266(2-2-2) Parameter Input Setup Time (fast slew rate) Input Hold Time (fast slew rate) Input Setup Time (slow slew rate) Input Hold Time (slow slew rate) Input Pulse Width Write High Level Width Write Level Width Clock First Rising edge DQS-In Data-In Setup Time DQS-In Data-in Hold Time DQS-In Input Pulse Width Read Preamble Time Read Postamble Time Write Preamble Setup Time Write Preamble Hold Time Write Postamble Time Mode Register Delay Exit Self Refresh Execute Command Average Periodic Refresh Interval Note This calculation accounts tDQSQ(max), pulse width distortion on-chip circuit jitter. Data sampled rising edges clock A0~A12, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE. command/address input slew rate >=1.0V/ns command/address input slew rate >=0.5V/ns <1.0V/ns This derating table used increase tIS/tIH case where input slew-rate below 0.5V/ns. Input Setup Hold Slew-rate Derating Table. Input Setup Hold Slew-rate V/ns Delta +100 Delta Symbol tIPW tDQSH tDQSL tDQSS 0.35 0.35 0.72 1.28 0.35 0.35 0.75 1.25 0.35 0.35 0.75 1.25 0.35 0.35 0.75 1.25 6,7, 11~13 6,7, 11~13 2,3,5,6 2,3,5,6 2,4,5,6 2,4,5,6 DDR266A DDR266B DDR200
Unit Note
continued
tDIPW tRPRE tRPST tWPRES tWPREH tWPST tMRD tXSC tREFI
1.75 0.25
15.6
1.75 0.25
15.6
1.75 0.25
15.6
0.25
15.6
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
slew rates >=1.0V/ns These parameters quarantee device timing, they necessarily tested each device, they quaranteed design tester correlation. Data latched both rising falling edges Data Strobes(LDQS/UDQS) LDM/UDM. Minimum cycles stable input clocks after Self Refresh Exit command, where held high, required complete Self Refresh Exit lock internal circuit SDRAM. (tCL, tCH) refers smaller actual clock time actual clock high time provided device (i.e. this value greater than minimum specification limits tCH). minimum half clock period given cycle defined clock high clock (tCH, tCL). tQHS consists tDQSQmax, pulse width distortion on-chip clock circuits, data skew output pattern effects p-channel n-channel variation output drivers. This derating table used increase tDS/tDH case where input slew-rate below 0.5V/ns. Input Setup Hold Slew-rate Derating Table. Input Setup Hold Slew-rate V/ns Delta +150 Delta +150
Setup/Hold Plateau Derating. This derating table used increase tDS/tDH case where input level flat below VREF +/-310mV duration 2ns. Input Level +280 Delta Delta
Setup/Hold Delta Inverse Slew Rate Derating. This derating table used increase tDS/tDH case where slew rates differ. Delta Inverse Slew Rate calculated (1/SlewRate1)-(1/SlewRate2). example, slew rate 1=0.5V/ns Slew Rate2 0.4V/n then Delta Inverse Slew Rate -0.5ns/V. (1/SlewRate1)-(1/SlewRate2) ns/V +/-0.25 Delta +100 Delta +100
DQS, input slew rate specified prevent double clocking data preserve setup hold times. Signal transi tions through region must monotonic. tDAL (tDPL (tRP each terms above, already integer, round next highest integer. equal actual system clock cycle time. Example: DDR266B CL=2.5 tDAL (2.00) (2.67) Round each non-integer next highest integer: (3), tDAL clock parts which internal lockout circuit, Active Read with Auto precharge delay should tRAS BL/2 tCK. transitions occur same access time windows valid data trasitions. These parameters referenced specific voltage level specify when device output longer driving (HZ), begins driving (LZ).
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
SIMPLIFIED COMMAND TRUTH TABLE
Command Extended Mode Register Mode Register Device Deselect Operation Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge Banks Precharge selected Bank Read Burst Stop Auto Refresh Entry Self Refresh Exit Entry Precharge Power Down Mode Exit Active Power Down Mode Entry Exit CKEn-1 CKEn /RAS /CAS
ADDR
A10/ code code
Note
H=Logic High Level, L=Logic Level, X=Don't Care, V=Valid Data Input, Code=Operand Code, NOP=No Operation Note states Don't Care. Refer below Write Mask Truth Table. Code(Operand Code) consists A0~A12 BA0~BA1 used Mode Registering duing Extended MRS. Before entering Mode Register mode, banks must precharge state command issued after period from Prechagre command. Read with Autoprecharge command detected memory component CK(n), then there will command presented activated bank until CK(n+BL/2+tRP). Write with Autoprecharge command detected memory component CK(n), then there will command presented activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In Prechage delay(tDPL) which also called Write Recovery Time (tWR) needed guarantee that last data been completely written. A10/AP High when Precharge command being issued, BA0/BA1 ignored banks selected precharged.
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
PACKAGE DIMENSIONS
Front
133.35 (5.25) 128.95 (5.077) (2X)4.0 (0.157) 2.50 (0.10 Min) 3.99 (0.157max)
Register
19.80 (0.78)
2.50
Back
(Front)
Register
1.27+/-0.10 (0.05+/-0.004)
Units: Millimeters/(Inches)
Rev. 0.2/ Dec. 2003
10.0 (0.393) 17.80 (0.7) 30.48 (1.2)
Side
SERIAL PRESENCE DETECT
SPECIFICATION
(64Mx72 Profile REG. DIMM)
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
SERIAL PRESENCE DETECT
Byte# Function Description Number Bytes written into serial memory module manufacturer Total number Bytes device Fundamental memory type Number address this assembly Number column address this assembly Number physical banks DIMM Module data width Module data width (continued) Module voltage Interface levels(VDDQ) SDRAM cycle time Latency=2.5(tCK) SDRAM access time from clock CL=2.5 (tAC) Module configuration type Refresh rate type Primary SDRAM width Error checking SDRAM data width Minimum clock delay back-to-back random column address(tCCD) Burst lengths supported Number banks each SDRAM latency supported latency latency SDRAM module attributes 7.5ns 8.0ns +/-0.8ns 20ns 15ns 20ns 45ns 20ns 15ns 20ns 50ns 1.1ns 1.1ns 0.6ns 0.6ns 70ns 80ns 12ns 0.6ns 0.75ns
Sort
Function Supported Hexa Value Note
Bytes Bytes SDRAM 1Bank Bits SSTL 2.5V 7.5ns +/-0.75ns 7.8us Self refresh 2,4,8 Banks Registered, +/-0.2Voltage tolerance, Concurrent Auto Precharge tRAS Lock 7.5ns 7.5ns +/-0.75ns 15ns 15ns 15ns 45ns 20ns 15ns 20ns 45ns 10ns 10ns +/-0.8ns 7.5ns
SDRAM device attributes General SDRAM cycle time CL=2.0(tCK) SDRAM access time from clock CL=2.0(tAC) SDRAM cycle time CL=1.5(tCK) SDRAM access time from clock CL=1.5(tAC) Minimum precharge time(tRP) Minimum activate active delay(tRRD) Minimum delay(tRCD) Minimum active precharge time(tRAS) Module density Command address signal input setup time(tIS) Command address signal input hold time(tIH) Data signal input setup time(tDS) Data signal input hold time(tDH)
512MB 0.9ns 0.9ns 0.5ns 0.5ns 0.9ns 0.9ns 0.5ns 0.5ns 0.9ns 0.9ns 0.5ns 0.5ns
36~40 Reserved VCSDRAM Minimum active auto-refresh time tRC) Minimum auto-refresh active/auto-refresh command period(tRFC) Maximum cycle time (tCK max) Maximim DQS-DQ skew time(tDQSQ) Maximum read data hold skew factor(tQHS) 60ns 75ns 12ns 0.5ns 0.75ns
Undefined 65ns 75ns 12ns 0.5ns 0.75ns 65ns 75ns 12ns 0.5ns 0.75ns
46~61 Superset information(may used future) Revision code Checksum Bytes 0~62
Undefined Initial release
Rev. 0.2/ Dec. 2003
HYMD264G726B(L)4M-M/K/H/L
SERIAL PRESENCE DETECT
Function Supported Byte 65~71 Function Description Manufacturer JEDEC Code Manufacturer JEDEC Code Blank Undefined Undefined Hynix JEDEC Hynix(Korea Area) HSA(United States Area) HSE(Europe Area) HSJ(Japan Area) Singapore Asia Area 6(8K refresh,4Bank) Hexa Value Note
continued
Manufacturing location
89~90 95~98 99~127
Manufacture part number(Hynix Memory Module) Manufacture part number(Hynix Memory Module) Manufacture part number(Hynix Memory Module) Manufacture part number (DDR SDRAM) Manufacture part number(Memory density) Manufacture part number(Module Depth) Manufacture part number(Module Depth) Manufacture part number(Module type) Manufacture part number(Data width) -Manufacture part number(Data width) Manufacture part number(Refresh, Bank.) Manufacture part number(Component Generation) Manufacture part number(Component configuration) Manufacture part number(Low Profile) Manufacture part number(Hyphen) Manufacture part number(Minimum cycle time) Manufacture part number(T.B.D) Manufacture revision code(for Component) Manufacture revision code (for PCB) Manufacturing date(Year) Manufacturing date(Week) Module serial number Manufacturer specific data (may used future)
128~255 Open customer
Note
bank address excluded This value based component specification These bytes programmed code date week date year These bytes apply Hynix's Module Serial Number system These bytes undefined coded `00h' Refer Hynix Site
Byte 85~86, power part
Function Supported Byte Function Description Manufacture part number(Low power part) Manufacture part number(Component configuration) Hexa Value Note
Rev. 0.2/ Dec. 2003
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