High current gain High collector current Type Marking O

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High current gain High collector current Type Marking O

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High current gain High collector current
Type
Marking
Ordering Code Q62702-C1137 Q62702-C1138
Configuration
Package1) TO-92
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, Junction temperature Storage temperature range Thermal Resistance Junction ambient Junction case2)
Symbol VCE0 VCB0 VEB0 Ptot Tstg
Values
Unit
detailed information chapter Package Outlines. Mounted heat sink
Semiconductor Group
5.91
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current current gain 1000 VCEsat VBEsat IEB0 4000 2000 10000 4000 20000 10000 10000 4000 70000 50000 V(BR)EB0 ICB0 V(BR)CE0 V(BR)CB0 Values typ. max. Unit
Collector-emitter saturation voltage1) Base-emitter saturation voltage1)
Pulse test:
Semiconductor Group
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics Transition frequency Output capacitance Cobo Values typ. max. Unit
Total power dissipation Ptot (TA;
Collector cutoff current ICB0 (TA)
Semiconductor Group
Permissible pulse load RthJA (tp)
Transition frequency (IC)
Collector-emitter saturation voltage VCEsat (IC) 1000, parameter
Base-emitter saturation voltage VBEsat (IC) 1000, parameter
Semiconductor Group
current gain (IC)
Capacitance (VEB, VCB)
Semiconductor Group

High current gain High collector current Type Marking O

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