High current gain High collector current collector-emitter saturation

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High current gain High collector current collector-emitter saturation

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High current gain High collector current collector-emitter saturation voltage Complementary types: 337, (NPN)
Type 327-16 327-25 327-40 328-16 328-25 328-40
Marking
Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2
Configuration
Package1) TO-92
detailed information chapter Package Outlines.
Semiconductor Group
5.91
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, Junction temperature Storage temperature range Thermal Resistance Junction ambient Junction case1)
Symbol VCE0 VCB0 VEB0 Ptot Tstg
Values
Unit
Mounted heat sink
Semiconductor Group
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current current gain1) 327/16; 328/16 327/25; 328/25 327/40; 328/40 327/16; 328/16 327/25; 328/25 327/40; 328/40 Collector-emitter saturation voltage1) Base-emitter saturation voltage1) VCEsat VBEsat IEB0 V(BR)EB0 ICB0 V(BR)CE0 V(BR)CB0 Values typ. max. Unit
Pulse test:
Semiconductor Group
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics Transition frequency Output capacitance Input capacitance Cobo Cibo Values typ. max. Unit
Semiconductor Group
Total power dissipation Ptot (TA;
Permissible pulse load RthJA (tp)
Collector current (VBE)
Collector cutoff current ICB0 (TA)
Semiconductor Group
current gain (IC)
Transition frequency (IC) MHz,
Collector-emitter saturation voltage VCEsat (IC)
Base-emitter saturation voltage VBEsat (IC)
Semiconductor Group

High current gain High collector current collector-emitter saturation

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