CMOS SRAM 512K Super Power Voltage Full CMOS Static Revision

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CMOS SRAM 512K Super Power Voltage Full CMOS Static Revision

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K6F4008V1D Family
CMOS SRAM
512K Super Power Voltage Full CMOS Static
Revision History
Revision History
Initial Draft Finalized Change tWHZ: 20ns 70ns product Change tDW: 25ns 55ns product 30ns 70ns product Errata correction Removed `TTL Compatible'from Features
Draft Date
March 2000 April 2000
Remark
Preliminary Final
1.01
October 2001
Final
attached datasheets provided SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve right change specifications products. SAMSUNG Electronics will answer your questions about device. have questions, please contact SAMSUNG branch offices.
Revision 1.01 October 2001
K6F4008V1D Family
FEATURES
CMOS SRAM
GENERAL DESCRIPTION
K6F4008V1D families fabricated SAMSUNGs advanced full CMOS process technology. families support small package type user flexibility system design. families also supports data retention voltage battery back-up operation with data retention current.
512K Super Power Voltage Full CMOS Static
Process Technology: Full CMOS Organization: 512K Power Supply Voltage: 3.0~3.6V Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 32-TSOP1-0813.4F
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Range Speed Standby (ISB1, Typ.) 0.5µA Operating (ICC1, Max) Type
K6F4008V1D-F
Industrial(-40~85°C)
3.0~3.6V
551)/70ns
32-TSOP1-0813.4F
parameter measured with 30pF test load.
DESCRIPTION
I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1
FUNCTIONAL BLOCK DIAGRAM
gen. Precharge circuit.
32-STSOP1 (Forward)
Address
select
Memory array 2048 rows columns
Name
Function Chip Select Input Write Enable Input
Name
Function Power Ground
I/O1 I/O8
Data cont
Circuit Column select
Output Enable Input I/O1~I/O8 Data Inputs/Outputs
Data cont
A0~A18 Address Inputs
Column Address
Control logic
SAMSUNG ELECTRONICS CO., LTD. reserves right change products specifications without notice.
-2Revision 1.01 October 2001
K6F4008V1D Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name K6F4008V1D-YF55 K6F4008V1D-YF70 Function
CMOS SRAM
32-sTSOP1-F 55ns, 3.3V 32-sTSOP1-F 70ns, 3.3V
FUNCTIONAL DESCRIPTION
High-Z High-Z Dout
Mode Deselected Output Disabled Read Write
Power Standby Active Active Active
means dont care (Must high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage relative Voltage supply relative Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT TSTG Ratings -0.2 VCC+0.5V -0.2 4.6V Unit
Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. Functional operation should restricted recommended operating condition. Exposure absolute maximum rating conditions extended periods affect reliability.
Revision 1.01 October 2001
K6F4008V1D Family
RECOMMENDED OPERATING CONDITIONS1)
Item Supply voltage Ground Input high voltage Input voltage
Note: TA=-40 85°C, otherwise specified. Overshoot: Vcc+2.0V case pulse width 20ns. Undershoot: -2.0V case pulse width 20ns. Overshoot undershoot sampled, 100% tested.
CMOS SRAM
Symbol
-0.3
Vcc+0.3
Unit
CAPACITANCE1) (f=1MHz, TA=25°C)
Item Input capacitance Input/Output capacitance
Capacitance sampled, 100% tested.
Symbol
Test Condition VIN=0V VIO=0V
Unit
OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current Operating power supply current Average operating current Output voltage Output high voltage Standby Current(TTL) Standby Current (CMOS) Symbol ICC1 ICC2 ISB1 VIN=Vss CS=VIH, OE=VIH WE=VIL, VIO=Vss IIO=0mA, CS=VIL, WE=VIH, VIN=VIL
Cycle time=1µs, 100% duty, IIO=0mA, CS0.2V, VIN0.2V INVCC-0.2V
Test Conditions
Unit 151)
Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIL 2.1mA -1.0mA CS=VIH, Other inputs=VIL CSVcc-0.2V, Other input =0~Vcc
Super power product=7µA with special handling.
Revision 1.01 October 2001
K6F4008V1D Family
OPERATING CONDITIONS
TEST CONDITIONS (Test Load Test Input/Output Reference)
Input pulse level: 2.2V Input rising falling time: Input output reference voltage:1.5V Output load (See right): 100pF+1TTL CL=30pF+1TTL
CMOS SRAM
VTM3) R12)
CL1)
R22)
Including scope capacitance R1=3070, =3150 V=2.8V
CHARACTERISTICS (Vcc=3.0~3.6V, Industrial product: TA=-40 85°C)
Speed Bins Parameter List Symbol Read Cycle Time Address Access Time Chip Select Output Output Enable Valid Output Read Chip Select Low-Z Output Output Enable Low-Z Output Chip Disable High-Z Output Output Disable High-Z Output Output Hold from Address Change Write Cycle Time Chip Select Write Address Set-up Time Address Valid Write Write Write Pulse Width Write Recovery Time Write Output High-Z Data Write Time Overlap Data Hold from Write Time Write Output Low-Z tOLZ tOHZ tWHZ 55ns 70ns Units
DATA RETENTION CHARACTERISTICS
Item data retention Data retention current Data retention set-up time Recovery time Symbol tSDR tRDR Test Condition CSVcc-0.2V Vcc=1.5V, CSVcc-0.2V data retention waveform Unit
Super power product=2µA with special handling.
Revision 1.01 October 2001
K6F4008V1D Family
TIMING DIAGRAMS
TIMING WAVEFORM READ CYCLE(1)
Address Data Previous Data Valid
(Address Controlled, CS=OE=VIL, WE=VIH)
CMOS SRAM
Data Valid
TIMING WAVEFORM READ CYCLE(2)
(WE=VIH)
Address tOLZ Data Valid tOHZ
Data
NOTES (READ CYCLE)
High-Z
tOHZ defined time which outputs achieve open circuit conditions referenced output voltage levels. given temperature voltage condition, tHZ(Max.) less than tLZ(Min.) both given device from device device interconnection.
Revision 1.01 October 2001
K6F4008V1D Family
TIMING WAVEFORM WRITE CYCLE(1) Controlled)
Address tCW(2) tWP(1) tAS(3) Data tWHZ Data Data Undefined Data Valid tWR(4)
CMOS SRAM
TIMING WAVEFORM WRITE CYCLE(2)
Controlled)
Address tAS(3) tWP(1) Data Data Valid tCW(2) tWR(4)
Data
NOTES (WRITE CYCLE)
High-Z
High-Z
write occurs during overlap write begins latest transition among going going low: write earliest transition among going high going high, measured from begining write write. measured from going write. measured from address valid beginning write. measured from write address change. applied case write ends going high.
DATA RETENTION WAVE FORM
controlled
3.0V tSDR Data Retention Mode tRDR
2.2V CSVCC 0.2V
Revision 1.01 October 2001
K6F4008V1D Family
SMALLER THIN SMALL OUTLINE PACKAGE TYPE (0813.4F)
0.20
+0.10 -0.05 0.008+0.004 -0.002
CMOS SRAM
Unit: millimeters(inches)
13.40±0.10 0.528±0.008 8.00 0.315 0.25 0.010
8.40 0.331
0.50 0.0197
1.00±0.10 0.039±0.004 1.20 0.047 11.80±0.10 0.465±0.004
+0.10 -0.05 0.006+0.004 -0.002
0.05 0.002
0.25 0.010
0.15
0~8°
0.45 ~0.75 0.018 ~0.030
0.50 0.020
1.10 0.004
Revision 1.01 October 2001

CMOS SRAM 512K Super Power Voltage Full CMOS Static Revision

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