CMOS SRAM 512K Super Power Voltage Full CMOS Static Revision

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CMOS SRAM 512K Super Power Voltage Full CMOS Static Revision

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K6F8016S6A Family
CMOS SRAM
512K Super Power Voltage Full CMOS Static
Revision History
Revision History
Initial draft Revise Change package type from FBGA TBGA Finalize Removed ICC, Revise Isb1 change 20µA 10µA Icc2 change :28mA 23mA 70ns product 25mA 20mA 85ns product Remove Index Mark" 48-TBGA package bottom side Changed 48-TBGA vertical dimension E1(typical) 0.55mm 0.58mm E2(typical) 0.35mm 0.32mm
Draft Date
August 2000 September 2000
Remark
Preliminary Preliminary
March 2001
Final
September 2001
Revise
attached datasheets provided SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve right change specifications products. SAMSUNG Electronics will answer yourquestions about device. have questions, please contact SAMSUNG branch offices.
Revision September 2001
K6F8016S6A Family
FEATURES
Process Technology: Full CMOS Organization: 512K Power Supply Voltage: 2.3~2.7V Data Retention Voltage: 1.5V(Min) Three state outputs Package Type: 48-TBGA-7.00x9.00
CMOS SRAM
GENERAL DESCRIPTION
K6F8016S6A families fabricated SAMSUNGs advanced full CMOS process technology. families support industrial operating temperature ranges have chip scale package user flexibility system design. families also support data retention voltage battery back-up operation with data retention current.
512K Super Power Voltage Full CMOS Static
DUCT FAMILY
Power Dissipation Product Family K6F8016S6A-F Operating Temperature Industrial(-40~85°C) Range 2.3~2.7V Speed Standby (ISB1, Typ.) 0.5µA2) Operating (ICC1, Max) Type 48-TBGA-7.00x9.00
701)/85ns
parameter measured with 30pF test load. Typical values measured VCC=2.5V, TA=25°C 100% tested.
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
gen. Precharge circuit.
I/O9
I/O1
Addresses
select
I/O10
I/O11
I/O2
I/O3
Memory array 1024 rows columns
I/O12
I/O4
Data cont Data cont Data cont Circuit Column select
I/O13
I/O5
I/O1~I/O8
I/O9~I/O16
I/O15
I/O14
I/O6
I/O7
I/O16
I/O8 Column Addresses
48-TBGA: View(Ball Down)
Control Logic
Name CS1, A0~A18
Function Chip Select Inputs Output Enable Input Write Enable Input Address Inputs
Name
Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8)
1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves right change products specifications without notice.
Revision September 2001
K6F8016S6A Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name K6F8016S6A-EF70 K6F8016S6A-EF85 Function 48-TBGA, 70ns, 2.5V 48-TBGA, 85ns, 2.5V
CMOS SRAM
FUNCTIONAL DESCRIPTION
I/O1~8 High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout High-Z
I/O9~16 High-Z High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z
Mode Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Standby Standby Active Active Active Active Active Active Active Active
means dont care. (Must high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage relative Voltage supply relative Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT TSTG Ratings -0.2 VCC+0.3V(Max. 3.0V) -0.2 Unit
Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. Functional operation should restricted recommended operating condition. Exposure absolute maximum rating conditions extended periods affect reliability.
Revision September 2001
K6F8016S6A Family
RECOMMENDED OPERATING CONDITIONS
Item Supply voltage Ground Input high voltage Input voltage Symbol -0.33)
CMOS SRAM
Vcc+0.3
Unit
Note: TA=-40 85°C, otherwise specified. Overshoot: VCC+1.0V case pulse width 20ns. Undershoot: -1.0V case pulse width 20ns. Overshoot undershoot sampled, 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Item Input capacitance Input/Output capacitance
Capacitance sampled, 100% tested.
Symbol
Test Condition VIN=0V VIO=0V
Unit
OPERATING CHARACTERISTIC
Item Input leakage current Output leakage current Symbol VIN=Vss CS1=VIH CS2=VIL OE=VIH WE=VIL LB=UB=VIH, VIO=Vss Cycle time=1µs, 100%duty, IIO=0mA, CS10.2V, LB0.2V or/and UB0.2V, CS2Vcc-0.2V, VIN0.2V VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL 0.5mA -0.5mA Other input =0~Vcc CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) 0VCS20.2V(CS2 controlled) 85ns 70ns Test Conditions Typ1) Unit
ICC1 Average operating current ICC2 Output voltage Output high voltage Standby Current(CMOS) ISB1
Typical values measured VCC=2.5V, TA=25°C 100% tested.
Revision September 2001
K6F8016S6A Family
OPERATING CONDITIONS
TEST CONDITIONS(Test Load Input/Output Reference)
Input pulse level: 2.2V Input rising falling time: Input output reference voltage: 1.1V Output load(see right): CL=100pF+1TTL CL=30pF+1TTL
CMOS SRAM
VTM3) R12)
CL1)
R22)
Including scope capacitance =3070, =3150 V=2.3V
CHARACTERISTICS(Vcc=2.3~2.7V, Industrial product: TA=-40 85°C)
Speed Bins Parameter List Symbol Read Cycle Time Address Access Time Chip Select Output Output Enable Valid Output Access Time Read Chip Select Low-Z Output Enable Low-Z Output Output Enable Low-Z Output Chip Disable High-Z Output Disable High-Z Output Output Disable High-Z Output Output Hold from Address Change Write Cycle Time Chip Select Write Address Set-up Time Address Valid Write Valid Write Write Write Pulse Width Write Recovery Time Write Output High-Z Data Write Time Overlap Data Hold from Write Time Write Output Low-Z tBLZ tOLZ tBHZ tOHZ tWHZ 70ns 85ns Units
DATA RETENTION CHARACTERISTICS
Item data retention Data retention current Data retention set-up time Recovery time Symbol tSDR tRDR Test Condition CS1Vcc-0.2V
Typ2)
Unit
Vcc=1.5V, CS1Vcc-0.2V data retention waveform
CS1Vcc-0.2V, Vcc-0.2V(CS1 controlled) 0CS20.2V(CS2 controlled) Typical value measured TA=25°C 100% tested.
Revision September 2001
K6F8016S6A Family
TIMING DIAGRAMS
CMOS SRAM
TIMING WAVEFORM READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, or/and LB=VIL)
Address Data Previous Data Valid Data Valid
TIMING WAVEFORM READ CYCLE(2) (WE=VIH)
Address
tBHZ tOLZ tBLZ Data Valid tOHZ
Data
High-Z
NOTES (READ CYCLE) tOHZ defined time which outputs achieve open circuit conditions referenced output voltage levels. given temperature voltage condition, tHZ(Max.) less than tLZ(Min.) both given device from device device interconnection.
Revision September 2001
K6F8016S6A Family
TIMING WAVEFORM WRITE CYCLE(1)
Controlled)
CMOS SRAM
Address tCW(2) tWR(4)
tWP(1) tAS(3) Data High-Z tWHZ Data Data Undefined Data Valid High-Z
TIMING WAVEFORM WRITE CYCLE(2)
(CS1 Controlled)
Address tAS(3) tWP(1) Data Data Valid tCW(2) tWR(4)
Data
High-Z
High-Z
Revision September 2001
K6F8016S6A Family
TIMING WAVEFORM WRITE CYCLE(3) (UB, Controlled)
Address tCW(2) tAS(3) tWP(1) Data Data Valid tWR(4)
CMOS SRAM
Data
NOTES (WRITE CYCLE)
High-Z
High-Z
write occurs during overlap(tWP) write begins when goes goes with asserting single byte operation simultaneously asserting double byte operation. write ends earliest transition when goes high goes high. measured from beginning write write. measured from going write. measured from address valid beginning write. measured from write address change. applied case write ends going high.
DATA RETENTION WAVE FORM
controlled
2.3V tSDR Data Retention Mode tRDR
2.0V CS1VCC 0.2V
controlled
2.3V tSDR
Data Retention Mode
tRDR
0.4V CS20.2V
Revision September 2001
K6F8016S6A Family
PACKAGE DIMENSION
TAPE BALL GRID ARRAY(0.75mm ball pitch)
View Bottom View
CMOS SRAM
Unit: millimeters
C1/2 Detail 0.32/Typ. 0.58/Typ. Notes. Ball counts: 48(8 column) Ball pitch: (x,y)=(0.75 0.75)(typ.) tolerence +/-0.050 unless otherwise specified. Typ: Typical coplanarity: 0.08(Max)
Side View
6.90 8.90 0.40 0.80 0.27
0.75 7.00 3.75 9.00 5.25 0.45 0.90 0.58 0.32
7.10 9.10 0.50 1.00 0.37 0.08
Revision September 2001

CMOS SRAM 512K Super Power Voltage Full CMOS Static Revision

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