N-CHANNEL 250V 0.23 TO-220 MESH OVERLAYMOSFET TYPE STP16NS25

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-CHANNEL 250V 0.23 TO-220 MESH OVERLAYMOSFET TYPE STP16NS25

Datasheet Thumbnail

Top Searches for this datasheet

STP16NS25
N-CHANNEL 250V 0.23 TO-220 MESH OVERLAYMOSFET
TYPE STP16NS25
VDSS
RDS(on) 0.28
TYPICAL RDS(on) 0.23 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performance. patented STrip layout coupled with Company's proprietary edge termination structure, makes suitable coverters lighting applications.
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS TELECOM, INDUSTRIAL, LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value
16A, di/dt300 A/µs, V(BR)DSS, TjTjMAX
Unit W/°C V/ns
width limited safe operating area
November 2000
STP16NS25
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 62.5 °C/W °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-body Leakage Current (VDS Test Conditions Rating Rating, Min. ±100 Typ. Max. Unit
Symbol VGS(th) DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test Conditions VGS, 250µA 10V, ID(on) RDS(on)max, Min. Typ. 0.23 Max. 0.28 Unit
DYNAMIC
Symbol Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 1270 Max. Unit
STP16NS25
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (see test circuit, Figure 200V, Min. Typ. 14.5 22.3 Max. Unit
SWITCHING
Symbol td(Voff) tr(Voff) Parameter Turn-off- Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Condit ions 125V, 4.7, (see test circuit, Figure Vclamp 200V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs 30V, 150°C (see test circuit, Figure 11.4 Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area
Thermal Impedance
STP16NS25
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STP16NS25
Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STP16NS25
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP16NS25
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
Dia.
P011C
STP16NS25
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 2000 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com

N-CHANNEL 250V 0.23 TO-220 MESH OVERLAYMOSFET TYPE STP16NS25

Top Searches for this datasheet

Other recent searches