Super Power Voltage Full CMOS Static CMOS SRAM Revision Hist

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Super Power Voltage Full CMOS Static CMOS SRAM Revision Hist

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K6F1616R6M Family
Super Power Voltage Full CMOS Static
CMOS SRAM
Revision History
Revision History
Initial draft Revise Change package type from FBGA TBGA Remove ICC, Improve ICC2 from 20mA 85ns product Improve ICC2 from 25mA 70ns product Improve ISB1 from 15uA Improve from Finalize Changed 48-TBGA vertical dimension E1(typical) 0.55mm 0.58mm E2(typical) 0.35mm 0.32mm Errata correction test condition(VCC) change 1.5V 1.2V
Draft Date
August 2000 June 2001
Remark
Preliminary Preliminary
September 2001
Final
attached datasheets provided SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve right change specifications products. SAMSUNG Electronics will answer yourquestions about device. have questions, please contact SAMSUNG branch offices.
Revision September 2001
K6F1616R6M Family
FEATURES
Process Technology: Full CMOS Organization: Power Supply Voltage: 1.65~2.2V Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-9.00x12.00
CMOS SRAM
GENERAL DESCRIPTION
K6F1616R6M families fabricated SAMSUNGs advanced full CMOS process technology. families support industrial operating temperature ranges have chip scale package user flexibility system design. families also support data retention voltage battery back-up operation with data retention current.
Super Power Voltage Full CMOS Static
PRODUCT FAMILY
Power Dissipation Product Family K6F1616R6M-F Operating Temperature Industrial(-40~85°C) Range 1.65~2.2V Speed 701)/85ns Standby (ISB1, Typ.) 1µA2) Operating (ICC1, Max) Type 48-TBGA-9.00x12.00
parameter measured with 30pF test load. Typical values measured VCC=2.0V, TA=25°C 100% tested.
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
gen. Precharge circuit.
I/O9
I/O1
Addresses
I/O10
I/O11
I/O2
I/O3
select
Memory Cell Array
I/O12
I/O4
Data cont Data cont Data cont Circuit Column select
I/O13
I/O5
I/O1~I/O8
I/O9~I/O16
I/O15
I/O14
I/O6
I/O7
I/O16
I/O8 Column Addresses
48-TBGA: View (Ball Down)
Control Logic
Name CS1, A0~A19
Function Chip Select Inputs Output Enable Input Write Enable Input Address Inputs
Name
Function Power Ground Upper Byte(I/O 9~16) Lower Byte(I/O 1~8)
1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves right change products specifications without notice.
Revision September 2001
K6F1616R6M Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name K6F1616R6M-EF70 K6F1616R6M-EF85 Function
CMOS SRAM
48-TBGA, 70ns, 1.8/2.0V 48-TBGA, 85ns, 1.8/2.0V
FUNCTIONAL DESCRIPTION
I/O1~8 High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout High-Z
I/O9~16 High-Z High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z
Mode Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Standby Standby Active Active Active Active Active Active Active Active
means dont care. (Must high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage relative Voltage supply relative Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT TSTG Ratings -0.2 VCC+0.3V(Max. 2.5V) -0.2 Unit
Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. Functional operation should restricted recommended operating condition. Exposure absolute maximum rating conditions extended periods affect reliability.
Revision September 2001
K6F1616R6M Family
RECOMMENDED OPERATING CONDITIONS
Item Supply voltage Ground Input high voltage Input voltage Symbol 1.65 -0.33) 1.8/2.0
CMOS SRAM
Vcc+0.3
Unit
Note: TA=-40 85°C, otherwise specified Overshoot: VCC+1.0V case pulse width 20ns. Undershoot: -1.0V case pulse width 20ns. Overshoot undershoot sampled, 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Item Input capacitance Input/Output capacitance
Capacitance sampled, 100% tested
Symbol
Test Condition VIN=0V VIO=0V
Unit
OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current Symbol VIN=Vss CS1=VIH CS2=VIL OE=VIH WE=VIL LB=UB=VIH, VIO=Vss Cycle time=1µs, 100%duty, IIO=0mA, CS10.2V, LB0.2V or/and UB0.2V, CS2Vcc-0.2V, VIN0.2V VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL 0.1mA -0.1mA Other input =0~Vcc CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) 0VCS20.2V(CS2 controlled) 85ns 70ns Test Conditions Typ1) Unit
ICC1 Average operating current ICC2 Output voltage Output high voltage Standby Current(CMOS) ISB1
Typical values measured VCC=2.0V, TA=25°C 100% tested.
Revision September 2001
K6F1616R6M Family
OPERATING CONDITIONS
TEST CONDITIONS(Test Load Input/Output Reference)
Input pulse level: Vcc-0.2V Input rising falling time: Input output reference voltage: 0.9V Output load(see right): CL=100pF+1TTL CL=30pF+1TTL
CMOS SRAM
VTM3) R12)
CL1)
R22)
Including scope capacitance =3070, =3150 V=1.8V
CHARACTERISTICS (Vcc=1.65~2.2V, TA=-40 85°C)
Speed Bins Parameter List Symbol Read cycle time Address access time Chip select output Output enable valid output valid data output Read Chip select low-Z output Output enable low-Z output enable low-Z output Output hold from address change Chip disable high-Z output disable high-Z output disable high-Z output Write cycle time Chip select write Address set-up time Address valid write Write pulse width Write Write recovery time Write output high-Z Data write time overlap Data hold from write time write output low-Z valid write tCO1, tCO2 tLZ1, tLZ2 tOLZ tBLZ tHZ1, tHZ2 tOHZ tBHZ tCW1, tCW2 tWHZ 70ns 85ns Units
DATA RETENTION CHARACTERISTICS
Item data retention Data retention current Data retention set-up time Recovery time Symbol tSDR tRDR Test Condition CS1Vcc-0.2V Vcc=1.2V, CS1Vcc-0.2V VIN0V Typ2) Unit
data retention waveform
CS1Vcc-0.2V, Vcc-0.2V(CS1 controlled) 0CS20.2V(CS2 controlled) Typical values measured TA=25°C 100% tested.
Revision September 2001
K6F1616R6M Family
TIMING DIAGRAMS
CMOS SRAM
TIMING WAVEFORM READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, or/and LB=VIL)
Address Data Previous Data Valid Data Valid
TIMING WAVEFORM READ CYCLE(2) (WE=VIH)
Address
tBHZ tOLZ tBLZ Data Valid tOHZ
Data
High-Z
NOTES (READ CYCLE) tOHZ defined time which outputs achieve open circuit conditions referenced output voltage levels. given temperature voltage condition, tHZ(Max.) less than tLZ(Min.) both given device from device device interconnection.
Revision September 2001
K6F1616R6M Family
TIMING WAVEFORM WRITE CYCLE(1)
Controlled)
CMOS SRAM
Address tCW(2) tWR(4)
tWP(1) tAS(3) Data High-Z tWHZ Data Data Undefined Data Valid High-Z
TIMING WAVEFORM WRITE CYCLE(2)
(CS1 Controlled)
Address tAS(3) tWP(1) Data Data Valid tCW(2) tWR(4)
Data
High-Z
High-Z
Revision September 2001
K6F1616R6M Family
TIMING WAVEFORM WRITE CYCLE(3) (UB, Controlled)
Address tCW(2) tAS(3) tWP(1) Data Data Valid tWR(4)
CMOS SRAM
Data
NOTES (WRITE CYCLE)
High-Z
High-Z
write occurs during overlap(tWP) write begins when goes goes with asserting single byte operation simultaneously asserting double byte operation. write ends earliest transition when goes high goes high. measured from beginning write write. measured from going write. measured from address valid beginning write. measured from write address change. applied case write ends with going high.
DATA RETENTION WAVE FORM
controlled
1.65V tSDR Data Retention Mode tRDR
1.4V CS1VCC 0.2V
controlled
1.65V tSDR
Data Retention Mode
tRDR
0.4V CS20.2V
Revision September 2001
K6F1616R6M Family
PACKAGE DIMENSION
BALL TAPE BALL GRID ARRAY(0.75mm ball pitch)
View Bottom View
CMOS SRAM
Unit: millimeters
C1/2 Detail 0.32/Typ. 0.58/Typ. Notes. Bump counts: 48(8 column) Bump pitch: (x,y)=(0.75 0.75)(typ.) tolerence ±0.050 unless otherwise specified. Typ: Typical coplanarity: 0.08(Max)
Side View
8.90 11.90 0.40 0.80 0.27
0.75 9.00 3.75 12.00 5.25 0.45 0.90 0.58 0.32
9.10 12.10 0.50 1.00 0.37 0.08
Revision September 2001

Super Power Voltage Full CMOS Static CMOS SRAM Revision Hist

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