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N-CHANNEL 600V 3.2A DPAK IPAK PowerMeshII MOSFET TYPE STD3NC50
Top Searches for this datasheetSTD3NC50 N-CHANNEL 600V 3.2A DPAK IPAK PowerMeshII MOSFET TYPE STD3NC50 VDSS RDS(on) TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DPAK IPAK DESCRIPTION PowerMESHII evolution first generation MESH OVERLAYTM. layout refinements introduced greatly improve Ron*area figure merit while keeping device leading edge what concerns swithing speed, gate charge ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVERS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDGR PTOT dv/dt(1) Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 12.8 0.48 Unit W/°C V/ns width limited safe operating area (1)I 3.2A, di/dt 100A/µs, V(BR)DSS, TJMAX. October 2000 STD3NC50 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose °C/W °C/W °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED) Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. ±100 Typ. Max. Unit Symbol VGS(th) DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test Conditions VGS, 250µA 10V, ID(on) RDS(on)max, Min. Typ. Max. Unit DYNAMIC Symbol Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. Max. Unit STD3NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 250V, (see test circuit, Figure 400V, Min. Typ. 12.5 Max. Unit SWITCHING Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 400V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit SOURCE DRAIN DIODE Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 100V, 150°C (see test circuit, Figure 1.64 Test Conditions Min. Typ. Max. 12.8 Unit Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Safe Operating Area Thermal Impedance STD3NC50 Output Characteristics Tranfer Characteristics Tranconductance Static Drain-Source Resistance Gate Charge Gate-source Voltage Capacitance Variations STD3NC50 Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature Source-drain Diode Forward Characteristics STD3NC50 Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform Fig. Switching Times Test Circuits Resistive Load Fig. Gate Charge test Circuit Fig. Test Circuit Inductive Load Switching Diode Recovery Times STD3NC50 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 0068771-E STD3NC50 TO-252 (DPAK) MECHANICAL DATA DIM. MIN. 0.60 TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1.00 inch MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.024 TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.039 P032P_B STD3NC50 Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 2000 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com Other recent searchesXYMY101W12V - XYMY101W12V XYMY101W12V Datasheet TVP5010 - TVP5010 TVP5010 Datasheet SN65HVDA195-Q1 - SN65HVDA195-Q1 SN65HVDA195-Q1 Datasheet EGP30A - EGP30A EGP30A Datasheet EGP30G - EGP30G EGP30G Datasheet 2SD1753 - 2SD1753 2SD1753 Datasheet 2N4907 - 2N4907 2N4907 Datasheet
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