200mA Designed mounting small surface. Extremely thin package. le
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ASB0240
200mA
Designed mounting small surface. Extremely thin package. leakage current (IR=0.1uA typ. @VR=10V). Majority carrier conduction. Lead-free device
0.010(0.25)Typ. 0.033(0.85) 0.028(0.70)
(Preliminary) General Description
0603(1608)
0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80)
0.012(0.30)Typ.
0.014(0.35)Typ. Dimensions inches (millimeter)
1005(2512)
0.102(2.60) 0.095(2.40)
Mechanical Data
Case :0603(1608) 1005(2512) standard package, molded plastic. Terminals Gold plated, solderable MIL-STD-750, method 2026. Polarity Indicated cathode band. Mounting position Any. Weight BD:0.003gram (approximately) BF:0.006gram (approximately)
0.014(0.35)Typ. 0.014(0.35)Typ.
0.051(1.30) 0.043(1.10)
0.035(0.90) 0.027(0.70)
0.12(0.30)Typ.
Dimensions inches (millimeter)
Ordering information
Feature Schottky Barrier
Package type BD-0603 BF-1005
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product. Rev. 2003
ASB0240
Schottky Barrier Diode Maximum Rating unless otherwise noted)
Symbol VRRM IFSM TSTG Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current, surge peak Power Dissipation Storage temperature Junction temperature 0603 1005 0603 1005 8.3ms single half sine-wave superimposed rate load (JEDEC method) Conditions 2000 3000 +125 +125 Unit
(Preliminary)
Electrical Characteristics unless otherwise noted)
Symbol Parameter Forward voltage Reverse current Capacitance between terminals Conditions IF=200mADC VR=10V F=1MHz, reverse voltage Min. Typ. 0.45 Max. 0.55 Unit
Anachip Corp. www.anachip.com.tw
Rev.
2003
ASB0240
Schottky Barrier Diode Rating Characteristic Curves (Preliminary)
Ambient temperature
Marking Information
ASB0240
Anachip Corp. www.anachip.com.tw
Rev.
2003
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