N-Channel P-Channel Silicon MOSFETs CPH5606 Preliminary Feat

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N-Channel P-Channel Silicon MOSFETs CPH5606 Preliminary Feat

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Ordering number:ENN*6451
N-Channel P-Channel Silicon MOSFETs
CPH5606
Preliminary Features
CPH5606 incorporates N-channel MOSFET P-channel MOSFET that feature resistance high-speed switching, thereby enabling high-density mounting. drive.
Package Dimensions
unit:mm 2168
[CPH5606]
0.95
0.05
Specifications
Absolute Maximum Ratings 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Conditions
Drain1 Drain2 Gate2 Source Gate1 SANYO CPH5
Ratings N-channel P-channel +150
0.15
Unit
Mounted ceramic board 1unit
Electrical Characteristics 25°C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=700mA ID=700mA, VGS=10V ID=400mA, VGS=4V Symbol Conditions Ratings Unit
Marking
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) No.6451-1/6
CPH5606
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) td(off) V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz specified Test Circuit specified Test Circuit specified Test Circuit specified Test Circuit VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0 ID=-1mA, VGS=0 VDS=-30V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-500mA ID=-500mA, VGS=-10V ID=-300mA, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit specified Test Circuit specified Test Circuit specified Test Circuit VDS=-10V, VGS=-10V, ID=-1A VDS=-10V, VGS=-10V, ID=-1A VDS=-10V, VGS=-10V, ID=-1A IS=-1A, VGS=0 -1.0 -0.9 -1.5 -2.5 Conditions Ratings 0.92 Unit
Electrical Connection
view
Switching Time Test Circuit [N-channel]
VDD=15V PW=10µs D.C.1% ID=700mA RL=21.4
Switching Time Test Circuit [P-channel]
VDD=-15V -10V PW=10µs D.C.1% ID=-500mA RL=30
VOUT
VOUT
No.6451-2/6
CPH5606
[Nch]
-1.6
[Pch]
Drain Current,
-1.4
Drain Current,
3.5V
-1.2 -1.0 -0.8
-4.0V
3.0V
-3.5V
-0.6 -0.4 -0.2
-3.0V
VGS=-2.5V
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
VGS=2.5V
Drain-to-Source Voltage,
IT01096
Drain-to-Source Voltage,
-3.0
IT01085
VDS=10V
[Nch]
[Pch]
VDS=-10V
-2.5
Drain Current,
Drain Current,
-1.5
-1.0
-0.5
-2.0
IT01086
Gate-to-Source Voltage,
IT01097
Gate-to-Source Voltage,
1000
RDS(on)
[Nch] Ta=25°C
Static Drain-to-Source On-State Resistance, (on)
RDS(on)
[Pch] Ta=25°C
Static Drain-to-Source On-State Resistance, (on)
ID=700mA 400mA
ID=-500mA -300mA
Gate-to-Source Voltage,
IT01098
Gate-to-Source Voltage,
1200 1100
IT01087
RDS(on)
[Nch]
Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on)
1000
=10V
-500
Ambient Temperature,
IT01099
Ambient Temperature,
IT01088
No.6451-3/6
CPH5606
[Nch]
Forward Transfer Admittance,
Forward Transfer Admittance,
VDS=10V
0.01 -0.01
[Pch] VDS=-10V
0.01
Drain Current,
0.01
IT01100
-0.1
-1.0
Drain Current,
-1.0 -0.1 -0.01
IT01089
[Nch]
[Pch]
Forward Current,
25°C
Forward Current,
25°C
-0.6
Ta=7
IT01101
-0.2
-0.4
Ta=75
-25°C
-0.8
-25°
-1.0
-1.2
-1.4
Diode Forward Voltage,
Diode Forward Voltage,
IT01090
Time
VDD=15V VGS=10V
[Nch]
Time
[Pch] VDD=-15V VGS=-10V
Switching Time, Time
Switching Time, Time
td(off) td(on)
td(off)
td(on)
-0.1 -1.0 IT01091
Drain Current,
1000
IT01102
Drain Current,
1000
Ciss, Coss, Crss
[Nch] f=1MHz
Ciss, Coss, Crss
[Pch] f=1MHz
Ciss, Coss, Crss
Ciss, Coss, Crss
Ciss
Coss
Ciss Coss
Crss
Crss
IT01103
IT01092
Drain-to-Source Voltage,
Drain-to-Source Voltage,
No.6451-4/6
CPH5606
VDS=10V ID=1.4A
[Nch]
VDS=-10V ID=-1A
[Pch]
Gate-to-Source Voltage,
Gate-to-Source Voltage,
Total Gate Charge,
IT01104
Total Gate Charge,
IT01093
IDP=5.6A ID=1.4A
[Nch]
IDP=-4A
[Pch]
100µs
100µs
Drain Current,
Drain Current,
-1.0 -0.1
ID=-1A
Operation this area limited RDS(on).
Ta=25°C Single pulse unit
Operation this area limited RDS(on).
Ta=25°C Single pulse unit
0.01
Mounted ceramic board
Drain-to-Source Voltage,
IT01105
-0.01 -0.1
Mounted ceramic board
-1.0
Drain-to-Source Voltage,
-100 IT01094
[Nch, Common]
Allowable Power Dissipation,
Ambient Temperature,
IT01095
No.6451-5/6
CPH5606
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information March, 2000. Specifications information herein subject change without notice.
No.6451-6/6

N-Channel P-Channel Silicon MOSFETs CPH5606 Preliminary Feat

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