High speed switching on-resistance secondary breakdown driving power H

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High speed switching on-resistance secondary breakdown driving power H

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2SK1553-01MR
High speed switching on-resistance secondary breakdown driving power High voltage
FUJI POWER MOSFET
SERIES
Outline Drawings
TO-220F15
Applications
Switching regulators DC-DC converters General purpose power amplifier
2.54
Source
JEDEC EIAJ
SC-67
Maximum ratings characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating storage temperature range Symbol ID(puls] Tstg Rating +150 +150 Unit
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) Ciss Coss Crss td(on) td(off) Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=650V VGS=0V VGS=±20V VDS=0V ID=2.5A VGS=10V ID=2.5A VDS=25V =25V VGS=0V f=1MHz VCC=300V RG=25 ID=5A VGS=10V IF=2xIDR VGS=0V Tch=25°C IF=IDR di/dt=100A/µs Tch=25°C
Min.
Tch=25°C Tch=125°C
Typ.
Max.
1300 1.65
Units
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel ambient channel case
Min.
Typ.
Max.
62.5 3.125
Units
°C/W °C/W

High speed switching on-resistance secondary breakdown driving power H

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