QUALITY SEMICONDUCTOR, INC. High-Performance CMOS Channel 4PST Sw

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QUALITY SEMICONDUCTOR, INC. High-Performance CMOS Channel 4PST Sw

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QS4A105Q PRELIMINARY
QUALITY SEMICONDUCTOR, INC.
High-Performance CMOS Channel 4PST Switch
GENERAL DESCRIPTION
QS4A105
on-resistance: rDS(on) Wide bandwidth: 1.3GHz (-3dB point) Crosstalk: -100dB 50KHz, -70dB 5MHz, -50dB 30MHz Off-isolation: -90dB 50KHz, -60dB 5MHz, -55dB 30MHz, Single supply Bidirectional signal flow compatible control inputs Ultra-low quiescent current: Switch turn time 6.5ns
QS4A105Q high-performance CMOS Two-Channel 4PST switch with 3-state outputs. on-resistance QS4A105Q allows inputs connected outputs with insertion loss high bandwidth. QS4A105Q with 1.3GHz bandwidth, makes ideal high-performance video signal switching, audio signal switching, telecomm routing applications. power dissipation makes this device ideal battery operated remote instrumentation applications. QS4A105Q offered QSOP package which several advantages over conventional packages such PDIP SOIC including: Reduced signal delays denser component packaging circuit boards Reduced system noise less inductance
APPLICATIONS
High-speed video signal switching/routing HDTV-quality video signal routing Audio signal switching/routing Data acquisition systems Telecomm routing Token Ring transceivers High-speed networking
Figure Functional Block Diagram
CONTROL LOGIC
MDSA-00002-01 1998
QUALITY SEMICONDUCTOR, INC.
QS4A105Q PRELMINARY Figure Configuration
(All Pins View) QSOP
Table Definitions
Name Description Enable Port Port Port Port
Table Function Table
I/Os Disconnected Disconnected I/Os Disconnected Disconnected
Table Absolute Maximum Ratings
Supply Voltage Ground -0.5V +7.0V Switch Voltage +7.0V Analog Input Voltage +7.0V Input Voltage +7.0V Input Voltage (for pulse width 20ns) -3.0V Output Current Max. Sink Current/Pin 120mA Maximum Power Dissipation watts TSTG Storage Temperature -65° +150°C
Note: ABSOLUTE MAXIMUM RATINGS those conditions beyond which damage device occur. Exposure these conditions beyond those indicated adversely affect device reliability. Functional operation under absolute maximum rating conditions implied.
Table Power Supply Characteristics
Symbol Parameter Supply Current Test Conditions Max., Unit
QUALITY SEMICONDUCTOR, INC.
MDSA-00002-01 1998
QS4A105Q PRELIMINARY Table Electrical Characteristics Over Operating Range
Commercial: 70°C, 5.0V Symbol rDS(on) Parameter Analog Signal Range(2) Drain-source On-resistance(2,3) rDS(on) Matching Between Channels(2,3,4) Min., 0.0V, 30mA Min., 1.5V, rDS(on) Min., 0.0V, 30mA Min., 1.5V, 15mA (OFF) (ON) Channel Leakage Current Channel Leakage Current Input HIGH Voltage Input Voltage VCC, Each Channel Turned Sequentially Guaranteed Logic HIGH Control Pins Guaranteed Logic Control Pins 100pF (See Figure 100pF (See Figure 100pF p-p, p-p, 5.5MHz p-p, 5.5MHz VCC, VOUT GND, VOUT 1000pF Test Conditions Typ(1) VCC- Unit
Analog Switch
Digital Control
Dynamic Characteristics tON(E) Enable Turn-on Time
tOFF(E)
f3dB
Enable Turn-off Time Group Delay(2,5) Isolation Bandwidth
XTALK C(OFF) C(ON)
Crosstalk Capacitance Capacitance Charge Injection
Notes: Typical values indicate 5.0V 25°C. Guaranteed design, subject production test. Measured voltage drop between pins indicated current through switch. On-resistance determined lower voltages (A,C B,D) pins. rDS(on) compares on-resistance specified Values. switch contributes group delay other than delay on-resistance switch load capacitance. Group delay switch, when used system, determined driving circuit driving side switch interaction with load driven side.
MDSA-00002-01 1998
QUALITY SEMICONDUCTOR, INC.
QS4A105Q PRELMINARY TYPICAL CHARACTERISTICS Figure Off-isolation Crosstalk Frequency
-180 -150 -120 Crosstalk (dB) Off-isolation 100K 100M Frequency (Hz) Off-isolation 100M 200M 300M 400M 500M 600M 700M Frequency (Hz) (dB)
Figure Off-isolation Crosstalk Frequency
Crosstalk
Note: Crosstalk VO/VS Off-isolation VO/VS
Note: Crosstalk VO/VS Off-isolation VO/VS
Figure Isolation Crosstalk Frequency
-160 -140 -120 Crosstalk (dB) -100 Off-isolation
Figure Insertion Loss Frequency
(dB)
100K 100M Frequency (Hz)
Frequency (Hz)
Note: Crosstalk VO/VS Off-isolation VO/VS
Note: Insertion Loss VO/VS
QUALITY SEMICONDUCTOR, INC.
MDSA-00002-01 1998
QS4A105Q PRELIMINARY TYPICAL CHARACTERISTICS (continued) Figure Insertion Loss Frequency
DS(On)-Drain Source On-resistance
Figure On-resistance
4.75V
(dB)
400M 500M 600M 700M 800M 900M Frequency (Hz)
Note: Insertion Loss VO/VS
CONTROL INPUT
(Volts)
TEST CIRCUITS Figure Switching Time
A1-A3 C1-C3
3.0V 1.5V
OUTPUT tOFF(E)
0.3V
QS4A105CONTROL INPUT
3.0V 1.5V ON(E)
OUTPUT
0.3V
MDSA-00002-01 1998
QUALITY SEMICONDUCTOR, INC.
QS4A105Q PRELMINARY TEST CIRCUITS (continued) Figure Insertion Loss
Figure Crosstalk
QS4A1055V
QS4A1055V
Note: Insertion Loss VO/VS unused pins grounded.
Note: Crosstalk VO/VS unused pins grounded.
Figure Off-isolation
QS4A105
Note: Off-isolation VO/VS unused pins grounded.
QUALITY SEMICONDUCTOR, INC.
MDSA-00002-01 1998

QUALITY SEMICONDUCTOR, INC. High-Performance CMOS Channel 4PST Sw

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