Triple Diffused Planar Silicon Transistor 2SD1159 Horizontal

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Triple Diffused Planar Silicon Transistor 2SD1159 Horizontal

Datasheet Thumbnail

Top Searches for this datasheet

Ordering number:EN837E
Triple Diffused Planar Silicon Transistor
2SD1159
Horizontal Deflection Output, High-Current Switching Applications
Features
Capable efficient drive with small internal loss excellent
Package Dimensions
unit:mm 2010C
[2SD1159]
10.2
18.0
14.0
15.1
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg
Tc=25°C
2.55
2.55
Base Collector Emitter JEDEC TO-220AB EIAJ SC-46
Conditions
Ratings +150
Unit
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A VCE=5V, IC=1A IC=4A, IB=0.4A IC=4A, IB=0.4A Conditions Ratings Unit
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/91096TS (KOTO) 8-3991/5257KI/O141KI, No.837-1/3
2SD1159
Continued from preceding page.
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Fall Time Symbol V(BR)CBO IC=5mA, IE=0 V(BR)CEO IC=5mA, RBE= V(BR)EBO IE=5mA, IC=0 specified Test Circuit. Conditions Ratings Unit
Specified Test Circuit
No.837-2/3
2SD1159
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information February, 1999. Specifications information herein subject change without notice.
No.837-3/3

Triple Diffused Planar Silicon Transistor 2SD1159 Horizontal

Top Searches for this datasheet

Other recent searches