PNP/NPN Epitaxial Planar Silicon Transistors 2SA1474/2SC3780

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PNP/NPN Epitaxial Planar Silicon Transistors 2SA1474/2SC3780

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Ordering number:EN2526
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1474/2SC3780
Ultrahigh-Definition Display Video Output Applications
Applications
Video Output. Color chroma output. Wide-band amp.
Package Dimensions
unit:mm 2010C
[2SA1474/2SC3780]
Features
High typ=800MHz). Small reverse transfer capacitance excellent high frequency characteristic Cre=3.0pF (NPN), 4.7pF (PNP). Complementary types. Adoption FBET process.
2SA1474
JEDEC TO-220AB EIAJ SC-46
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Conditions
Emitter Collector Base
Ratings (-)80 (-)60 (-)4 (-)800 (-)1
Unit
Tc=50°C
Tstg
+150
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VCB=(-)60V, IE=0 VEB=(-)2V, IC=0 VCE=(-)10V, IC=(-)50mA VCE=(-)10V, IC=(-)400mA VCE=(-)10V, IC=(-)100mA IC=(-)100mA, IB=(-)10mA IC=(-)100mA, IB=(-)10MA (-)80 (-)60 (-)4 (5.3) VCB=(-)30V, f=1MHz (4.7) (-0.8) (-)1.0 V(BR)CBO IC=(-)10µA, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)100µA, IC=0 VCB=(-)30V, f=1MHz Conditions Ratings (-)0.1 (-)1.0 320* Unit
2SA1474/2SC3780 classified 50mA follows
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4077TA, No.2526-1/4
2SA1474/2SC3780
No.2526-2/4
2SA1474/2SC3780
No.2526-3/4
2SA1474/2SC3780
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information July, 1998. Specifications information herein subject change without notice.
No.2526-4/4

PNP/NPN Epitaxial Planar Silicon Transistors 2SA1474/2SC3780

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