Integrated Design optimizes Performance High Rates 40Gb/s Equivalent I

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Integrated Design optimizes Performance High Rates 40Gb/s Equivalent I

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PIN/Preamplifier Receiver
Integrated Design optimizes Performance High Rates 40Gb/s Equivalent Input Noise Current: 30pA/ (max.) Optical Return Loss (ORL): 27dB (min.) Package: V-Connector Electrical Output Interface Simplifies Receiver Circuit Design
FRM5L442BZ
APPLICATIONS
This with HEMT preamplifier intended function optical receiver SONET, SDH, DWDM other optical fiber systems operating 40Gb/s. typical transimpedance (Zt) value optimizes total bandwidth 40Gb/s applications.
DESCRIPTION
FRM5L442BZ incorporates high bandwidth InGaAs photo diode, HEMT amplifier hermetically sealed, single-ended, V-Connector type package. processed with modern MOVPE techniques resulting reliable performance over wide range operating conditions. lens coupling system single mode fiber assembled using welding. ABSOLUTE MAXIMUM RATINGS (Tc=25°C, Unless otherwise specified)
Parameter Storage Temperature Operating Case Temperature Bias Voltage Bias Current Optical Power Symbol Tstg Pmax VR<5V VR<5V Condition Limits Max. Min. Unit
Edition March 2003
PIN/Preamplifier Receiver
FRM5L442BZ
OPTICAL ELECTRICAL CHARACTERISTICS (Tc=0~70°C, =1550mn, VR=2.85V 3.15V, Vss=-1.9V -2.1V, Vdd=6.65V 7.35V, unless otherwise specififed)
Parameter Responsivity Responsivity Variation Polarization Change Dark Current Symbol Condition =1550nm, Tc=25°C =1550 1610nm, Tc=0 70°C PDL=10*Log(Rmax/Rmin) Limit Min. Typ. Max. 30GHz 40GHz Optical Return Loss Power Supply Current Output Impedance 1550nm mVpp Unit
Tc=25°C, Reference=average from 1GHz 10GHz Tc=0°C 70°C, Reference=average from 1GHz 10GHz Tc=25°C,100MHz 32GHz Tc=0°C 70°C, 100MHz 27GHz 1GHz 20GHz, smoothing 1GHz 40GHz, smoothing
Bandwidth (3dB)
Gain Flatness
Group Delay Deviation Lower Frequency Cut-off Output Voltage Swing Linear Operation Transimpedance Gain Equivalent Input Noise Current Density Output Return Loss
Vout
Reference=100MHz, down compression Average from 2GHz 10GHz Average from 100MHz 19GHz 30GHz
PIN/Preamplifier Receiver
Notes
FRM5L442BZ
PIN/Preamplifier Receiver
"BZ" PACKAGE
(5.53) 4xP1.0=4.0±0.15 10xW0.40±0.10 T0.125±0.03 4-M2.0 MIN. 23.53±0.15 9.64±0.2 19.05±0.15 12.7±0.15 (14.7)
FRM5L442BZ
UNIT:
further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Jose, 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House Norreys Drive Maidenhead, Berkshire United Kingdom TEL: 1628 504800 FAX: 1628 504888
FUJITSU QUANTUM DEVICES SINGAPORE LTD. Hong Kong Branch
1101, Ocean Centre, Canton Tsim Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269
Fujitsu Limited reserves right change products specifications without notice. information does convey license under rights Fujitsu Limited others.
2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed U.S.A. FCSI0502M200
MIN.
MAX.
Connector
4-4.5±0.15
4-4.2±0.15 (2.1)
6.65±0.2 10.85±0.15
15.05±0.15 V-Connector V102F (Anritsu)
30.0 MAX.
DESIGNATIONS
4.82±0.2 (Center Connector)
4.644±0.25 (Center optical feedthrough)
(6.55)
4.76±0.2
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which hazardous human body environment. safety, observe following procedures:
this product into mouth. alter form this product into gas, powder, liquid through burning, crushing, chemical processing these by-products dangerous human body inhaled, ingested, swallowed. Observe government laws company regulations when discarding this product. This product must discarded accordance with methods specified applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582

Integrated Design optimizes Performance High Rates 40Gb/s Equivalent I

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