SRAM, R42HD Technology, Qualification CY7C1031/CY7C1032 Synchrono
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Cypress Semiconductor Metal Qualification Report
SRAM, R42HD Technology, Qualification
CY7C1031/CY7C1032 Synchronous Cache
CYPRESS TECHNICAL CONTACT QUALIFICATION DATA:
Russell Reliability Manager (408)432-7069
Cypress Semiconductor, Inc. SRAM R42DH Technology Device: CY7C1032 Package: PLCC
QTP# 99481, Page February, 2000
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualify Metal layer qualified product CY7C1032/31. Marketing Part Package: Cypress Division: CY7C1032 52-pin PLCC Cypress Semiconductor Corporation Rev. 7C1031A What markings Die:
Device Description: Synchronous Cache RAM, R42HD Technology Overall Mask) Level (pre-requisite qualification): Size (stepping): mils mils
TECHNOLOGY/FAB PROCESS DESCRIPTION R42HD
Number Metal Layers: Passivation Type Materials: Number Transitors device Coating(s), used:
Metal Composition: Metal Metal SiO2 Si3N4 6,489,591 CMOS, Double Metal /0.42 SiO2 Cypress Semiconductor Bloomington, Fab4/R42HD
Generic Process Technology/Design Rule (µdrawn): Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Thermal Resistance Theta JESD22-A112 Moisture Sensitivity Level: Name/Location Assembly (prime) facility:
52-pin PLCC Sumitomo EME-6300H Copper Alloy Solder Plated, 90%Sn, 10%Pb Silver Spot Epoxy Thermosonic Level Omedata, Indonesia (INDNS-O) Attach Material: Ablestik 84-1LMISR4
Wire Material/Size: Gold
Note: Please contact Cypress Representative other packages availability.
Cypress Semiconductor, Inc. SRAM R42DH Technology Device: CY7C1032 Package: PLCC
QTP# 99481, Page February, 2000
RELIABILITY TESTS PERFORMED
Stress/Test Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESD-CDM) Latchup Sensitivity
Test Condition (Temp/Bias) MIL-STD-883, Method 3015.7 Cypress Spec. 25-00020 accordance with JEDEC Cypress Spec. 01-00081
Result 2,200V 1,000V 300mA
Cypress Semiconductor, Inc. SRAM R42DH Technology Device: CY7C1032 Package: PLCC
QTP# 99481, Page February, 2000
RELIABILITY FAILURE RATE SUMMARY
Stress/Test High Temperature Operating Life Early Failure Rate1 High Temperature Operating Life2,3 Long Term Failure Rate
Device Tested/ Device Hours 2819 791,500 DHRs
Fails
Activation Energy
Thermal
Failure Rate5
production burn-in 135°C, 6.5V required product. Assuming ambient temperature 55°C junction temperature rise 15°C. Chi-squared estimations used calculate failure rate. Thermal Acceleration Factor calculated from Arrhenius equation
where: =The Activation Energy defect mechanism. Boltzmann's constant 8.62x10-5 eV/Kelvin. junction temperature device under stress junction temperature device conditions.
Failure Rate based 1Meg SRAM(CY7C109/1009), R42HD Technology, qualification (QTP #98064)
Cypress Semiconductor, Inc. SRAM R42DH Technology Device: CY7C1032 Package: PLCC
RELIABILITY TEST DATA
QTP# 99481, Page February, 2000
QTP#:
99481
DEVICE ASSY-LOC FABLOT# ASSYLOT# ==================== ======== ======== ============== STRESS: ESD-CHARGE DEVICE MODEL (1000V)
DURATION ========
====
FAIL MODE
CY7C1032-AJ INDNS-O 4923065 519913447 COMP -STRESS: ESD-HUMAN BODY CIRCUIT 883, METHOD 3015 (2200V) CY7C1032-AJ INDNS-O 4923065 519913447 COMP
Cypress Semiconductor, Inc. SRAM R42DH Technology Device: CY7C1032 Package: PLCC
RELIABILITY TEST DATA
QTP# 99481, Page February, 2000
QTP#: 984371
DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION ==================== ======== ======== ============== ======== ==== STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5,75V)
FAIL MODE
CY7C1031-JC INDNS-O 4814539 519806477 CY7C1031-JC INDNS-O 4811319 519807505 CY7C1031-JC INDNS-O 4811319 519807505 CY7C1031-JC INDNS-O 4811319 519807506 -STRESS: ESD-CHARGE DEVICE MODEL (1000V) CY7C1031-JC INDNS-O 4830915 519811029 COMP -STRESS: ESD-HUMAN BODY CIRCUIT 883, METHOD 3015 (2200V) CY7C1031-JC INDNS-O 4830915 519811029 COMP (See Note) -STRESS: PRESSURE COOKER TEST (121C, 100%RH) CY7C1031-JC INDNS-O 4815593 519809798 CY7C1031-JC INDNS-O 4815593 519809799 CY7C1031-JC INDNS-O 4814539 519810438 CY7C1031-JC INDNS-O 4814539 519810439 -STRESS: COND. 150C, PRECOND. 30C/60%RH (MSL CY7C1031-JC INDNS-O 4815593 519809798 CY7C1031-JC INDNS-O 4815593 519809799 CY7C1031-JC INDNS-O 4814539 519810438 CY7C1031-JC INDNS-O 4814539 519810438 1000 CY7C1031-JC INDNS-O 4814539 519810439 CY7C1031-JC INDNS-O 4814539 519810439 1000
Note: unit failed metal bridging. This known metal bridging. design implemented (new structure) ESD-HBM this type failure related design.
Product Qualification with R42HD Technology
DEVICE RELATED RELIABILITY TEST DATA
Cypress Semiconductor, Inc. SRAM R42DH Technology Device: CY7C1032 Package: PLCC
QTP# 99481, Page February, 2000
QTP#: 980641
DEVICE ASSY-LOC FABLOT# ==================== ======== ======== STRESS: ESD-CHARGE DEVICE MODEL, 1000V ASSYLOT# ============== DURATION ======== ==== FAIL MODE
CY7C109-VC INDNS-O 4738602 519712560 COMP -STRESS: ESD-HUMAN BODY CIRCUIT 883, METHOD 3015, 2200V CY7C109-VC INDNS-O 4738602 519712560 COMP -STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 30C/60%RH CY7C109-VC INDNS-O 4738602 519712560 CY7C109-VC INDNS-O 4738564 519712898 CY7C109-VC INDNS-O 4738564 519712898 CY7C109-VC INDNS-O 4739644 519714390 -STRESS: HIGH TEMPERATURE STORAGE (165C, BIAS) CY7C109-VC INDNS-O 4738602 519712560 CY7C109-VC INDNS-O 4738602 519712560 CY7C109-VC INDNS-O 4738602 519712560 1000 -STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY7C109-VC INDNS-O 4738602 519712560 CY7C109-VC INDNS-O 4738602 519712560 CY7C109-VC INDNS-O 4739644 519714390 CY7C109-VC INDNS-O 4739644 519714390 -STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C109-VC INDNS-O 4739644 519714390 CY7C109-VC INDNS-O 4739644 519714390 CY7C109-VC INDNS-O 4745042 519800651L1 CY7C109-VC INDNS-O 4745042 519800651L1 -STRESS: EXTENDED DYNAMIC BURN-IN (150C, 5.75V) CY7C109-VC INDNS-O 4739644 519714390 1000 -STRESS: COLD LIFE TEST (-30C, 6.5V) CY7C109-VC INDNS-O 4738602 519712560 CY7C109-VC INDNS-O 4738602 519712560 1000 -STRESS: READ RECORD LIFE TEST (150C, 5.75V) CY7C109-VC INDNS-O 4738602 519712560 CY7C109-VC INDNS-O 4738602 519712560 -STRESS: COND. 150C, PRECOND. 30C/60%RH CY7C109-VC INDNS-O 4738602 519712560 CY7C109-VC INDNS-O 4738602 519712560 1000 CY7C109-VC INDNS-O 4738564 519712898 CY7C109-VC INDNS-O 4739644 519714390
SRAM, R42HD Technology, qualification
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