Silicon N-Channel Power Preliminary November 1996 Application

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Silicon N-Channel Power Preliminary November 1996 Application

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HAT2022R
Silicon N-Channel Power
Preliminary November 1996 Application
Features
on-resistance Capable gate drive drive current High density mounting
Outline
SOP-8
Source Gate Drain
HAT2022R
Ordering Information
Hitachi Code EIAJ Code JEDEC Code FP-8DA MS-012AA
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID(pulse)* Pch* Tstg
Ratings +150
Unit
Notes duty cycle When using surface mounted board
HAT2022R
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note Pulse Test |yfs| Ciss Coss Crss td(on) td(off) (11) Unit Test conditions ±100
Zero gate voltage drain current IDSS Gate source cutoff voltage Static drain source state RDS(on) resistance
(0.011) 0.0135 (0.016) 0.02 (18) (1250) (820) (300) (35) (250) (140) (120) (0.8) (90)
diF/dt A/µs
HAT2022R
Power Temperature Derating
Pch* Channel Dissipation
Ambient Temperature (°C)
When using surface mounted board
HAT2022R
When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher D-85622 Feldkirchen Tel: 089-9 80-0 Fax: 089-9
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071

Silicon N-Channel Power Preliminary November 1996 Application

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