ADE-208-527 Target Specification 3rd. Edition June 1997 Features

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ADE-208-527 Target Specification 3rd. Edition June 1997 Features

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HAT1030T
ADE-208-527 Target Specification 3rd. Edition June 1997 Features
on-resistance Capable gate drive drive current High density mounting
Outline
TSSOP-8
Drain Source Gate
MOS1
MOS2
HAT1030T
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS D(pulse) Tstg
Note2 Note3 Note1
Ratings +150
Unit
10µs, duty cycle Drive operation When using glass epoxy board (FR4 mm), Drive operation When using glass epoxy board (FR4 mm),
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltege drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol V(BR)DSS V(BR)GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss d(on) d(off) -0.5 (TBD) -1.5 Unit Test Conditions -10mA, ±100µA, ±8V, -10V, -1mA -2A, Note4 -2A, -2.5V Note4 -2A, -10V Note4 -10V 1MHz -4V, -10V
(0.085) (0.1) (0.12) (TBD) (TBD) (TBD) (TBD) (TBD) (TBD) (TBD) (TBD) (0.18)
HAT1030T
Electrical Characteristics 25°C) (cont)
Item Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test Symbol (TBD) (TBD) (TBD) Unit Test Conditions -3A, Note4 -3A, diF/ =20A/µs
Main Characteristics
Power Temperature Derating Test Condition When using glass epoxy board (FR4 40x40x1.6 mm),
Channel Dissipation
(°C)
Ambient Temperature
HAT1030T
Package Dimensions
Unit:
3.00 4.40
1.10
6.40 0.20
0.17 0.05
0.07 +0.03 -0.04
0.65 0.10 0.22
+0.08 -0.07
0-8° 0.50 0.10
0.13
Hitachi code EIAJ JEDEC
TTP-8D
HAT1030T
When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher D-85622 Feldkirchen Tel: 089-9 80-0 Fax: 089-9
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
Copyright Hitachi, Ltd., 1997. rights reserved. Printed Japan.

ADE-208-527 Target Specification 3rd. Edition June 1997 Features

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