ADE-208-437 7th. Edition December. 1996 Features on-resistance Ca

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ADE-208-437 7th. Edition December. 1996 Features on-resistance Ca

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HAT1025R
ADE-208-437 7th. Edition December. 1996 Features
on-resistance Capable gate drive drive current High density mounting
Outline
SOP-8
Source Gate Drain
MOS1
MOS2
HAT1025R
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Symbol VDSS VGSS ID(pulse) Tstg
Note1
Ratings -4.5 -4.5
Unit
Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note:
Note2 Note3
+150
10µs, duty cycle Drive operation When using glass epoxy board (FR4 mm), Drive operation When using glass epoxy board (FR4 mm),
HAT1025R
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltege drain current IGSS IDSS -0.5 0.065 0.09 -0.9 -1.5 0.095 0.15 -1.4 -4.5A, -4.5A, diF/ =20A/µs
Note4
Symbol V(BR)DSS V(BR)GSS
Unit
Test Conditions -10mA, ±100µA, ±8V, -10V, -1mA -3A,
Note4 Note4
Gate source cutoff voltage VGS(off) Static drain source state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss
-3A, -2.5V -3A, -10V -10V 1MHz -4V, -10V
Note4
Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test td(on) td(off)
HAT1025R
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area -100
Test Condition When using glass epoxy board (FR4 40x40x1.6 mm),
Channel Dissipation
Drain Current
(°C)
Ambient Temperature
Operation Note -0.3 this area limited DS(on) -0.1 -0.03 shot Pulse Drive Operation -0.01 -100 -0.1 -0.3 Drain Source Voltage Note When using glass epoxy board (FR4 40x40x1.6
Typical Output Characteristics -3.5 Pulse Test
Typical Transfer Characteristics
-2.5
Drain Current
-1.5 Drain Source Voltage
Drain Current
Pulse Test Gate Source Voltage
HAT1025R
Drain Source Saturation Voltage Gate Source Voltage
Drain Source State Resistance DS(on)
-0.5
Drain Source Saturation Voltage DS(on)
Static Drain Source State Resistance Drain Current -2.5
-0.4
-0.3
-0.2 -0.5
0.05
-0.1
0.02 0.01 -0.2
Gate Source Voltage
-0.5 Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance
Static Drain Source State Resistance Temperature 0.20
Forward Transfer Admittance Drain Current -0.2 Pulse Test -0.5 Drain Current
0.16
-0.5 -2.5
0.12
0.08 -0.5 0.04
Case Temperature (°C)
HAT1025R
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time (ns)
Typical Capacitance Drain Source Voltage 10000 3000 1000 Crss Ciss Coss
-0.2 -0.5 Reverse Drain Current
Capacitance (pF)
Drain Source Voltage
Dynamic Input Characteristics
Switching Time (ns)
Switching Characteristics
d(off) d(on)
Drain Source Voltage
Gate Source Voltage
-4.5 Gate Charge (nc)
-0.2
duty -0.5 Drain Current
HAT1025R
Reverse Drain Current Souece Drain Voltage
Reverse Drain Current
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width Drive Operation)
Normalized Transient Thermal Impedance
0.05
0.01
0.02 0.01
f(t) °C/W, When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
1000
Pulse Width
HAT1025R
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width Drive Operation)
0.05
0.02 0.01
0.01
f(t) °C/W, When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
1000
Pulse Width
HAT1025R
Package Dimensions
Unit:
1.75
0.25
1.27 0.51
0.25
1.27
0.15 0.25 Hitachi code EIAJ JEDEC FP-8DA MS-012AA
HAT1025R
When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher D-85622 Feldkirchen Tel: 089-9 80-0 Fax: 089-9
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071

ADE-208-437 7th. Edition December. 1996 Features on-resistance Ca

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