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High voltage high current amplifier Outline TO-220AB Ba
Top Searches for this datasheet2SD1756 High voltage high current amplifier Outline TO-220AB Base Collector (Flange) Emitter (Typ) (Typ) Absolute Maximum Ratings 25°C) Item Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: Value 25°C. Symbol VCBO VCEO VEBO IC(peak) Tstg Ratings +150 Unit 2SD1756 Electrical Characteristics 25°C) Item Symbol 1500 Unit Test conditions Collector emitter breakdown V(BR)CBO voltage Collector emitter sustain voltage Emitter base breakdown voltage Collector cutoff current current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage Turn time Storage time Fall time Note: Pulse test. VCEO(SUS) V(BR)EBO ICEO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 tstg -IB2 2SD1756 Maximum Collector Dissipation Curve Collector power dissipation Case temperature (°C) Area Safe Operation Collector current (peak) (max) 0.03 25°C shot Collector emitter voltage Typical Output Characteristics Collector current 25°C Collector emitter voltage Current Transfer Ratio Collector Current 30,000 current transfer ratio 10,000 3,000 1,000 Pulse 25°C Collector current 2SD1756 Collector emitter saturation voltage (sat) Base emitter saturation voltage (sat) Saturation Voltage Collector Current (sat) lC/lB 25°C (sat) 0.03 0.01 Collector current Switching Time Collector Current Switching time (µs) -500 0.03 0.01 tstg 25°C Collector current Transient Thermal Resistance Thermal resistance (°C/W) 1,000 0.03 0.01 25°C Time 1,000 1,000 (ms) 2SD1756 When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher D-85622 Feldkirchen Tel: 089-9 80-0 Fax: 089-9 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Other recent searchesMJD112 - MJD112 MJD112 Datasheet MIC2142 - MIC2142 MIC2142 Datasheet MA366 - MA366 MA366 Datasheet M24LR64-R - M24LR64-R M24LR64-R Datasheet IN74HCT139A - IN74HCT139A IN74HCT139A Datasheet DM74LS04 - DM74LS04 DM74LS04 Datasheet CXA2069Q - CXA2069Q CXA2069Q Datasheet 1N5820 - 1N5820 1N5820 Datasheet 1N5822 - 1N5822 1N5822 Datasheet
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