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frequency high voltage amplifier complementary pair with 2SB1109 2SB11
Top Searches for this datasheet2SD1609, 2SD1610 frequency high voltage amplifier complementary pair with 2SB1109 2SB1110 Outline TO-126 Emitter Collector Base (Typ) (Typ) Absolute Maximum Ratings 25°C) Ratings Item Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg 2SD1609 1.25 +150 2SD1610 1.25 +150 Unit 2SD1609, 2SD1610 Electrical Characteristics 25°C) 2SD1609 Item Collector base breakdown voltage Collector emitter breakdown voltage Emitter base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO current tarnsfer ratio hFE1* hFE2 Base emitter voltage Collector emitter saturation voltage VCE(sat) 2SD1610 Unit Test conditions Collector cutoff current ICBO Gain bandwidth product Collector output capacitance Note: 2SD1609 2SD1610 grouped hFE1 follows. 2SD1609, 2SD1610 Maximum Collector Dissipation Curve Collector power dissipation Ambient temperature (°C) Typical Output Characteristics Collector current (mA) Collector emitter voltage Typical Transfer Characteristics Collector current (mA) Base emitter voltage Current Transfer Ratio Collector Current current transfer ratio Pulse 75°C Collector current (mA) 2SD1609, 2SD1610 Saturation Voltage Collector Current Collector emitter saturation voltage VCE(sat) Base emitter saturation voltage VBE(sat) Pulse VBE(sat) -25°C VCE(sat) 25°C 0.05 Collector current (mA) Gain Bandwidth Product Collector Current Gain bandwidth product (MHz) Collector current (mA) Collector Output Capacitance Collector Base Voltage Collector output capacitance (pF) Collector base voltage 2SD1609, 2SD1610 When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher D-85622 Feldkirchen Tel: 089-9 80-0 Fax: 089-9 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Other recent searchesZMQ-1050 - ZMQ-1050 ZMQ-1050 Datasheet NCN1154 - NCN1154 NCN1154 Datasheet DAC2932 - DAC2932 DAC2932 Datasheet CTTKFR - CTTKFR CTTKFR Datasheet ASA7000 - ASA7000 ASA7000 Datasheet APS-8-1000 - APS-8-1000 APS-8-1000 Datasheet
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