frequency power amplifier complementary pair with 2SB1105 Outline

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frequency power amplifier complementary pair with 2SB1105 Outline

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2SD1605
frequency power amplifier complementary pair with 2SB1105
Outline
TO-220AB
Base Collector (Flange) Emitter (Typ) (Typ)
Absolute Maximum Ratings 25°C)
Item Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature diode forward current Note: Value 25°C. Symbol VCBO VCEO VEBO IC(peak) Tstg
Ratings +150
Unit
2SD1605
Electrical Characteristics 25°C)
Item Symbol 1000 20000 Unit Test conditions
Collector emitter breakdown V(BR)CEO voltage Emitter base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage diode forward voltage Turn time Storage time Fall time Note: Pulse test. VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 tstg
-IB2
2SD1605
Maximum Channel Dissipation Curve Collector power dissipation
Case temperature (°C) Area Safe Operation
iC(peak) IC(max)
Collector current
0.03 0.01 25°C shot pulse
Collector emitter voltage
Typical Output Characteristics
Collector current
25°C
Collector emitter voltage Current Transfer Ratio Collector Current
30,000 current transfer ratio 10,000 3,000 1,000
Pulse
Collector current
2SD1605
Collector emitter saturation voltage VCE(sat) Base emitter saturation voltage VBE(sat) Saturation Voltage Collector Current VBE(sat) VCE(sat) 25°C 0.03 0.01 IC/IB
Collector current Switching Time Collector Current
tstg Switching time (µs) 0.03 0.01 -100 Collector current 25°C
Transient Thermal Resistance Thermal resistance (°C/W) 1,000 0.03 0.01 Time 1,000 1,000 (ms) 25°C
2SD1605
When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher D-85622 Feldkirchen Tel: 089-9 80-0 Fax: 089-9
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071

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