ADE-208-714A 2nd. Edition Dec. 1998 Features Build Biasing Circui
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BB202M
ADE-208-714A 2nd. Edition Dec. 1998 Features
Build Biasing Circuit; reduce using parts cost board space. noise characteristics; typ. MHz) Withstanding ESD; Build absorbing diode. Withstand 200V C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
Source Drain Gate2 Gate1
Notes: Marking "BV-". BB202M individual type number HITACHI BBFET.
BB202M
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate1 source voltage Gate2 source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VG1S VG2S Tstg Ratings +150 Unit
Electrical Characteristics 25°C)
Item Symbol 0.011 +100 ±100 0.03 Unit Test Conditions 200µA, VG1S VG2S +10µA, VG2S ±10µA, VG1S VG1S +9V, VG2S ±9V, VG1S VG2S 100µA VG1S 100µA VG2S 560k VG2S 560k, 1kHz VG2S =6V, 560k 1MHz VG2S 560k, 900MHz Drain source breakdown voltage V(BR)DSS Gate1 source breakdown voltage V(BR)G1SS Gate2 source breakdown voltage V(BR)G2SS Gate1 source cutoff current Gate2 source cutoff current Gate1 source cutoff voltage Gate2 source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure G1SS G2SS VG1S(off) VG2S(off) D(op) |yfs|
BB202M
Main Characteristics
Test Circuit Operating Items D(op) |yfs|, Ciss, Coss, Crss, Gate Gate
Source
Drain
Application Circuit VAGC BBFET Output
Input
BB202M
900MHz Power Gain, Noise Test Circuit
Output
Input
C4`C6
Variable Capacitori10pF MAX) Disk Capacitori1000pF) Capacitori1000pF)
i1mm Copper wirej UnitFmm
RFCF1mm Copper wire with enamel 4turns inside
BB202M
Maximum Channel Power Dissipation Curve (mW) (mA)
Typical Output Characteristics
Channel Power Dissipation
Drain Current
(°C)
Ambient Temperature
Drain Source Voltage
Drain Current Gate2 Source Voltage (mA)
Drain Current Gate1 Voltage (mA)
Drain Current
Drain Current
Gate2 Source Voltage
VG2S
Gate1 Voltage
BB202M
Drain Current Gate1 Voltege (mA) (mA)
Drain Current Gate1 Voltege
Drain Current
Drain Current
Gate1 Voltage
Gate1 Voltage
Forward Transfer Admittance (mS)
Forward Transfer Admittance (mS)
Forward Transfer Admittance Gate1 Voltage
Forward Transfer Admittance Gate1 Voltage
Gate1 Voltage
Gate1 Voltage
BB202M
Forward Transfer Admittance Gate1 Voltage
Forward Transfer Admittance (mS)
Power Gain Gate Resistance
Power Gain (dB)
1000 2000 5000 10000
Gate1 Voltage
Gate Resistance
Noise Figure Gate Resistance Power Gain (dB)
1000 2000 5000 10000
Power Gain Drain Current
Noise Figure (dB)
variable
Gate Resistance
Drain Current (mA)
BB202M
Noise Figure Drain Current Drain Current Gate Resistance
Drain Current (mA)
Noise Figure (dB)
variable
1000 2000 5000 10000
Drain Current (mA)
Gate Resistance
Gain Reduction Gate2 Source Voltage Gain Reduction (dB) Input Capacitance Ciss (pF)
Input Capacitance Gate2 Source Voltage
Gate2 Source Voltage
Gate2 Source Voltage
BB202M
Parameter Frequency
-1.5 -120° -90° -60° 180° 150°
Parameter Frequency
120°
Scale: div.
-150°
-30°
Test Condition 1000 step)
Test Condition 1000 step)
Parameter Frequency
120°
Parameter Frequency
Scale: 0.01 div.
150°
180°
-150° -30° -120° -90° -60° -1.5
Test Condition 1000 step)
Test Condition 1000 step)
BB202M
Sparameter (VDS VG2S 560k,
(MHz) 1000 0.995 0.991 0.987 0.985 0.975 0.969 0.954 0.948 0.933 0.923 0.912 0.892 0.882 0.868 0.851 0.834 0.815 0.801 0.788 0.768 -2.9 -6.0 -9.4 -12.4 -15.4 -18.4 -21.5 -24.6 -27.5 -30.7 -33.6 -36.3 -39.3 -42.0 -45.0 -47.7 -50.6 -53.5 -55.9 -58.5 2.22 2.21 2.21 2.19 2.18 2.15 2.12 2.11 2.08 2.05 2.02 1.99 1.96 1.92 1.90 1.87 1.83 1.82 1.79 1.77 176.0 172.0 168.0 163.6 159.3 155.3 151.7 147.6 143.7 139.9 136.2 123.9 128.7 125.4 122.0 117.9 114.9 111.2 107.8 104.4 0.00046 0.00109 0.00122 0.00180 0.00228 0.00246 0.00273 0.00331 0.00334 0.00357 0.00328 0.00305 0.00322 0.00297 0.00286 0.00273 0.00226 0.00143 0.00131 0.00189 66.9 90.4 76.5 81.9 86.0 78.8 76.2 66.9 74.7 68.4 67.5 69.8 66.7 70.3 74.4 71.9 88.1 95.5 98.6 145.2 0.977 0.987 0.987 0.985 0.983 0.981 0.979 0.976 0.973 0.969 0.965 0.961 0.958 0.953 0.948 0.944 0.940 0.934 0.931 0.925 -1.0 -3.2 -5.0 -6.7 -8.4 -10.0 -11.7 -13.4 -14.9 -16.8 -18.3 -19.9 -21.5 -23.4 -24.7 -26.2 -27.9 -29.4 -31.0 -32.9
BB202M
Package Dimensions (Unit:
2.95
0.65
0.95 0.95 0.05
0.05
0.16 0.06
0.15
0.85
0.95
1.1}
0.65
0.05
0.05
Hitachi Code EIAJ JEDEC
MPAK-4R
BB202M
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
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Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, 94005-1897 Tel: (800) 285-1601 Fax: (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Copyright Hitachi, Ltd., 1998. rights reserved. Printed Japan.
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