ADE-208-713A 2nd. Edition Dec. 1998 Features Build Biasing Circui

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ADE-208-713A 2nd. Edition Dec. 1998 Features Build Biasing Circui

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BB201M
ADE-208-713A 2nd. Edition Dec. 1998 Features
Build Biasing Circuit; reduce using parts cost board space. noise characteristics; typ. MHz) Withstanding ESD; Build absorbing diode. Withstand 200V C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
Source Drain Gate2 Gate1
Notes: Marking "AV-". BB201M individual type number HITACHI BBFET.
BB201M
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate1 source voltage Gate source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VG1S VG2S Tstg Ratings +150 Unit
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Symbol V(BR)DSS 0.45 0.012 +100 ±100 0.03 Unit Test Conditions 200µA, VG1S VG2S +10µA, VG2S ±10µA, VG1S VG1S +5V, VG2S ±5V, VG1S VG2S 100µA VG1S 100µA VG2S 220k VG2S 220k, 1kHz VG2S =4V, 220k 1MHz VG2S 220k, 900MHz
Gate1 source breakdown voltage V(BR)G1SS Gate2 source breakdown voltage V(BR)G2SS Gate1 cutoff current Gate2 cutoff current Gate1 source cutoff voltage Gate2 source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse capacitance Power gain Noise figure G1SS G2SS VG1S(off) VG2S(off) D(op) |yfs|
BB201M
Main Characteristics
Test Circuit Operating Items D(op) |yfs|, Ciss, Coss, Crss, Gate Gate
Source
Drain
Application Circuit VAGC BBFET Output
Input
BB201M
900MHz Power Gain, Noise Test Circuit
Output
Input
C4`C6
Variable Capacitori10pF MAX) Disk Capacitori1000pF) Capacitori1000pF)
i1mm Copper wirej UnitFmm
RFCF1mm Copper wire with enamel 4turns inside
BB201M
Power Temperature Derating (mW) (mA) Typical Output Characteristics
Channel Dissipation
Drain Current
(°C)
Ambient Temperature
Drain Source Voltage
Current Gate2 Source Voltage
Current Gate1 Source Voltage (mA)
(mA)
Drain Current
Drain Current
VG1S
Gate2 Source Voltage
VG2S
Gate1 Source Voltage
BB201M
Current Gate1 Source Voltege (mA) (mA) Current Gate1 Source Voltege
Drain Current
Drain Current
Gate1 Source Voltage VG1S
Gate1 Source Voltage VG1S
Forward Transfer Admittance (mS)
Forward Transfer Admittance (mS)
Forward Transfer Admittance Gate1 Source Voltage
Forward Transfer Admittance Gate1 Source Voltage
Gate1 Source Voltage
Gate1 Source Voltage VG1S
BB201M
Forward Transfer Admittance Gate1 Source Voltage
Forward Transfer Admittance (mS)
Power Gain Gate Resistance Power Gain (dB)
Gate1 Source Voltage VG1S
1000 2000 5000
Gate Resistance
Noise Figure Gate Resistance Noise Figure (dB) Power Gain (dB)
Power Gain Drain Current
1000 2000 5000
variable
Gate Resistance
Drain Current (mA)
BB201M
Noise Figure Drain Current 1000 3000 10000 Drain Current Gate Resistance
variable
Drain Current (mA)
Noise Figure (dB)
Drain Current (mA)
Gate Resistance
Gain Reduction Gate2 Source Voltage Gain Reduction (dB) Input Capacitance Ciss (pF)
Input Capacitance Gate2 Source Voltage
Gate2 Source Voltage
Gate2 Source Voltage
BB201M
Output Capacitance Gate2 Source Voltage Output Capacitance Coss (pF)
Gate2 Source Voltage
BB201M
Package Dimensions (Unit:
2.95
0.65
0.95 0.95 0.05
0.05
0.16 0.06
0.15
0.85
0.95
1.1}
0.65
0.05
0.05
Hitachi Code EIAJ JEDEC
MPAK-4R
BB201M
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write
Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, 94005-1897 Tel: (800) 285-1601 Fax: (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Copyright Hitachi, Ltd., 1998. rights reserved. Printed Japan.

ADE-208-713A 2nd. Edition Dec. 1998 Features Build Biasing Circui

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