M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8
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MITSUBISHI LSIs MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT) 8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
MITSUBISHI M5M29FB/T800FP, 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable mobile personal computing, communication products. M5M29FB/T800FP, fabricated CMOS technology peripheral circuits DINOR(Divided line NOR) architecture memory cells, available 44pin 48pin TSOP(I).
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
FEATURES
524,288 word 16bit 1,048,576 word 3.3V±0.3V Supply voltage 80/100/120ns (Max) Access time
Organization Power Dissipation (Max.) Read (Max.) Program/Erase 0.72 (Max.) Standby Deep power down mode 3.3µW (typ.) Auto program 7.5ms (typ.) Program Time 128word Program Unit Auto Erase (typ.) Erase time Erase Unit Boot Block 8Kword 16Kbyte 4Kword 8Kbyte Parameter Block 16Kword 32Kbyte Main Block 32Kword 64Kbyte Program/Erase cycles 100Kcycles Boot Block Bottom Boot M5M29FB800 Boot M5M29FT800 Other Functions Software Command Control Selective Block Lock Erase Suspend/Resume Program Suspend/Resume Status Register Read Sleep Package 48-Lead, 12mmx 20mm TSOP (type-I) 44-Lead
CONFIGURATION (TOP VIEW)
ADDRESS INPUTS
CHIP ENABLE INPUT
DQ10 DQ11
RESET/ POWER DOWN INPUT
WRITE ENABLE INPUT ADDRESS INPUTS /BYTE BYTE ENABLE INPUT DQ15/A-1 DQ14 DQ13 DQ12
M5M29FB/T800FP
OUTPUT ENABLE INPUT
DATA INPUTS/ OUTPUTS
DATA INPUTS/ OUTPUTS
Outline 600mil 44-pin (FP: 44P2A-A)
APPLICATION
Code Storage BIOS Digital Cellular Phone/Telecommunication
RY/BY
M5M29FB/T800VP
/BYTE DQ15/A-1 DQ14 DQ13 DQ12 DQ11 DQ10
/BYTE DQ15/A-1 DQ14 DQ13 DQ12 DQ11 DQ10
M5M29FB/T800RV
RY/BY
Outline 48pin TSOP type-I 20mm) VP(Normal bend): 48P3R-B
RV(Reverse bend): 48P3R-C
CONNECTION
This product compatible with HN29WB/T800 Hitachi Ltd.
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
BLOCK DIAGRAM
/BYTE RY/BY
WORD PAGE BUFFER Boot Block Parameter Block1 Parameter Block2 Main Block Main Block 16KW 32KW
(3.3V) (0V)
X-DECODER
ADDRESS INPUTS
Main Block
32KW
Y-DECODER
Y-GATE SENSE AMP.
STATUS REGISTER
MULTIPLEXER
CHIP ENABLE INPUT OUTPUT ENABLE INPUT WRITE ENABLE INPUT WRITE PROTECT INPUT RESET/POWER DOWN INPUT BYTE ENABLE INPUT READY/BUSY OUTPUT
INPUT/OUTPUT BUFFERS
D15/A-1D14D13
DATA INPUTS/OUTPUTS
FUNCTION
M5M29FB/T800FP,VP,RV includes on-chip program/erase control circuitry. Write State Machine (WSM) controls block erase page program operations. Operational modes selected commands written Command User Interface (CUI). Status Register indicates status when successfully completes desired program block erase operation. Deep Powerdown mode enabled when GND, minimizing power consumption. Read M5M29FB/T800FP,VP,RV three read modes, which accesses memory array, Device Identifier Status Register. appropriate read command required written CUI. Upon initial device powerup after exit from deep powerdown, M5M29FB/T800 automatically resets read array mode. read array mode, level input /OE, high level input /RP, address signals address inputs (A0-A18) output data addressed location data input/output(D0-15). Write Writes enables reading memory array data, device identifiers reading clearing Status Register. They also enable block erase program. written bringing level, while level high level. Address data latched earlier rising edge /CE. Standard micro-processor write timings used. Output Disable When VIH, output from devices disabled. Data input/output high-impedance(High-Z) state. Standby When VIH, device standby mode power consumption reduced. Data input/output high-impedance(High-Z) state. memory deselected during block erase program, internal control circuits remain active device consume normal active power until operation completes. Deep Power-Down When VIL, device deep powerdown mode power consumption substantially low. During read modes, memory deselected data input/output high-impedance(High-Z) state. After return from powerdown, reset Read Array Status Register cleared value 80H. During block erase program modes, will abort either operation. Memory array data block being altered become invalid.
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
SOFTWARE COMMAND DEFINITIONS device operations selected writing specific software command into Command User Interface. Read Array Command (FFH) device Read Array mode initial device powerup after exit from deep powerdown, writing Command User Interface. device remains Read Array mode until other commands written. Read Device Identifier Command (90H) Though PROM programmers normally read device identifier codes raising multiplexing high voltage onto address lines desired micro-processor system. other means read device identifier codes that Read Device Identifier Code Command(90H) written command latch. Following command write, manufacturer code device code read from address 0000H 0001H, respectively. Read Status Register Command (70H) Status Register read after writing Read Status Register command Command User Interface. contents Status Register latched later falling edge /CE. must toggled every status read. Clear Status Register Command (50H) Erase Status Program Status bits "1"s Write State Machine only reset Clear Status Register command 50H. These bits indicates various failure conditions. Block Erase Confirm Command (20H/D0H) Automated block erase initiated writing Block Erase command followed Confirm command D0H. address within block erased required. executes iterative erase pulse application erase verify operation. Page Program Commands(41H) Page Program allows fast programming 128words data. Writing initiates page program operation. From cycle 129th cycle write data must serially inputted. Address A6-0 have incremented from 7FH. After completion data loading, controls program pulse application verify operation. Basically re-program must done page which already programmed. Suspend/Resume Command (B0H/D0H) Writing Suspend command during block erase operation interrupts block erase operation allows read from another block memory. Writing Suspend command during program operation interrupts program operation allows read from another block memory. device continues output Status Register data when read, after Suspend command written Polling Status Suspend Status bits will determine when erase operation program operation been suspended. this point, writing Read Array command enables reading data from blocks other than that which suspended. When Resume command written CUI, will continue with erase program processes. DATA PROTECTION M5M29FB/T800 provides selectable block locking memory blocks. Each block associated nonvolatile lock-bit which determines lock status block. addition, M5M29FB/T800 master Write Protect (WP) which prevents modifications memory blocks whose lock-bits "0", when low. When high VHH, blocks programmed erased regardless state lock-bits, lock-bits cleared erase. Power Supply Voltage When power supply voltage (Vcc) less than 2.2V, device Read-only mode. delay time required before device operation initiated. delay time measured from time reaches Vccmin (3.0V). During power /RP=GND recommended. Falling Busy status recommended possibility damaging device.
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
Bytemode) Wordmode) Bytemode) Wordmode)
F0000H-FFFFFH 78000H-7FFFFH E0000H-EFFFFH 70000H-77FFFH D0000H-DFFFFH 68000H-6FFFFH C0000H-CFFFFH 60000H-67FFFH B0000H-BFFFFH 58000H-5FFFFH A0000H-AFFFFH 50000H-57FFFH 90000H-9FFFFH 48000H-4FFFFH 80000H-8FFFFH 40000H-47FFFH 70000H-7FFFFH 38000H-3FFFFH 60000H-6FFFFH 30000H-37FFFH 50000H-5FFFFH 28000H-2FFFFH 40000H-4FFFFH 20000H-27FFFH 30000H-3FFFFH 18000H-1FFFFH 20000H-2FFFFH 10000H-17FFFH 10000H-1FFFFH 08000H-0FFFFH 08000H-0FFFFH 04000H-07FFFH 06000H-07FFFH 03000H-03FFFH 04000H-05FFFH 02000H-02FFFH 00000H-03FFFH 00000H-01FFFH A-1-A18(Bytemode) A0-A18(Wordmode)
32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 16Kword MAIN BLOCK 4Kword PARAMETER BLOCK 4Kword PARAMETER BLOCK 8Kword BOOT BLOCK
M5M29FB800 Memory
FC000H-FFFFFH 7E000H-7FFFFH FA000H-FBFFFH 7D000H-7DFFFH F8000H-F9FFFH 7C000H-7CFFFH F0000H-F7FFFH 78000H-7BFFFH E0000H-EFFFFH 70000H-77FFFH D0000H-DFFFFH 68000H-6FFFFH C0000H-CFFFFH 60000H-67FFFH B0000H-BFFFFH 58000H-5FFFFH A0000H-AFFFFH 50000H-57FFFH 90000H-9FFFFH 48000H-4FFFFH 80000H-8FFFFH 40000H-47FFFH 70000H-7FFFFH 38000H-3FFFFH 60000H-6FFFFH 30000H-37FFFH 50000H-5FFFFH 28000H-2FFFFH 40000H-4FFFFH 20000H-27FFFH 30000H-3FFFFH 18000H-1FFFFH 20000H-2FFFFH 10000H-17FFFH 10000H-1FFFFH 08000H-0FFFFH 00000H-0FFFFH 00000H-07FFFH A-1-A18(Bytemode) A0-A18(Wordmode)
8Kword BOOT BLOCK 4Kword PARAMETER BLOCK 4Kword PARAMETER BLOCK 16Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK 32Kword MAIN BLOCK
M5M29FT800 Memory
OPERATIONS Operations Word-Wide Mode (/BYTE=VIH)
Mode Read Pins DQ0-15 Data Status Register Data Lock Data (DQ6) Identifier Code Hi-Z Hi-Z Command/Data Command Command Hi-Z RY/BY (Hi-Z) (Hi-Z) (Hi-Z)
Array Status Register Lock Status Identifier Code Output disable Stand Program Write Erase Others Deep Power Down
Operations Byte-Wide Mode (BYTE=VIL)
Mode Pins DQ0-7 Data Status Register Data Lock Data (DQ6) Identifier Code Hi-Z Hi-Z Command/Data Command Command Hi-Z RY/BY (Hi-Z) (Hi-Z) (Hi-Z)
Array Read Status Register Lock Status Identifier Code Output disable Stand Program Write Erase Others Deep Power Down
RY/BY VOH(Hi-Z). *The RY/BY open drain output indicates status internal WSM. When low,it indicates that Busy performing operation. pull-up resistor 10K-100K Ohms required allow RY/BY signal transition high indicating Ready condition. control pins.
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY SOFTWARE COMMAND DEFINITION Command List
Command Read Array Device Identifier Read Status Register Clear Status Register Page Program Block Erase Confirm Suspend Resume Read Lock Status Lock Program Confirm Erase Unlocked Blocks Sleep Mode Write Write Write Write Write Write Write Write Write Write Write Write cycle Address Data (D7-0) Mode cycle Address Data (D7-0) Write Mode cycle Address Data (D7-0)
Read Read Write Write
Read Write Write
word-wide mode, upper byte data (D8-D15) ignored. IA=ID Code Address A0=VIL (Manufacturer's Code) A0=VIH (Device Code), ID=ID Code, /BYTE =VIL A-1, A1-A18 VIL, /BYTE =VIH A1-A18 Status Register Data WA=Write Address, WD=Write Data. /BYTE =VIL Write Address Write Data must provided sequentially from A-1-A6. Page size 256Byte (256byte 8bit), /BYTE =VIH Write Address Write Data must provided sequentially from A0-A6. Page size 128word (128word 16bit). Block Address Addresses except Block Address mest VIH.) provides Block Lock Status, Block Unlock, Block Locked. Sleep command (F0H) device into sleep mode after completing current operation. active current reduced deep power -down levels. Read Array command (FFH) must written device sleep mode.
BLOCK LOCKING
Package TSOP Package
Lock Bit(Internally)
Lock Bit(Internally)
Write Protection Provided Blocks Locked (Deep Power Down Mode) Blocks UnLocked Blocks Locked (Depend Lock Data) Blocks Unlocked (Depend Lock Data) Blocks Unlocked
provides Lock Status each block after writing Read Lock Status command (71H). case TSOP package, must switched during performing Read Write operations Busy (WSMS
STATUS REGISTER
Symbol SR.7 SR.6 SR.5 SR.4 SR.3 SR.2 SR.1 SR.0 (D7) (D6) (D5) (D4) (D3) (D2) (D1) (D0) Status Write State Machine Status Suspend Status Erase Status Program Status Block Status after Program Reserved Reserved Device Sleep Status Definition Ready Suspended Error Error Error Device Sleep Busy Operation Progress Completed Successful Successful Successful Device Sleep
*The RY/BY open drain output indicates status internal WSM. When low,it indicates that Busy performing operation. pull-up resistor 10K-100K Ohms required allow RY/BY signal transition high indicating Ready condition. indicates block status after page programming. When "1", page over-programed cell over-program occures, device block fail. However "1", please block erase block. block revive.
DEVICE IDENTIFIER CODE
Code Manufacturer Code Device Code (-T) Device Code (-B) Pins Hex. Data
word-wide mode, same data D7-0 read from D15-8. Mode 11.5V~13.0V min.200ns before falling edge ready status. Min.200ns after return ,device can't accessed. A1~A8, A10~A18, /CE,/OE VIL, D15/A-1 (/BYTE
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Symbol Tstg Parameter voltage input output voltage except Vcc,A9,/RP1) A9,RP supply voltage Ambient temperature Temperature under bias Storage temperature Output short circuit current Conditions
With respect Ground
-0.2 -0.6 -0.6
14.0
Unit
Minimum voltage -0.5V input/output pins. During transitions, this level undershoot -2.0V periods <20ns. Maximum voltage input/output pins VCC+0.5V which, during transitions, overshoot VCC+1.5V periods <20ns.
CAPACITANCE
Symbol COUT Parameter Input capacitance (Address, Control Pins) Output capacitance Test conditions 25°C, 1MHz, Vout Limits Unit
ELECTRICAL CHARACTERISTICS 70°C, 3.3V±0.3V, unless otherwise noted)
Symbol ISB1 ISB2 ISB3 ISB4 ICC1 ICC2 ICC3 ICC4 ICC5 VIHH VOH1 VOH2 VLKO Parameter Input leakage current Output leakage current standby current Test conditions 0VVINVCC 0VVOUTVCC 3.6V, VIN=VIL/VIH, =/WP 3.6V, VIN=GND VCC, /WP= VCC±0.3V 3.6V, VIN=VIL/VIH, 3.6V, VIN=GND VCC, =GND±0.3V 3.6V, VIN=VIL/VIH, VIL, /RP=OE=VIH, 10MHz, IOUT 3.6V,VIN=VIL/VIH, =/WE= VIL, /RP=/OE=VIH 3.6V, VIN=VIL/VIH, =/WP 3.6V, VIN=VIL/VIH, =/WP 3.6V, VIN=VIL/VIH, =/WP 11.4 11.4 5.8mA -2.5mA -100µA 0.85Vcc
Vcc-0.4
Limits Typ1)
±1.0 12.6 12.6
Vcc+0.5
Unit
deep powerdown current read current Word Byte Write current Word Byte program current erase current suspend current block unlock current intelligent identifier current unlock voltage intelligent identifier voltage Input voltage Input high voltage Output voltage Output high voltage Lock-Out voltage
12.0 12.0
0.45
currents unless otherwise noted. Typical values Vcc=3.3V, Ta=25°C protect against initiation write cycle during power-up/ down, write cycle locked less than VLKO. less than VLKO, Write State Machine reset read mode. When Write State Machine Busy state, less than VLKO, alteration memory contents
occur.
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY ELECTRICAL CHARACTERISTICS ~70°C, 3.3±0.3V) Read-Only Mode
Symbol
Parameter Read cycle time Address access time Chip enable access time Output enable access time Chip enable output low-Z Chip enable high output high Output enable output low-Z Output enable high output high output high-Z /BYTE access time /BYTE output high-Z Output hold from /CE, /OE, addresses /BYTE high Address /BYTE high hold from high recovery
(AD) (CE) (OE) tCLZ tDF(CE) tOLZ tDF(OE) tPHZ tBHZ tBCD tBAD tOEH
tAVAV tAVQV tELQV tGLQV tELQX tEHQZ tGLQX tGHQZ tPLQZ tFLQZ tELFL/H tAVFL/H tWHGL tPHEL
M5M29FB/T800-80
Limits M5M29FB/T800-10
M5M29FB/T800-12
Unit
ta(BYTE) tFL/HQV
Timing measurements made under waveforms read operations.
ELECTRICAL CHARACTERISTICS 70°C, 3.3V±0.3V) Write Mode (/WE control)
Symbol
Parameter Write cycle time Address set-up time Address hold time Data set-up time Data hold time Chip enable set-up time Chip enable hold time Write pulse width Write pulse width high Byte enable high set-up time Byte enable high hold time Block Lock set-up write enable high Block Lockhold from valid Duration auto-program operation Duration auto-block erase operation Write enable high RY/BY high recovery write enable
tWPH tBLS tWPS tBLH tWPH tDAP tDAE tWHRL
tAVAV tAVWH tWHAX tDVWH tWHDX tELWL tWHEH tWLWH tWHWL tFL/HWH tWHFL/H tPHHWH tQVPH tWHRH1 tWHRH2 tWHRL tPHWL
M5M29FB/T800-80
Limits M5M29FB/T800-10
M5M29FB/T800-12
Unit
Read timing parameters during command write operations mode same during read-only operations mode. Typical values Vcc=3.3V, Ta=25°C
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
ELECTRICAL CHARACTERISTICS 70°C, 3.3V±0.3V) Write Mode (/CE control)
Symbol
Parameter Write cycle time Address set-up time Address hold time Data set-up time Data hold time Write enable set-up time Write enable hold time pulse width pulse width high Byte enable high set-up time Byte enable high hold time Block Lock set-up write enable high Block Lockhold from valid Duration auto-program operation Duration auto-block erase operation enable high RY/BY high recovery write enable
tCEP tCEPH tBLS tWPS tBLH tWPH tDAP tDAE tEHRL
tAVAV tAVEH tEHAX tDVEH tEHDX tWLEL tEHWH tELEH tEHEL tFL/HEH tEHFL/H tPHHEH tQVPH tEHRH1 tEHRH2 tEHRL tPHEL
M5M29FB/T800-80
Limits M5M29FB/T800-10
M5M29FB/T800-12
Unit
Read timing parameters during command write operations mode same during read-only operations mode. Typical values Vcc=3.3V, Ta=25°C
Erase Program Performance
Parameter Block Erase Time Main Block Write Time (Page Mode) Page Write Time Unit
Power Down Timing
Symbol tVCS Parameter =VIH set-up time from Vccmin Unit
During power up/down, noise pulses control pins, device possibility accidental erasure programming. device must protected against initiation write cycle memory contens during power up/down. delay time min.2µsec always required before read operation write operation initiated from time reaches Vccmin during power up/down. holding VIL, contens memory protected during power up/down. During power must held min.2µs from time reaches Vccmin. During power down, must held until reaches GND. doesn't have latch mode must held during read operation erase/program operation.
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY POWER DOWN TIMING
Read /Write Inhibit Read /Write Inhibit Read /Write Inhibit
3.3V tVCS
WAVEFORMS READ OPERATION TEST CONDITIONS
ADDRESSES
ADDRESS VALID
TEST CONDITIONS CHARACTERISTICS Input voltage 3.0V Input rise fall times (80ns) 10ns (100/120ns) Reference voltage timing measurement 1.5V Output load 1TTL gate CL(100pF 100/120ns) CL(30pF 80ns) HIGH-Z
1.3V 1N914 3.3k =30/100pF
(AD) (CE) tDF(CE)
tOEH (OE) tOLZ HIGH-Z tCLZ tDF(OE)
DATA
OUTPUT VALID
tPHZ
BYTE WAVEFORMS READ OPERATION
ADDRESSES A18) ta(CE) ta(OE) ta(BYTE) tOLZ tCLZ tBCD HIGH-Z tBAD
OUTPUT VALID VALID VALID ADDRESS VALID ADDRESS VALID
ta(AD)
tDF(CE)
tDF(OE) tBAD ta(BYTE)
/BYTE
DATA DATA D14)
tBHZ HIGH-Z
VALID
ta(AD)
When /BYTE=VIH, /CE=/OE=VIL D15/A-1 output status. this time, input signal must applied.
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY WAVEFORMS PAGE PROGRAM OPERATION (/WE control)
A7~A18
/BYTE=VIL (A-1~A6) /BYTE=VIH ~A6) 02H~FEH 02H~7EH ADDRESS VALID
PROGRAM READ STATUS WRITE READ REGISTER ARRAY COMMAND
ta(CE) ta(OE) tOEH tDAE,tDAP
tWPH
DATA
tWHRL
RY/BY
/BYTE
tBLS
tBLH
tWPS tWPH
WAVEFORMS ERASE OPERATIONS (/WE control)
ADDRESSES
ERASE READ STATUS REGISTER WRITE READ ARRAY COMMAND
DATA
ADDRESS VALID
ta(CE)
tOEH tDAP,tDAE
ta(OE)
tWPH
tWHRL
RY/BY
/BYTE
tBLS tWPS
tBLH
tWPH
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY WAVEFORMS PAGE PROGRAM OPERATION (/CE control)
A7~A18
/BYTE=VIL (A-1~A6)VIH /BYTE=VIH ~A6) 02H~FEH 02H~7EH ADDRESS VALID
PROGRAM
READ STATUS WRITE READ REGISTER ARRAY COMMAND
tCEPH tCEP
ta(CE) ta(OE) tOEH tDAE,tDAP
DATA
tEHRL
RY/BY
/BYTE
tBLS
tBLH
tWPS tWPH
WAVEFORMS ERASE OPERATIONS (/CE control)
ERASE
ADDRESSES
ADDRESS VALID
READ STATUS REGISTER
WRITE READ ARRAY COMMAND
ta(CE)
tCEP tCEPH tOEH tDAP,tDAE
ta(OE)
DATA
tEHRL
RY/BY
/BYTE tBLS
1997 Rev.6.1
tBLH
tWPS tWPH
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
FULL STATUS CHECK PROCEDURE
STATUS REGISTER READ
SR.4 SR.5
COMMAND SEQUENCE ERROR
SR.5
BLOCK ERASE ERROR
SR.4
PROGRAM ERROR (PAGE, LOCK BIT)
SR.3 SUCCESSFUL (BLOCK ERASE, PROGRAM)
PROGRAM ERROR (BLOCK)
LOCK PROGRAM FLOW CHART
START
PAGE PROGRAM FLOW CHART
START
WRITE
WRITE
WRITE BLOCK ADDRESS
SR.7
WRITE ADDRESS DATA
SR.4 LOCK PROGRAM SUCCESSFUL
LOCK PROGRAM FAILED
STATUS REGISTER READ
SR.7
WRITE
FULL STATUS CHECK DESIRED
SUSPEND LOOP WRITE
PAGE PROGRAM COMPLETED
1997 Rev.6.1
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
BLOCK ERASE FLOW CHART
START
SUSPEND RESUME FLOW CHART
START
WRITE
WRITE
SUSPEND
WRITE BLOCK ADDRESS
STATUS REGISTER READ
STATUS REGISTER READ
SR.7
SR.7
WRITE
SR.6 WRITE
PROGRAM ERASE COMPLETED
FULL STATUS CHECK DESIRED
SUSPEND LOOP WRITE
DONE READING WRITE READ ARRAY DATA
BLOCK ERASE COMPLETED
RESUME
OPERATION RESUMED
1997 Rev.6.1
Read/Standby State
Read Status Register Read Device Identifier Read Lock Status
Clear Status Register
Sleep State
Read Device Identifier Read Lock Status
[Wake
Read Status Register
[Sleep]
Read Array
Setup State Page Program Setup
OTHER i=0-255
Lock Program Setup
Block Erase Setup
Erase Unlocked Blocks Setup
OTHER OTHER
OPERATION STATUS EFFECTIVE COMMAND
Internal State
Program Verify Read Status Register
READY
Erase Verify Read Status Register
request Sleep
return
REQUEST SLEEP?
Suspend State Read Status Register
invalid data
Read Device Identifier
Read Lock Status
request Sleep
return
M5M29FB/T800FP,VP,RV-80,-10,-12
MITSUBISHI LSIs
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
1997 Rev.6.1
Read Array
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