Silicon epitaxial planer transistor high-frequency amplification

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Silicon epitaxial planer transistor high-frequency amplification

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XP06435 (XP6435)
Silicon epitaxial planer transistor
high-frequency amplification
(0.425)
0.2±0.05
0.12+0.05 -0.02
1.25±0.10 2.1±0.1
Features
elements incorporated into package. Reduction mounting area assembly cost half.
(0.65) (0.65) 1.3±0.1 2.0±0.1
Basic Part Number Element
0.9±0.1
Absolute Maximum Ratings
Parameter Collector base voltage Rating Collector emitter voltage element Emitter base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg
(Ta=25°C)
Ratings +150 Unit
Emitter (Tr1) Emitter (Tr2) Base (Tr2)
Collector (Tr2) Base (Tr1) Collector (Tr1) EIAJ SC-88 SMini6-G1 Package
Marking Symbol: Internal Connection
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer ratio Collector emitter saturation voltage Base emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance
(Ta=25°C)
Symbol ICBO ICEO IEBO (small/large)*1 VCE(sat) Conditions -10V, -20V, -5V, -10V, -10V, -10mA, -1mA -10V, -1mA -10V, 1mA, 200MHz -10V, 1mA, 5MHz -10V, 1mA, 2MHz -10V, 1mA, 10.7MHz 0.99 -100 Unit
Ratio between elements
Note) Part number Parenthesis shows conventional part number.
0.9+0.2 -0.1
2SA1022 elements
0.2±0.1
XP06435
-100
VCE(sat)
Collector emitter saturation voltage VCE(sat)
Ta=25°C
IC/IB=10
Total power dissipation (mW)
Collector current (mA)
-0.3 -0.1 -0.03 -0.01 -0.1 -0.3 Ta=75°C 25°C -25°C
-250µA -200µA
-150µA -100µA -50µA
-100
Ambient temperature (°C)
Collector emitter voltage
Collector current (mA)
Collector output capacitance (pF)
VCE= -10V f=1MHz IE=0 Ta=25°C
Common emitter reverse transfer capacitance (pF)
IC=-1mA f=10.7MHz Ta=25°C
Forward current transfer ratio
Ta=75°C
25°C -25°C
-0.1 -0.3
-100
-0.1 -0.3
-100
-100
Collector current (mA)
Collector base voltage
Collector emitter voltage
VCB=-10V Ta=25°C
VCE=-10V f=100MHz Ta=25°C
VCB=-10V f=100MHz Ta=25°C
Transition frequency (MHz)
Noise figure (dB)
-100
Power gain (dB)
-0.1 -0.3
Emitter current
(mA)
Collector current
(mA)
Emitter current (mA)
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2001

Silicon epitaxial planer transistor high-frequency amplification

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