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Features on-resistance High speed switching drive current gate dr
Top Searches for this datasheet2SK971 Features on-resistance High speed switching drive current gate drive device driven from source Suitable motor drive, DC-DC converter, power switch solenoid drive Outline TO-220AB Gate Drain (Flange) Source 2SK971 Absolute Maximum Ratings 25°C) Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle Value 25°C Symbol VDSS VGSS ID(pulse)* Pch* Tstg Ratings +150 Unit 2SK971 Electrical Characteristics 25°C) Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) 0.055 0.075 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note Pulse test |yfs| Ciss Coss Crss td(on) td(off) 0.065 0.095 Unit diF/dt A/µs 3.75 Test conditions ±100 Zero gate voltage drain current IDSS Gate source cutoff voltage Static drain source state resistance 2SK971 Power Temperature Derating Channel Dissipation Maximum Safe Operation Area Drain Current 25°C Case Temperature (°C) Drain Source Voltage Typical Output Characteristics Typical Transfer Characteristics Pulse Test Pulse Test Drain Current Drain Current 75°C -25°C 25°C Drain Source Voltage Gate Source Voltage 2SK971 Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance Drain Current Static Drain Source State Resistance (on) Drain Source Saturation Voltage (on) Pulse Test 0.05 Pulse Test 0.02 0.01 0.005 Drain Current Gate Source Voltage Static Drain Source State Resistance Temperature Forward Transfer Admittance Drain Current Static Drain Source State Resistance (on) Pulse Test Forward Transfer Admittance 0.20 75°C Pulse Test -25°C 25°C 0.16 0.12 0.08 0.04 Case Temperature (°C) Drain Current 2SK971 Body Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time (ns) Typical Capacitance Drain Source Voltage 10000 1MHz di/dt A/µs, 25°C Pulse Test Capacitance (pF) 3000 1000 Ciss Coss Crss Reverse Drain Current Drain Source Voltage Dynamic Input Characteristics Drain Source Voltage Switching Characteristics Gate Source Voltage (off) Switching Time (ns) Gate Charge (nc) 2µs, duty (on) Drain Current 2SK971 Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test Source Drain Voltage Normalized Transient Thermal Impedance Normalized Transient Thermal Impedance Pulse Width 25°C 0.05 0.03 0.01 0.02 ch-c ch-c ch-c 3.13°C/W, 25°C Pulse Width Switching Time Test Circuit Monitor Vout Monitor D.U.T Wavewforms Vout (off) (on) 2SK971 Notice When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 further information write Hitachi America, Ltd. Semiconductor Div. 2000 Sierra Point Parkway Brisbane, 94005-1835 Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher D-85622 Feldkirchen Tel: 089-9 80-0 Fax: 089-9 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Other recent searchesROS-3350-219+ - ROS-3350-219+ ROS-3350-219+ Datasheet MU9C8248 - MU9C8248 MU9C8248 Datasheet AJT34L881X-0XX - AJT34L881X-0XX AJT34L881X-0XX Datasheet ADC0831 - ADC0831 ADC0831 Datasheet ADC0832 - ADC0832 ADC0832 Datasheet ADC0834 - ADC0834 ADC0834 Datasheet ADC0838 - ADC0838 ADC0838 Datasheet 2SC828 - 2SC828 2SC828 Datasheet 2SC828A - 2SC828A 2SC828A Datasheet 2SA1765 - 2SA1765 2SA1765 Datasheet
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