QUALITY SEMICONDUCTOR, INC. High-Performance CMOS Six-Channel SP4
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QS4A215Q1 PRELIMINARY
QUALITY SEMICONDUCTOR, INC.
High-Performance CMOS Six-Channel SP4T Mux/Demux
GENERAL DESCRIPTION
QS4A215Q1
On-resistance: rDS(on) Fast transition time: tTRAN Wide bandwidth: 700MHz (-3dB point) Crosstalk: -110dB 50KHz, -68dB 5MHz, -66dB 30MHz Off-isolation: -90dB 50KHz, -60dB 5MHz, -50dB 30MHz, Single supply used multiplexer demultiplexer compatible control inputs Ultra-low quiescent current: High-speed video signal switching/routing HDTV-quality video signal multiplexing Audio signal switching/routing Data acquisition systems Telecomm routing Switch between multiple video sources Token Ring transceivers High-speed networking
QS4A215Q1 high-performance CMOS Six-Channel multiplexer/demultiplexer with individual enables. on-resistance QS4A215Q1 allows inputs connected outputs with insertion loss high bandwidth. TTL-compatible control circuitry with "Break-Before-Make" feature prevents contention. QS4A215Q1 with 700MHz bandwidth makes ideal high-performance video signal switching, audio signal switching, telecomm routing applications. High performance power dissipation makes this device ideal battery operated remote instrumentation applications. QS4A215Q1 offered QVSOP package several advantages over conventional packages such PDIP SOIC including: Reduced signal delays denser component packaging circuit boards Reduced system noise less inductance resulting lower ground bounce
APPLICATIONS
Figure Functional Block Diagram
S0AB S1AB
CONTROL LOGIC
S0CD S1CD
CONTROL LOGIC
S0EF S1EF
CONTROL LOGIC
MDSA-00007-01 1998
QUALITY SEMICONDUCTOR, INC.
QS4A215Q1 PRELIMINARY Table Definitions
Name IxA-F S0xx,S1xx EA-F YA-F Description DEMUX Ports, Select Input Enable Inputs, Ports, S1AB S1CD S1EF
Figure Configuration
(All Pins View) QVSOP (Q1) S0AB S0CD S0EF
Table Function Table
Enable Select MUX/DEMUX Ports High-Z High-Z Function Disable Disable S1-0 S1-0 S1-0 S1-0
Note: This function table represents function block "AB." "CD" block nomenclature substitutes "D". "EF" block nomenclature substitutes "F".
Table Absolute Maximum Ratings
Supply Voltage Ground -0.5V +7.0V Switch Voltage -0.5V +7.0V Analog Input Voltage -0.5V +7.0V Input Voltage -0.5V +7.0V Input Voltage (for pulse width 20ns) -3.0V Output Current Max. Sink Current/Pin 120mA Maximum Power Dissipation watts TSTG Storage Temperature -65° +150°C
Note: ABSOLUTE MAXIMUM RATINGS those conditions beyond which damage device occur. Exposure these conditions beyond those indicated adversely affect device reliability. Functional operation under absolute maximum rating conditions implied.
QUALITY SEMICONDUCTOR, INC.
MDSA-00007-01 1998
QS4A215Q1 PRELIMINARY Table Electrical Characteristics Over Operating Range
Commercial: 70°C, 5.0V Symbol rDS(on) Parameter Analog Signal Range(2) Drain-source On-resistance(2,3) Min., 0.0V, 30mA Min., 2.4V, 15mA rDS(on) rDS(on) Matching Between Channels(4) Min., 0.0V, 30mA Min., 2.4V, 15mA (OFF) (ON) Channel Leakage Current Channel Leakage Current Input HIGH Voltage Input Voltage Each Channel Turned Sequentially Guaranteed Logic HIGH Control Pins Guaranteed Logic Control Pins 100pF (See Figure 100pF (See Figure 100pF (See Figure 100pF 1Vp-p, 1Vp-p, 5MHz 1Vp-p, 5MHz VCC, VOUT VCC, VOUT VOUT VOUT 1000pF Test Conditions -0.5 Typ(1) Unit
Analog Switch
Digital Control
Dynamic Characteristics
tTRANS tON(EN) Switching Time Enable Turn-on Time Enable Turn-off Time Group Delay(2,5) -3dB Bandwidth Off-isolation XTALK CMux(off) CMux(on) Crosstalk Capacitance Capacitance Charge Injection
tOFF(EN) f3dB
CDemux(off) DEMUX Capacitance CDemux(off) Capacitance
Notes: Typical values indicate 5.0V 25°C. Guaranteed design, subject production test. Measured voltage drop between pins indicated current through switch. On-resistance determined lower voltages (I,Y) pins. rDS(on) compares on-resistance specified Values. switch contributes propagation delay other than delay on-resistance switch load capacitance. Propagation delay switch, when used system, determined driving circuit driving side switch interaction with load driven side.
MDSA-00007-01 1998
QUALITY SEMICONDUCTOR, INC.
QS4A215Q1 PRELIMINARY Table Power Supply Characteristics
Symbol ICCQ Parameter Quiescent Power Test Conditions(1) Max., VCC, Unit
TYPICAL CHARACTERISTICS Figure Off-isolation Crosstalk Frequency
-150 -120
(dB)
Figure Off-isolation Crosstalk Frequency
Crosstalk
Off-isolation
Off-isolation
Crosstalk
(dB)
100K 100M Frequency (Hz)
100M 200M 300M 400M 500M 600M 700M Frequency (Hz)
QUALITY SEMICONDUCTOR, INC.
MDSA-00007-01 1998
QS4A215Q1 PRELIMINARY TYPICAL CHARACTERISTICS (continued) Figure Off-isolation Crosstalk Frequency
-160 -140 -120 Crosstalk
Figure Insertion Loss Frequency
(dB)
(dB)
-100 Off-isolation
Frequency (Hz)
100K 100M Frequency (Hz)
Figure Insertion Loss Frequency
Figure On-Resistance
rDS(On)-Drain Source On-resistance
4.75V (Volts)
(dB)
100M 200M 300M 400M 500M 600M 700M Frequency (Hz)
MDSA-00007-01 1998
QUALITY SEMICONDUCTOR, INC.
QS4A215Q1 PRELIMINARY TEST CIRCUITS Figure Transition Time
3.0V 50pF VOUT SWITCH OUTPUT 1.5V QS4A215Q1 I0B-I3B I0A-I2A SELECT INPUT 1.5V
tTRANS
tTRANS
Figure Enable Switching Time
CONTROL INPUT
QS4A215Q1
I1A-I3A I0B-I3B
tON(EN) tOFF(EN)
3.0V 1.5V 0.3V 0.3V
OUTPUT VOUT OUTPUT 50pF
Figure Insertion Loss
QS4A215Q1
Note: Insertion Loss VO/VS
QUALITY SEMICONDUCTOR, INC.
MDSA-00007-01 1998
QS4A215Q1 PRELIMINARY TEST CIRCUITS (continued) Figure Crosstalk
QS4A215Q1
Note: Crosstalk VO/VS
Figure Off-isolation
QS4A215Q1
Note: Off-isolation VO/VS
MDSA-00007-01 1998
QUALITY SEMICONDUCTOR, INC.
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