QUALITY SEMICONDUCTOR, INC. High-Performance CMOS Two-Channel SP4
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QS4A210Q PRELIMINARY
QUALITY SEMICONDUCTOR, INC.
High-Performance CMOS Two-Channel SP4T Mux/Demux
GENERAL DESCRIPTION
QS4A210
On-resistance: rDS(on) Fast transition time: tTRAN Wide bandwidth: 700MHz (-3dB point) Crosstalk: -110dB 50KHz, -68dB 5MHz, -66dB 30MHz Off-isolation: -90dB 50KHz, -60dB 5MHz, -50dB 30MHz, Single supply used multiplexer demultiplexer compatible control inputs Ultra-low quiescent current: High-speed video signal switching/routing HDTV-quality video signal multiplexing Audio signal switching/routing Data acquisition systems Telecom routing Switch between multiple video sources Token Ring transceivers High-speed networking
QS4A210Q high-performance CMOS TwoChannel SP4T multiplexer/demultiplexer with individual enables. on-resistance QS4A210Q allows inputs connected outputs with insertion loss high bandwidth. TTLcompatible control circuitry with "Break-Before-Make" feature prevents contention. QS4A210Q with 700MHz bandwidth makes ideal high-performance video signal switching, audio signal switching, telecom routing applications. power dissipation makes this device ideal battery operated remote instrumentation applications. QS4A210Q offered QSOP package which several advantages over conventional packages such PDIP SOIC including: Reduced signal delays denser component packaging circuit boards Reduced system noise less inductance resulting lower ground bounce
APPLICATIONS
Figure Functional Block Diagram
CONTROL LOGIC
MDSA-00006-01 1998
QUALITY SEMICONDUCTOR, INC.
QS4A210Q PRELIMINARY Figure Configuration
(All Pins View) QSOP
Table Definitions
Name Description Demux Port Demux Port Enable Inputs Select Inputs Port
Table Function Table
Enable Select Mux/Demux Ports High-Z High-Z Function Disable Disable S1-0 S1-0 S1-0 S1-0
Table Absolute Maximum Ratings
Supply Voltage Ground -0.5V +7.0V Switch Voltage -0.5V +7.0V Analog Input Voltage -0.5V +7.0V Input Voltage -0.5V +7.0V Input Voltage (for pulse width 20ns) -3.0V Output Current Max. Sink Current/Pin 120mA Maximum Power Dissipation. watts TSTG Storage Temperature -65° +150°C
Note: ABSOLUTE MAXIMUM RATINGS those conditions beyond which damage device occur. Exposure these conditions beyond those indicated adversely affect device reliability. Functional operation under absolute maximum rating conditions implied.
QUALITY SEMICONDUCTOR, INC.
MDSA-00006-01 1998
QS4A210Q PRELIMINARY Table Electrical Characteristics Over Operating Range
Commercial: 70°C, 5.0V Symbol rDS(on) Parameter Analog Signal Range(2) Drain-source On-resistance(2,3) Min., 0.0V, 30mA Min., 2.4V, 15mA rDS(on) rDS(on) Matching Between Channels(4) Min., 0.0V, 30mA Min., 2.4V, 15mA (OFF) (ON) Channel Leakage Current Channel Leakage Current Input HIGH Voltage Input Voltage Each Channel Turned Sequentially Guaranteed Logic HIGH Control Pins Guaranteed Logic Control Pins 100pF (See Figure 100pF (See Figure 100pF (See Figure 100pF 1Vp-p, 1Vp-p, 5.5MHz 1Vp-p, 5.5MHz VCC, VOUT VCC, VOUT VOUT VOUT Test Conditions -0.5 Typ(1) VCC-1 Unit
Analog Switch
Digital Control
Dynamic Characteristics
tTRANS tON(EN) Switching Time Enable Turn-on Time Enable Turn-off Time Group Delay(2,5) -3dB Bandwidth Off-isolation XTALK CMux(off) CMux(on) Crosstalk Capacitance Capacitance Charge Injection
tOFF(EN) f3dB
CDemux(off) Demux Capacitance CDemux(on) Capacitance
Notes: Typical values indicate 5.0V 25°C. Guaranteed design, subject production test. Measured voltage drop between pins indicated current through switch. On-resistance determined lower voltages (I,Y) pins. rDS(on) compares on-resistance specified Values. switch contributes group delay other than delay on-resistance switch load capacitance. Group delay switch, when used system, determined driving circuit driving side switch interaction with load driven side.
MDSA-00006-01 1998
QUALITY SEMICONDUCTOR, INC.
QS4A210Q PRELIMINARY Table Power Supply Characteristics
Symbol ICCQ Parameter Quiescent Power Test Conditions(1) Max., VCC, Unit
TYPICAL CHARACTERISTICS Figure Off-isolation Crosstalk Frequency Figure Off-isolation Crosstalk Frequency
-150 -120 100K 100M Frequency (Hz) Off-isolation Crosstalk
(dB)
Crosstalk
Off-isolation
(dB)
100M 200M 300M 400M 500M 600M 700M Frequency (Hz)
QUALITY SEMICONDUCTOR, INC.
MDSA-00006-01 1998
QS4A210Q PRELIMINARY TYPICAL CHARACTERISTICS (continued) Figure Off-isolation Crosstalk Frequency
-160 -140 -120 Crosstalk
Figure Insertion Loss Frequency
(dB)
(dB)
-100 Off-isolation
Frequency (Hz)
100M 200M 300M 400M 500M 600M 700M Frequency (Hz)
Figure Insertion Loss Frequency
Figure On-resistance
rDS(On)-Drain Source On-resistance
(dB)
(Volts) 4.75V
100K 100M Frequency (Hz)
MDSA-00006-01 1998
QUALITY SEMICONDUCTOR, INC.
QS4A210Q PRELIMINARY TEST CIRCUITS Figure Transition Time
3.0V 50pF VOUT SWITCH OUTPUT 1.5V QS4A210Q I0B-I3B I0A-I2A SELECT INPUT 1.5V
tTRANS
tTRANS
Figure Enable Switching Time
CONTROL INPUT I1A-I3A QS4A210Q I0B-I3B OUTPUT VOUT OUTPUT tOFF(EN)
tON(EN)
3.0V 1.5V 0.3V 0.3V
50pF
Figure Insertion Loss
QS4A210Q
Note: Insertion Loss VO/VS
QUALITY SEMICONDUCTOR, INC.
MDSA-00006-01 1998
QS4A210Q PRELIMINARY TEST CIRCUITS (continued) Figure Crosstalk
QS4A210Q
Note: Crosstalk VO/VS
Figure Off-isolation
QS4A210
Note: Off-isolation VO/VS
MDSA-00006-01 1998
QUALITY SEMICONDUCTOR, INC.
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