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Silicon triple diffusion planar type Darlington 7.5±0.2 High
Top Searches for this datasheet2SD1275, 2SD1275A Silicon triple diffusion planar type Darlington 7.5±0.2 High forward current transfer ratio High-speed switching Full-pack package which installed heat sink with screw 16.7±0.3 Features 3.1±0.1 4.2±0.2 power amplification Complementary 2SB0949 2SB0949A 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 14.0±0.5 Absolute Maximum Ratings 25°C Parameter Collector base voltage Collector emitter voltage 2SD1275 2SD1275A 2SD1275 2SD1275A VEBO 25°C 25°C Tstg VCEO Symbol VCBO Rating +150 Unit Solder (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 -0.1 0.8±0.1 2.54±0.3 5.08±0.5 Emitter base voltage Peak collector current Collector current Collector power dissipation Emitter Collector Base EIAJ: SC-67 TO-220F-A1 Package Internal Connection Junction temperature Storage temperature Electrical Characteristics 25°C Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1275 2SD1275A hFE1 hFE2 Base emitter voltage Collector emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) Rank classification Rank hFE2 VCE(sat) tstg 2SD1275 2SD1275A 2SD1275 2SD1275A IEBO VCEO ICEO Symbol ICBO Conditions Unit Forward current transfer ratio 2SD1275, 2SD1275A TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C VCE=4V Collector power dissipation Collector current Collector current IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 25°C TC=100°C -25°C Ambient temperature (°C) Collector emitter voltage Base emitter voltage VCE(sat) Collector emitter saturation voltage VCE(sat) IC/IB=250 0.03 0.01 0.01 0.03 TC=-25°C 100°C 25°C 10000 Collector output capacitance (pF) VCE=4V IE=0 f=1MHz TC=25°C Forward current transfer ratio 3000 1000 TC=100°C 25°C -25°C 0.01 0.03 Collector current Collector current Collector base voltage Area safe operation (ASO) repetitive pulse TC=25°C Rth(t) Without heat sink With heat sink Thermal resistance Rth(t) (°C/W) Collector current 0.03 0.01 t=10ms 2SD1275A 2SD1275 10-1 1000 10-2 10-4 10-3 10-2 10-1 Collector emitter voltage Time Request your special attention precautions using technical information semiconductors described this material export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). 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