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Silicon epitaxial planar type power switching Complementary 2SB09
Top Searches for this datasheet2SD1270 Silicon epitaxial planar type power switching Complementary 2SB0945 (2SB945) Unit: 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 3.1±0.1 1.4±0.1 1.3±0.2 +0.2 -0.1 0.8±0.1 2.54±0.25 5.08±0.5 4.2±0.2 Features collector emitter saturation voltage VCE(sat) Satisfactory linearity foward current transfer ratio Large collector current Full-pack package which installed heat sink with screw 16.7±0.3 14.0±0.5 Parameter Collector base voltage Collector emitter voltage Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg Ratings +150 Unit Solder Absolute Maximum Ratings (TC=25°C) 7.5±0.2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector emitter voltage Forward current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25°C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) tstg Conditions 100V, 10mA, 0.1A 0.2A 0.2A 10V, 0.5A, 10MHz 0.2A, 0.2A, 0.15 Unit Rank classification Rank hFE2 Note: Ordering made common rank rank 260) rank classification. Note.) Part number Parenthesis shows conventional part number. TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C IB=100mA 70mA 50mA 40mA 30mA 20mA 10mA 2SD1270 Collector emitter saturation voltage VCE(sat) IC/IB=20 TC=100°C 0.03 0.01 0.01 0.03 25°C -25°C VCE(sat) Collector power dissipation Collector current Ambient temperature (°C) Collector emitter voltage Collector current VBE(sat) 10000 IC/IB=20 0.03 0.01 0.01 0.03 TC=-25°C 100°C 25°C 10000 VCE=2V 3000 1000 0.01 0.03 VCE=10V f=10MHz TC=25°C Base emitter saturation voltage VBE(sat) Forward current transfer ratio 1000 =100°C 0.01 0.03 25°C -25°C Transition frequency (MHz) 3000 Collector current Collector current Collector current 10000 IE=0 f=1MHz TC=25°C ton, tstg, Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25°C Area safe operation (ASO) repetitive pulse TC=25°C 0.03 0.01 10ms t=0.5ms Collector output capacitance (pF) 3000 1000 Switching time ton,tstg,tf (µs) 0.03 0.01 Collector current tstg 1000 Collector base voltage Collector current Collector emitter voltage Rth(t) Without heat sink With heat sink 2SD1270 Thermal resistance Rth(t) (°C/W) 10-1 10-2 10-4 10-3 10-2 10-1 Time Request your special attention precautions using technical information semiconductors described this material export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). 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