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7.5±0.2 Features High collector emitter voltage VCEO Large c
Top Searches for this datasheet2SD1264, 2SD1264A 7.5±0.2 Features High collector emitter voltage VCEO Large collector power dissipation Full-pack package which installed heat sink with screw 16.7±0.3 3.1±0.1 4.2±0.2 low-freauency power amplification vertical deflection output Complementary 2SB0940 2SB0940A 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 Solder (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 -0.1 14.0±0.5 0.8±0.1 2.54±0.3 Absolute Maximum Ratings 25°C Parameter Collector base voltage Collector emitter voltage 2SD1264 2SD1264A VEBO 25°C 25°C Tstg Symbol VCBO VCEO Rating +150 Unit 5.08±0.5 Base Collector Emitter EIAJ: SC-67 TO-220F-A1 Package Emitter base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Electrical Characteristics 25°C Parameter Collector cutoff current Emitter cutoff current Collector base voltage Collector emitter voltage Emitter base voltage Forward current transfer ratio 2SD1264 2SD1264A VEBO hFE1 Symbol ICBO IEBO VCBO VCEO Conditions Unit hFE2 Base emitter voltage Collector emitter saturation voltage Transition frequency Note) Rank classification Rank hFE1 VCE(sat) 2SD1264, 2SD1264A TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C IB=7mA Collector power dissipation 25°C TC=100°C -25°C Collector current Collector current Ambient temperature (°C) Collector emitter voltage Base emitter voltage VCE(sat) Collector emitter saturation voltage VCE(sat) IC/IB=10 10000 1000 VCE=10V 0.01 0.03 VCE=5V f=1MHz TC=25°C Forward current transfer ratio 1000 -25°C 0.01 0.03 TC=100°C 25°C TC=100°C 25°C -25°C 0.03 0.01 0.01 0.03 Transition frequency (MHz) 3000 Collector current Collector current Collector current Area safe operation (ASO) 0.03 0.01 0.003 0.001 repetitive pulse TC=25°C Rth(t) Without heat sink With heat sink Thermal resistance Rth(t) (°C/W) Collector current t=0.5ms 2SD1264A 2SD1264 10-1 1000 10-2 10-4 10-3 10-2 10-1 Collector emitter voltage Time Request your special attention precautions using technical information semiconductors described this material export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). 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