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power amplification with high forward current transfer ratio 10.0
Top Searches for this datasheet2SD1259, 2SD1259A power amplification with high forward current transfer ratio 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: 1.0±0.1 Features High foward current transfer ratio Satisfactory linearity foward current transfer ratio type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment. (TC=25°C) Ratings +150 Unit 1.5±0.1 1.5max. 1.1max. 10.5min. 0.8±0.1 0.5max. 2.54±0.3 Absolute Maximum Ratings Parameter Collector base voltage Collector 2SD1259 2SD1259A 2SD1259 Symbol VCBO VCEO VEBO Ta=25°C Tstg 5.08±0.5 1:Base 2:Collector 3:Emitter Type Package Unit: 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 1.5-0.4 Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature 3.0-0.2 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 max. 5.08±0.5 1:Base 2:Collector 3:Emitter Type Package (DS) Electrical Characteristics Parameter Collector cutoff current 2SD1259 2SD1259A (TC=25°C) Symbol ICES ICEO IEBO Conditions 80V, 100V, 40V, 25mA, 0.5A 0.05A 12V, 0.2A, 10MHz 2500 Unit Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1259 2SD1259A VCEO hFE* VCE(sat) Forward current transfer ratio Collector emitter saturation voltage Transition frequency Rank classification 1000 1500 1200 2500 Rank Note: Ordering made common rank rank 1500) rank classification. 4.4±0.5 14.7±0.5 Emitter base voltage 10.0±0.3 emitter voltage 2SD1259A +0.4 TC=Ta With heat sink Without heat sink (PC=1.3W) IB=1.2mA 1.0mA TC=25°C 2SD1259, 2SD1259A Collector power dissipation Collector current 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA Collector current 25°C TC=100°C -25°C Ambient temperature (°C) Collector emitter voltage Base emitter voltage VCE(sat) Collector emitter saturation voltage VCE(sat) IC/IB=40 0.03 0.01 0.01 0.03 TC=100°C 25°C -25°C 10000 10000 VCE=4V 3000 1000 0.01 0.03 VCE=12V f=10MHz TC=25°C Forward current transfer ratio 1000 -25°C 25°C 0.01 0.03 Transition frequency (MHz) 3000 TC=100°C Collector current Collector current Collector current Area safe operation (ASO) repetitive pulse TC=25°C Rth(t) Without heat sink With heat sink Thermal resistance Rth(t) (°C/W) Collector current 0.03 0.01 t=1ms 10ms 300ms 2SD1259A 2SD1259 10-1 1000 10-2 10-4 10-3 10-2 10-1 Collector emitter voltage Time Request your special attention precautions using technical information semiconductors described this material export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). 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