Silicon epitaxial planar type power switching Complementary 2SB09

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Silicon epitaxial planar type power switching Complementary 2SB09

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2SD1257, 2SD1257A
Silicon epitaxial planar type
power switching Complementary 2SB0934 (2SB934)
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit:
1.0±0.1
Features
collector emitter saturation voltage VCE(sat) Satisfactory linearity foward current transfer ratio Large collector current type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment. (TC=25°C)
Ratings +150 Unit
1.5±0.1
1.5max.
1.1max.
10.5min.
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5
Absolute Maximum Ratings
Parameter Collector base voltage Collector 2SD1257 2SD1257A 2SD1257 Symbol VCBO VCEO VEBO Tstg
1:Base 2:Collector 3:Emitter Type Package Unit:
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
10.0±0.3
emitter voltage 2SD1257A Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
1.5-0.4
3.0-0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 max.
5.08±0.5
1:Base 2:Collector 3:Emitter Type Package (DS)
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1257 2SD1257A
(TC=25°C)
Symbol ICBO IEBO VCEO hFE1 hFE2
Conditions 100V, 10mA, 0.1A 0.25A 0.25A 10V, 0.5A, 10MHz 0.3A, 0.3A,
4.4±0.5
Unit
Forward current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
VCE(sat) VBE(sat) tstg
Rank classification
Note)The part numbers parenthesis show conventional part number.
Rank hFE2
14.7±0.5
+0.4
TC=Ta With heat sink Without heat sink (PC=1.3W) TC=25°C
2SD1257, 2SD1257A
Collector emitter saturation voltage VCE(sat)
VCE(sat)
IC/IB=10 IC/IB=20 TC=25°C
Collector power dissipation
Collector current
IB=55mA 50mA 45mA 40mA 35mA 30mA 20mA 15mA 10mA
0.03
0.01 0.01
0.03
Ambient temperature (°C)
Collector emitter voltage
Collector current
VCE(sat)
Collector emitter saturation voltage VCE(sat)
VBE(sat)
VBE(sat)
Base emitter saturation voltage VBE(sat)
IC/IB=20 0.03 0.01 0.01 0.03 TC=-25°C 100°C 25°C
Base emitter saturation voltage VBE(sat)
IC/IB=20 TC=100°C -25°C 0.03 0.01 0.01 0.03 25°C
IC/IB=10 IC/IB=20 TC=25°C
0.03
0.01
Collector current
Collector current
Collector current
10000 VCE=2V 10000 3000 1000 0.01 0.03
10000
Collector output capacitance (pF)
VCE=10V f=10MHz TC=25°C IE=0 f=1MHz TC=25°C
Forward current transfer ratio
1000
Transition frequency (MHz)
3000
3000 1000
TC=100°C 25°C -25°C 0.01 0.03
Collector current
Collector current
Collector base voltage
ton, tstg,
Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=-IB2) VCC=50V TC=25°C
2SD1257, 2SD1257A
Area safe operation (ASO)
repetitive pulse TC=25°C t=0.5ms
Switching time ton,tstg,tf (µs)
Collector current
0.03 0.01
0.03 0.01
10ms 300ms
tstg
2SD1257A
2SD1257
1000
Collector current
Collector emitter voltage
Rth(t)
Without heat sink With heat sink
Thermal resistance Rth(t) (°C/W)
10-1
10-2 10-4
10-3
10-2
10-1
Time
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice reasons modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, redundant design recommended, that such equipment violate relevant laws regulations because function products. When using products which packing required, observe conditions (including shelf life after-unpacking standby time) agreed upon when specification sheets individually exchanged. part this material reprinted reproduced means without written permission from company.
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2001

Silicon epitaxial planar type power switching Complementary 2SB09

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