FTT1010-M Frame Transfer Image Sensor Product specification File
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IMAGE SENSORS
FTT1010-M Frame Transfer Image Sensor
Product specification File under Image Sensors 1999 September
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Product specification
Frame Transfer Image Sensor
FTT1010-M
1-inch optical format active pixels (1024H 1024V) Progressive scan Excellent anti-blooming Variable electronic shuttering Square pixel structure binning 100% optical fill factor High dynamic range (>72dB) Description High sensitivity dark current fixed pattern noise read-out noise Data rate Mirrored split read-out
1010-M monochrome progressive-scan frame-transfer image sensor offering pixels frames second through single output buffer. combination high speed high linear dynamic range (>12 true bits room temperature without cooling) makes this device perfect solution high-end real time medical X-ray, scientific industrial applications. second output either used mirrored images, read simultaneously with other output double frame rate. device structure shown figure
Device structure
Optical size: Chip size: Pixel size: Active pixels: Total pixels: Optical black pixels: Timing pixels: Dummy register cells: Optical black lines: 12.288 12.288 14.572 26.508 1024 1024 1072 1030 Left: Right: Left: Right: Left: Right: Bottom: Top:
black lines Image Section
1024 active lines 2060 lines
1024 active pixels
Storage Section
Output amplifier
black lines 1072 cells Output register
Figure Device structure
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
Architecture FTT1010-M
FTT1010-M consists shielded storage section open image section. Both sections electronically same have same cell structure with same properties. only difference between sections optical light shield. optical centres pixels image section form square grid. charge generated integrated this section. Output registers located below storage section. output amplifiers used Frame Transfer mode should connected not-used amplifiers. After integration time charge collected image section shifted storage section. charge read line line through lower output register. left right half each output register controlled independently. This enables either single multiple read-out. During vertical transport gates separate pixels register. letters used define four quadrants sensor. central gates both registers part quadrants sensor. Both upper lower registers used vertical binning. Both registers also have summing gate each that used horizontal binning. Figure shows detailed internal structure.
IMAGE SECTION Image diagonal (active video only) Aspect ratio Active image width height Pixel width height Geometric fill factor Image clock pins Capacity each clock phase Number active lines Number black reference lines Number dummy black lines Total number lines Number active pixels line Number overscan (timing) pixels line Number black reference pixels line Total number pixels line 17.38 12.288 12.288 12x12 100% 2.5nF 1024 1030 1024 (2x4) (2x20) 1072
STORAGE SECTION Storage width height Cell width height Storage clock phases Capacity each clock phase Number cells line Number lines 12.864 12.360 12x12 2.5nF 1072 1030
OUTPUT REGISTERS Output buffers (three-stage source follower) Number registers Number dummy cells register Number register cells register Output register horizontal transport clock pins Capacity each C-clock phase Overlap capacity between neighbouring C-clocks Output register Summing Gates Capacity each Reset Gate clock phases Capacity each (one each corner) (one above, below) (2x7) 1072 60pF 20pF pins (SG) 15pF pins (RG) 15pF
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
dummy pixels
black timing columns
image pixels
black timing columns
dummy pixels
OUT_Z (not used)
OUT_Y (not used)
black lines
IMAGE
active images lines
Pixel
summing gate output gate reset gate reset drain
storage lines
STORAGE
black lines
OUT_W
OUT_X
column
column
column
column
clocks image section
clocks storage section Figure Detailed internal structure
clocks horizontal registers
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
Specifications
ABSOLUTE MAXIMUM RATINGS1 GENERAL: storage temperature ambient temperature during operation voltage between gates current through clock phase (absolute value) current short circuit protection) VOLTAGES RELATION VPS: VNS, SFD, VCS, other pins VOLTAGES RELATION VNS: SFD, VCS, SFS, other pins -0.2 -0.5 MIN. +2.0 +0.5 +0.5 +0.5 MAX. UNIT
CONDITIONS2
MIN.
TYPICAL 15.5
MAX.
MAX. [mA]
substrate substrate Source Follower Drain Source Follower Source Current Source Output Gate Reset Drain
CLOCK LEVEL CONDITIONS2 IMAGE CLOCKS: A-clock amplitude during integration hold A-clock amplitude during vertical transport (duty cycle=5/8)4 A-clock level Charge Reset (CR) level A-clock STORAGE CLOCKS: B-clock amplitude during hold B-clock amplitude during vertical transport (duty cycle=5/8) OUTPUT REGISTER CLOCKS: C-clock amplitude (duty cycle during hor. transport 3/6) C-clock level Summing Gate (SG) amplitude Summing Gate (SG) level OTHER CLOCKS: Reset Gate (RG) amplitude Reset Gate (RG) level Charge Reset (CR) pulse Nsub
MIN.
TYPICAL
MAX.
UNIT
4.75
5.25
During Charge Reset allowed exceed maximum rating levels (see note5). voltages relation SFS. voltage optimal Vertical Anti-Blooming (VAB), should adjustable between minimum maximum values. Three-level clock preferred maximum charge; swing during vertical transport should higher than voltage during integration. level clock (typically 10V) used lower maximum charge handling capacity allowed. Charge Reset achieved ways: typical level applied image clocks simultaneously (preferred). typical A-clock level applied image clocks; proper additional Charge Reset pulse required. This will also affect charge handling capacity storage areas.
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
Timing diagrams (for default operation)
CHARACTERISTICS Horizontal frequency (1/Tp) Vertical frequency Charge Reset (CR) time Rise fall times: image clocks storage clocks register clocks summing gate (SG) reset gate (RG)
MIN.
TYPICAL
MAX. 1000
UNIT
clock period Duty cycle phase shift clocks degrees.
Line Timing
AHigh 105Tp 19Tp 25Tp 14Tp 15Tp 24Tp 34Tp 15Tp 15Tp
30Tp
141Tp
Pixel Timing
1079 pixels
clock period 18MHz 55.56ns Pixel output sequence: dummy, black, timing, 1024 active, timing, black During AHigh phiA high level increased from
Line Time: 1184 65.7µs
Frame pulse Charge Reset BLC: Black Level Clamp Vertical storage clocks
Horizontal register clocks SSC: Start-Stop C-clocks Summing gate Reset gate
Figure Line pixel timing diagrams
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
Frame Timing
Sensor Output Ahigh EXT. SHUTTER
1019 1020 1021 1022 1023 1024
Black
Frame Shift
Integration Time
Frame Shift Timing
Tframe shift 1027 clock periods
phases correspond with line shifts Horizontal freq. Vertical freq. example: 18MHz 450kHz
Frame pulse Charge Reset BLC: Black Level Clamp Vertical image clocks
Vertical storage clocks Horizontal register clocks SSC: Start-Stop C-clocks Summing gate Reset gate Figure Frame timing diagrams
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
Line timing
time Div. (B1, B4); (SSC)
Figure Vertical readout
Pixel timing
time Div. (C1, C3); (SG,
Figure Start horizontal readout
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
Performance
test conditions performance characteristics follows: values measured using typical operating conditions. adjusted possible while maintaining proper Vertical Anti-Blooming. Sensor temperature 60°C (333K). Horizontal transport frequency 18MHz. Vertical transport frequency 450kHz (unless specified otherwise). Integration time 10ms (unless specified otherwise). light source 3200K lamp with neutral density filters 1.7mm thick BG40 infrared cut-off filter. Linear Operation measurements, temperature conversion filter (Melles Griot type 03FCG261, -120 mired, thickness: 2.5mm) applied.
LINEAR OPERATION Linear dynamic range
MIN. 4200:1
TYPICAL
MAX.
UNIT
Charge Transfer Efficiency vertical Charge Transfer Efficiency horizontal Image Smear
0.999995 0.999999
Resolution (MTF) lp/mm Responsivity Quantum efficiency White Shading Random Non-Uniformity (RNU)
required good Vertical Anti-Blooming (VAB) Power dissipation frames/s
Linear dynamic range defined ratio read-out noise (the latter reduced Correlated Double Sampling). Charge Transfer Efficiency values tested evaluation expressed value gate transfer. Smear defined ratio vertical transport time integration time. indicates visible spot image height would become. White Shading defined ratio one- value pixel output distribution expressed percentage mean value output (low pass image). defined ratio one- value highpass image mean signal value nominal light.
Linear Dynamic Range
20,000 18,000 16,000 14,000
12,000 10,000 8,000 6,000 4,000 2,000 Hor. Frequency (MHz)
Figure Typical Linear dynamic range horizontal read-out frequency sensor temperature
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
Maximum Read-out Speed
Integration time (ms) outputs
Images/sec.
output
Figure Maximum number images/second versus integration time
Quantum Efficiency
Quantum efficiency
Wavelength (nm)
Figure Quantum efficiency versus wavelength
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
LINEAR/SATURATION Full-well capacity saturation level (Qmax) Full-well capacity shading (Qmax, shading) Full-well capacity linear operation (Qlin) Charge handling capacity Overexposure handling
MIN.
TYPICAL
MAX.
UNIT
kel. kel. kel. Qmax level
Qmax determined from lowpass filtered image. Qmax, shading maximum difference full-well charges pixels, relative Qmax. linear full-well capacity Qlin calculated from linearity test (see dynamic range). evaluation test guarantees linearity. Charge handling capacity largest charge packet that transported through register read-out through output buffer. Overexposure over entire area while maintaining good Vertical Anti-Blooming (VAB). tested measuring dark line.
Charge Handling Integration/Transport Voltage
10V/14V
Output Signal (kel.) 9V/13V
8V/12V
Exposure (arbitrary units)
Figure Charge handling versus integration/transport voltage
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
OUTPUT BUFFERS
MIN.
TYPICAL
MAX.
UNIT
Conversion factor Mutual conversion factor matching (ACF)1 Supply current Bandwidth Output impedance buffer (Rload 3.3k, Cload 2pF)
µV/el. µV/el.
Matching four outputs specified with respect reference measured operating point (Qlin/2).
DARK CONDITION
MIN.
TYPICAL
MAX.
UNIT pA/cm2 nA/cm2
Dark current level Dark current level Fixed Pattern Noise (FPN) readout noise 9MHz bandwidth after
one- value highpass image.
Dark Current
1000
Dark Current (pA/cm2)
Temp. (oC)
Figure Dark current versus temperature
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
Application information
Current handling purposes drain holes that generated during exposure sensor light. Free electrons either transported connection and, excessive (from overexposure), free electrons drained VNS. current should flow into connection sensor. During high overexposure total current 15mA through connections together expected. emitter follower circuit diagram (figure serves these current requirements.
drains superfluous electrons result overexposure. other words, only sinks current. During high overexposure total current 15mA through connections together expected. emitter follower circuit diagram meets these current requirements. clamp circuit, consisting diode electrolytic capacitor, enables addition Charge Reset (CR) pulse otherwise stable voltage. protect CCD, current resulting from this pulse should limited. This accomplished designing pulse generator with rather high output impedance. output buffer easily destroyed ESD. using this emitter follower, this danger suppressed; reintroduce this danger measuring directly output sensor with oscilloscope probe. Instead, measure output emitter follower. Slew rate limitation avoided avoiding toosmall quiescent current emitter follower; about 10mA should job. collector emitter follower should decoupled properly suppress Miller effect from base-collector capacitance. output load resistor 3.3k typically results bandwidth 110MHz. bandwidth enlarged about 130MHz using resistor 2.2k instead, which, however, also enlarges on-chip power dissipation.
Device protection output buffers FTT1010-M likely damaged rises above time. This danger most realistic during power-on power-off camera. voltage should always lower than voltage.
Never exceed maximum output current. This damage device permanently. maximum output current should limited 10mA. especially aware that output buffers these image sensors very sensitive damage. Because fact that CCDs built n-type substrate, dealing with some parasitic transistors. avoid activation these transistors during switch-on switch-off camera, recommend application diagram figure
Decoupling voltages voltages (not VNS, which additional pulses described above) should decoupled with 100nF decoupling capacitor. This capacitor must mounted close possible sensor pin. Further noise reduction bandwidth limiting) achieved resistors connections between sensor voltage supplies. electrons that build charge packets that will reach floating diffusions only small current, which will flow through VRD. Therefore large series resistor connection used. Outputs limit on-chip power dissipation, output buffers designed with open source outputs. Outputs used should therefore loaded with current source more simply with resistance GND. order prevent output (which typically output impedance about 400) from bandwidth limitation result capacitive loading, load output with emitter follower built from high-frequency transistor. Mount base this transistor close possible sensor keep connection between emitter next stage short.
Unused sections reduce power consumption following steps taken. Connect unused output register pins (C1.C3, unused pins zero Volts. More information Detailed application information provided application note AN01 entitled `Camera Electronics Image Sensor Family'.
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
Device Handling
image sensor device which destroyed electrostatic discharge (ESD). Therefore, device should handled with care. Always store device with short-circuiting clamps conductive foam. Always switch electric signals when inserting removing sensor into from camera (the protection image sensor process less effective than protection standard CMOS circuits). Being high quality optical device, important that cover glass remain undamaged. When handling sensor, fingercots. When cleaning glass recommend using ethanol possibly water). other liquids strongly discouraged: cleaning liquid evaporates quickly, rubbing likely cause damage. cover glass coating damaged other liquids. window carefully slowly. rubbing window cause electro-static charges scratches which destroy device.
VSFD pulse 850C 0.5-1mA 100nF BAT74 BAT74 100nF
keep short <10mm!
keep short! output preprocessing 10mA <7pF! 100nF
850C
3.3k
0.5-1mA
BAT74 Schottky!
0.5-1mA 860C
BAT74 Schottky!
Figure Application diagram protect FTT1010-M
100nF 100nF
100nF
100nF
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
configuration
FTT1010-M mounted Grid Array (PGA) package with pins 15x13 grid 40.00 40.00 mm2. position marked with gold package. clock phases quadrant internally connected clock phases connected
Symbol
Name substrate substrate substrate substrate substrate substrate Source Follower Drain Source Follower Source Current Source Output Gate Reset Drain Image Clock (Phase Image Clock (Phase Image Clock (Phase Image Clock (Phase Storage Clock (Phase Storage Clock (Phase Storage Clock (Phase Storage Clock (Phase Register Clock (Phase Register Clock (Phase Register Clock (Phase Summing Gate Reset Gate Output connected
IMAGE
STORAGE
FTT1010-M
Figure FTT1010-M configuration (top view)
1999 September
Product specification
Frame Transfer Image Sensor
FTT1010-M
Package information
cover glass chip 0.25 Chip bottom package 0.15
SENSOR CRYSTAL COVER GLASS
Chip cover glass 0.20
ZONE
Cover glass 0.05
Image sensor chip
0.33
0.40
VIEW INDEX MARK
0.15 0.40
0.10
COVER GLASS
1.27 0.15
(2.54)
STAND-OFF
0.46 0.05
4.57 0.15
center image area. Position 0.15 left edge package 0.10 bottom package Angle rotation: less than Sensor flatness: (P-V) Cover glass: Corning 7059 Thickness cover glass: 1.00 0.05 Refractive index: 1.53 Single sided coating inside (430-660 drawing units
BOTTOM VIEW
35.56 0.20
Figure Mechanical drawing package FTT1010-M
1999 September
30.48 0.20
sensors ordered using following codes:
FTT1010-M sensors
Description
FTT1010-M/TG FTT1010-M/EG FTT1010-M/IG FTT1010-M/HG
Quality Grade
Test grade Economy grade Industrial grade High grade
Order Code
9922 35031 9922 35051 9922 35021 9922 35011
contact Image Sensors division Philips Semiconductors following address: Philips Semiconductors Image Sensors Internal Postbox WAG-05 Prof. Holstlaan 5656 Eindhoven Netherlands phone
lmtb
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Philips reserves right change information contained herein without notice. information furnished Philips believed accurate. Philips Electronics N.V. 1999 9922 35011
Order codes
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