FTF3020-M Full Frame Image Sensor Product specification File unde

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IMAGE SENSORS
FTF3020-M Full Frame Image Sensor
Product specification File under Image Sensors 1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
35mm film compatible image format mm2) active pixels (3072H 2048V) Progressive scan Excellent anti-blooming Variable electronic shuttering Square pixel structure binning 100% optical fill factor High linear dynamic range (>72dB) High sensitivity dark current fixed-pattern noise read-out noise Data rate Mirrored, split four quadrant read-out Perfectly matched visual spectrum
Description
FTF3020-M full frame monochrome image sensor designed professional digital photography applications, with very dark current linear dynamic range over true bits room temperature. four low-noise output amplifiers, each corner chip, make FTF3020-M suitable wide range high-end visual light applications. With output amplifier, progressively scanned image read frames second. using multiple outputs frame rate increases accordingly. device structure shown figure
Device structure
black lines
Optical size: Chip size: Pixel size: Active pixels: Total pixels: Optical black pixels: Timing pixels: Dummy register cells: Optical black lines:
36.864 24.576 39.148 26.508 3072 2048 3120 2060 Left: Right: Left: Right: Left: Right: Bottom: Top:
2048
2060 lines
Image Area
active lines
3072 active pixels
black lines
Output amplifier
3120 cells Output register 3134 cells
Figure Device structure
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
Architecture FTF3020-M
optical centres pixels image section form square grid. charge generated integrated this section. Output registers located below above image section readout. After integration time, image charge shifted line time either upper lower register both simultaneously, depending read-out mode. left right half each register controlled independently. This enables either single multiple read-out. During vertical transport, gates separate pixels register. central gates lower upper registers part left half sensor quadrants respectively). Each register used vertical binning. Each register contains summing gate both ends that used horizontal binning (see figure
IMAGE SECTION Image diagonal (active video only) Aspect ratio Active image width height Pixel width height Geometric fill factor Image clock pins Capacity each clock phase Number active lines Number black reference lines Number dummy black lines Total number lines Number active pixels line Number overscan (timing) pixels line Number black reference pixels line Total number pixels line 44.30 36.864 24.576 12x12 100% pins (A1.A4) 7.5nF 2048 (=2x2) (=2x4) 2060 3072 (2x4) (2x20) 3120
OUTPUT REGISTERS Output buffers each corner Number registers Number dummy cells register Number register cells register Output register horizontal transport clock pins Capacity each C-clock phase Overlap capacity between neighbouring C-clocks Output register Summing Gates Capacity each Reset Gate clock phases Capacity each Three-stage source follower (2x7) 3134 (3120+14) pins register (C1.C3) 40pF pins (SG) 15pF pins (RG) 15pF
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
dummy pixels
black timing columns
image pixels
black timing columns
dummy pixels
OUT_Z
OUT_Y
black lines
Pixel
active images lines
IMAGE
summing gate output gate reset gate reset drain
black lines
OUT_W
OUT_X
column
column
column
column
clocks image section
clocks horizontal registers
Figure Detailed internal structure
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
Specifications
ABSOLUTE MAXIMUM RATINGS1 GENERAL: storage temperature ambient temperature during operation voltage between gates current through clock phase (absolute value) current short circuit protection) VOLTAGES RELATION VPS: VNS, SFD, VCS, other pins VOLTAGES RELATION VNS: SFD, VCS, SFS, other pins MIN. MAX. UNIT
-0.2
+2.0
-0.5
+0.5 +0.5 +0.5
CONDITIONS2 VNS3 substrate substrate Source Follower Drain Source Follower Source Current Source Output Gate Reset Drain
MIN.
TYPICAL 15.5
MAX.
MAX. [mA]
CLOCK LEVEL CONDITIONS2 IMAGE CLOCKS: A-clock amplitude during integration hold A-clock amplitude during vertical transport (duty cycle=5/8) A-clock level Charge Reset (CR) level A-clock OUTPUT REGISTER CLOCKS: C-clock amplitude (duty cycle during hor. transport 3/6) C-clock level Summing Gate (SG) amplitude Summing Gate (SG) level OTHER CLOCKS: Reset Gate (RG) amplitude Reset Gate (RG) level Charge Reset (CR) pulse Nsub
MIN.
TYPICAL
MAX.
UNIT
4.75
5.25
During Charge Reset allowed exceed maximum rating levels (see note voltages relation SFS. voltage optimal Vertical Anti-Blooming (VAB), should adjustable between minimum maximum values. Three-level clock preferred maximum charge; swing during vertical transport should higher than voltage during integration. level clock (typically 10V) used lower maximum charge handling capacity allowed. Charge Reset achieved ways: typical A-clock level applied image clocks; proper additional Charge Reset pulse required (preferred). typical level applied image clocks simultaneously.
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
Timing diagrams (for default operation)
CHARACTERISTICS Horizontal frequency (1/Tp) Vertical frequency Charge Reset (CR) time Rise fall times: image clocks register clocks summing gate (SG) reset gate (RG)
MIN.
TYPICAL 193.7
MAX.
UNIT
clock period Duty cycle phase shift clocks degrees.
Frame Timing
Sensor Output Ahigh* EXT. SHUTTER
Dummy
2046 2047 2048
Black
Integration Time
Line Timing
AHigh*
112Tp 204Tp
Pixel Timing
3127 pixels
18MHz 55.56ns Pixel output sequence: dummy, black, timing, 3072 active, timing, black Line Time: 3487 193.7µs During AHigh phiA high level increased from (This necessary during readout only)
Frame pulse Charge Reset BLC: Black Level Clamp Vertical image clocks
Horizontal register clocks SSC: Start-Stop C-clocks Summing gate Reset gate
Figure Timing diagrams
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
Line timing
time Div. (A1, (SSC)
Figure Vertical readout
Pixel timing
time Div. (C1, C3); (SG,
Figure Start horizontal readout
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
Performance
test conditions performance characteristics follows: values measured using typical operating conditions. adjusted possible while maintaining proper Vertical Anti-Blooming. Sensor temperature 60°C (333K). Horizontal transport frequency 18MHz. Vertical transport frequency 50kHz (unless specified otherwise). Integration time 10ms (unless specified otherwise). light source lamp 3200K conjunction with neutral density filters 1.7mm thick BG40 infrared cut-off filter. Linear Operation measurements, temperature conversion filter (Melles Griot type 03FCG261, -120 mired, thickness: 2.5mm) applied.
LINEAR OPERATION Linear dynamic range
MIN. 4200:1(12bit)
TYPICAL
MAX.
UNIT
Charge Transfer Efficiency vertical Charge Transfer Efficiency horizontal Image Resolution (MTF) lp/mm Responsivity Quantum efficiency Pass Shading
0.999995 0.999999
Random Non-Uniformity (RNU) required good Vertical Anti-Blooming (VAB) Power dissipation frames/s
Linear dynamic range defined ratio Qlin read-out noise (the latter reduced Correlated Double Sampling). Charge Transfer Efficiency values tested evaluation expressed value gate transfer. Pass Shading defined ratio one- value pixels blurred image (low-pass) mean signal value.
defined ratio one- value highpass image mean signal value nominal light.
Linear Dynamic Range
14,000 12,000 10,000
35°C 45°C 55°C
8,000 6,000 4,000 2,000
Hor. Frequency (MHz) Figure Typical Linear dynamic range horizontal read-out frequency sensor temperature
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
Maximum Read-out Speed
outputs
Images/sec.
outputs
output
Integration time (ms)
Figure Maximum number images/second versus integration time
Quantum Efficiency
Quantum efficiency
Wavelength (nm)
Figure Quantum efficiency versus wavelength
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
LINEAR/SATURATION Full-well capacity saturation level (Qmax Full-well capacity shading (Qmax, shading Full-well capacity linear operation (Qlin Charge handling capacity Overexposure handling
MIN.
TYPICAL
MAX.
UNIT
kel. kel. kel. Qmax level
Qmax determined from lowpass filtered image. Qmax, shading maximum difference full-well charges pixels, relative Qmax. linear full-well capacity Qlin calculated from linearity test (see dynamic range). evaluation test guarantees linearity. Charge handling capacity largest charge packet that transported through register read-out through output buffer. Overexposure over entire area while maintaining good Vertical Anti-Blooming (VAB). tested measuring dark line.
Charge Handling Integration/Transport Voltage
10V/14V
Output Signal (kel.) 9V/13V
8V/12V
Exposure (arbitrary units)
Figure Charge handling versus integration/transport voltage
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
OUTPUT BUFFERS
MIN.
TYPICAL
MAX.
UNIT
Conversion factor Mutual conversion factor matching (ACF)1 Supply current Bandwidth Output impedance buffer (Rload 3.3k, Cload 2pF)
µV/el. µV/el.
Matching four outputs specified with respect reference measured operating point (Qlin/2).
DARK CONDITION
MIN.
TYPICAL
MAX.
UNIT pA/cm2 nA/cm2
Dark current level Dark current level Fixed Pattern Noise (FPN) readout noise 9MHz bandwidth after
one- value highpass image.
Dark Current
1000
Dark Current (pA/cm2)
Temp. (oC)
Figure Dark current versus temperature
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
Application information
Current handling purposes drain holes that generated during exposure sensor light. Free electrons either transported connection and, excessive (from overexposure), free electrons drained VNS. current should flow into connection sensor. During high overexposure total current 15mA through connections together expected. emitter follower circuit diagram (figure serves these current requirements.
drains superfluous electrons result overexposure. other words, only sinks current. During high overexposure total current 15mA through connections together expected. emitter follower circuit diagram meets these current requirements. clamp circuit, consisting diode electrolytic capacitor, enables addition Charge Reset (CR) pulse otherwise stable voltage. protect CCD, current resulting from this pulse should limited. This accomplished designing pulse generator with rather high output impedance. emitter next stage short. output buffer easily destroyed ESD. using this emitter follower, this danger suppressed; reintroduce this danger measuring directly output sensor with oscilloscope probe. Instead, measure output emitter follower. Slew rate limitation avoided avoiding too-small quiescent current emitter follower; about 10mA should job. collector emitter follower should decoupled properly suppress Miller effect from base-collector capacitance. output load resistor 3.3k typically results bandwidth 110MHz. bandwidth enlarged about 130MHz using resistor 2.2k instead, which, however, also enlarges on-chip power dissipation.
Device protection output buffers FTF3020-M likely damaged rises above time. This danger most realistic during power-on power-off camera. voltage should always lower than voltage.
Never exceed maximum output current. This damage device permanently. maximum output current should limited 10mA. especially aware that output buffers these image sensors very sensitive damage. Because fact that CCDs built n-type substrate, dealing with some parasitic transistors. avoid activation these transistors during switch-on switch-off camera, recommend application diagram figure
Decoupling voltages voltages (not VNS, which additional pulses described above) should decoupled with 100nF decoupling capacitor. This capacitor must mounted close possible sensor pin. Further noise reduction bandwidth limiting) achieved resistors connections between sensor voltage supplies. electrons that build charge packets that will reach floating diffusions only small current, which will flow through VRD. Therefore large series resistor connection used. Outputs limit on-chip power dissipation, output buffers designed with open source outputs. Outputs used should therefore loaded with current source more simply with resistance GND. order prevent output (which typically output impedance about 400) from bandwidth limitation result capacitive loading, load output with emitter follower built from high-frequency transistor. Mount base this transistor close possible sensor keep connection between
Unused sections reduce power consumption following steps taken. Connect unused output register pins (C1.C3, unused pins zero Volts. More information Detailed application information provided application note AN01 entitled `Camera Electronics Image Sensor Family'.
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
Device Handling
image sensor device which destroyed electrostatic discharge (ESD). Therefore, device should handled with care. Always store device with short-circuiting clamps conductive foam. Always switch electric signals when inserting removing sensor into from camera (the protection image sensor process less effective than protection standard CMOS circuits). Being high quality optical device, important that cover glass remain undamaged. When handling sensor, fingercots. When cleaning glass recommend using ethanol possibly water). other liquids strongly discouraged: cleaning liquid evaporates quickly, rubbing likely cause damage. cover glass coating damaged other liquids. window carefully slowly. rubbing window cause electro-static charges scratches which destroy device.
VSFD pulse 850C 0.5-1mA 100nF BAT74 BAT74 100nF
keep short <10mm!
keep short! output preprocessing 10mA <7pF! 100nF
850C
3.3k
0.5-1mA
BAT74 Schottky!
0.5-1mA 860C
BAT74 Schottky!
Figure Application diagram protect FTF3020-M
100nF 100nF
100nF
100nF
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
configuration
FTF3020-M mounted Grid Array (PGA) package with pins 20x15 grid 52.70 40.00 mm2. position (quadrant marked with gold package. image clock phases quadrant internally connected connected
Symbol
Name substrate substrate substrate substrate substrate Source Follower Drain Source Follower Source Current Source Output Gate Reset Drain Image Clock (Phase Image Clock (Phase Image Clock (Phase Image Clock (Phase Register Clock (Phase Register Clock (Phase Register Clock (Phase Summing Gate Reset Gate Output Connected Connected Connected Connected
FTF3020-M
Figure FTF3020-M configuration (top view)
1999 November
Product specification
Full Frame Image Sensor
FTF3020-M
Package information
cover glass chip ±0.25 Chip bottom package ±0.15 SENSOR CRYSTAL COVER GLASS EPOXY GLUE Chip cover glass ±0.20 Cover glass ±0.05
±0.15
Image sensor chip
±0.40
INDEX MARK
26.35 ±0.15 52.7 ±0.53 1.27 0.15 4.57 ±0.15
COVER GLASS
STAND-OFF
(2.54) 0.46 ±0.05
center image area. Position 26.35 0.15 left edge package 20.00 0.15 upper edge package 0.15 bottom package
35.56 ±0.20
Angle rotation: less than Sensor flatness: (P-V) Cover glass: Corning 7059 Thickness cover glass: 0.05 Refractive index: 1.53 Double sided coating (430-660 reflection
BOTTOM VIEW
drawing units
48.26 ±0.27
Figure Mechanical drawing package FTF3020-M
1999 November
Order codes
Philips reserves right change information contained herein without notice. information furnished Philips believed accurate. Philips Electronics N.V. 1999 9922 31411
sensors ordered using following codes:
FTF3020-M sensors
Description FTF3020-M/TG FTF3020-M/EG FTF3020-M/IG FTF3020-M/HG Quality Grade Test grade Economy grade Industrial grade High grade Order Code 9922 31431 9922 31451 9922 31421 9922 31411
contact Image Sensors division Philips Semiconductors following address: Philips Semiconductors Image Sensors Internal Postbox WAG-05 Prof. Holstlaan 5656 Eindhoven Netherlands phone

FTF3020-M Full Frame Image Sensor Product specification File unde

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