Rev. October 2000 M3D088 Product specification Descript
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BSH108
Rev. October 2000
M3D088
Product specification
Description
N-channel enhancement mode field-effect transistor plastic package using TrenchMOSTM1 technology. Product availability: BSH108 SOT23.
Features
TrenchMOStechnology Very fast switching Logic level compatible Subminiature surface mount package.
Applications
Battery management High speed switch power converter.
Pinning information
Table Pinning SOT23, simplified outline symbol Description gate
Simplified outline
Symbol
source drain
view
MSB003 MBB076
SOT23
TrenchMOS trademark Royal Philips Electronics.
Philips Semiconductors
BSH108
Quick reference data
Table Ptot RDSon Quick reference data Conditions 0.83 Unit drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
Limiting values
Table Limiting values accordance with Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDGR Ptot Tstg drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current pulsed; Figure Figure pulsed; Figure Figure Conditions 0.83 +150 +150 0.83 Unit
Source-drain diode
9397 07652
Philips Electronics N.V. 2000. rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
03aa17
03aa25
Ider
(oC)
(oC)
100%
100%
Normalized total power dissipation function solder point temperature.
Normalized continuous drain current function solder point temperature.
03aa80
RDSon VDS/
10-1
10-2
D.C.
10-3 10-1
25oC
single pulse.
Safe operating area; continuous peak drain currents function drain-source voltage.
9397 07652
Philips Electronics N.V. 2000. rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
Thermal characteristics
Table Rth(j-sp) Rth(j-a) Thermal characteristics Conditions mounted printed circuit board; minimum footprint Value Unit thermal resistance from junction solder point mounted metal clad substrate; Figure thermal resistance from junction ambient Symbol Parameter
Transient thermal impedance
03aa79
Zth(j-sp) (K/W)
0.05 0.02
single pulse
10-1 10-5 10-4 10-3 10-2 10-1
Mounted metal clad substrate.
Transient thermal impedance from junction solder point function pulse duration.
9397 07652
Philips Electronics N.V. 2000. rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
Characteristics
Table Characteristics unless otherwise specified Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage VGS; Figure IDSS drain-source leakage current IGSS RDSon gate-source leakage current drain-source on-state resistance Figure Figure Dynamic characteristics Qg(tot) Ciss Coss Crss td(on) td(off) forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage 0.83 Figure reverse recovery time recovered charge dIS/dt -100 A/µs; MHz; Figure Figure Figure 0.01 Conditions Unit
Source-drain diode
9397 07652
Philips Electronics N.V. 2000. rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
03aa81
03aa83
RDSon
RDSon
Output characteristics: drain current function drain-source voltage; typical values.
RDSon 0.45 0.35 0.25 0.15 0.05
03aa82
Transfer characteristics: drain current function gate-source voltage; typical values.
03aa27
(oC)
DSon DSon
Drain-source on-state resistance function drain current; typical values.
Normalized drain-source on-state resistance factor function junction temperature.
9397 07652
Philips Electronics N.V. 2000. rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
GS(th)
03aa33
10-1
10-2
03aa36
10-3
10-4
10-5
(oC)
10-6
Gate-source threshold voltage function junction temperature.
03aa84
Sub-threshold drain current function gate-source voltage.
RDSon
Ciss, Coss, Crss (pF)
03aa86
Ciss
Coss
Crss
10-1
RDSon
Forward transconductance function drain current; typical values.
Input, output reverse transfer capacitances function drain-source voltage; typical values.
9397 07652
Philips Electronics N.V. 2000. rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
03aa85
03ab10
(nC)
Source (diode forward) current function source-drain (diode forward) voltage; typical values.
Gate-source voltage function gate charge; typical values.
9397 07652
Philips Electronics N.V. 2000. rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
Package outline
Plastic surface mounted package; leads SOT23
detail
scale
DIMENSIONS original dimensions) UNIT max. 0.48 0.38 0.15 0.09 0.95 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT23
REFERENCES JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
SOT23.
9397 07652 Philips Electronics N.V. 2000. rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
Revision history
Table Revision history CPCN Description Product specification; second version; supersedes Rev.01 20000906. Correction diode Table "Limiting values" 20000906 Product specification.
Date 20001025
9397 07652
Philips Electronics N.V. 2000. rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
Data sheet status
Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition This data sheet contains design target goal specifications product development. Specification change manner without notice. This data sheet contains preliminary data, supplementary data will published later date. Philips Semiconductors reserves right make changes time without notice order improve design supply best possible product. This data sheet contains final specifications. Philips Semiconductors reserves right make changes time without notice order improve design supply best possible product.
Product specification
Production
Please consult most recently issued data sheet before initiating completing design.
Definitions
Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification.
Disclaimers
Life support These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes, without notice, products, including circuits, standard cells, and/or software, described contained herein order improve design and/or performance. Philips Semiconductors assumes responsibility liability these products, conveys licence title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
9397 07652
Philips Electronics N.V. 2000 rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
Philips Semiconductors worldwide company
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other countries apply Philips Semiconductors, Marketing Communications, Building P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 4825
Internet:
(SCA70)
9397 07652
Philips Electronics N.V. 2000. rights reserved.
Product specification
Rev. October 2000
Philips Semiconductors
BSH108
Contents
Description Features Applications Pinning information Quick reference data Limiting values. Thermal characteristics. Transient thermal impedance Characteristics Package outline Revision history Data sheet status Definitions Disclaimers.
Philips Electronics N.V. 2000.
Printed Netherlands
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights. Date release: October 2000 Document order number: 9397 07652
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