Triacs logic level Passivated, sensitive gate triac plastic envel

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Triacs logic level Passivated, sensitive gate triac plastic envel

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Triacs logic level
Passivated, sensitive gate triac plastic envelope, intended general purpose bidirectional switching phase control applications. This device intended interfaced directly microcontrollers, logic integrated circuits other power gate trigger circuits.
BT137-600D
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137Repetitive peak off-state voltages on-state current Non-repetitive peak on-state current MAX. 600D UNIT
PINNING TO220AB
DESCRIPTION main terminal
CONFIGURATION
SYMBOL
main terminal gate main terminal
LIMITING VALUES
Limiting values accordance with Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages on-state current Non-repetitive peak on-state current fusing Repetitive rate rise on-state current after triggering full sine wave; full sine wave; prior surge 16.7 dIG/dt A/µs GT2- GT2- CONDITIONS MIN. MAX.
UNIT A/µs A/µs A/µs A/µs
dIT/dt
PG(AV) Tstg
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
over period
Although recommended, off-state voltages 800V applied without damage, triac switch on-state. rate rise current should exceed A/µs. June 2001 1.000
Triacs logic level
THERMAL RESISTANCES
SYMBOL j-mb PARAMETER CONDITIONS MIN.
BT137-600D
TYP.
MAX.
UNIT
Thermal resistance full cycle junction mounting base half cycle Thermal resistance free junction ambient
STATIC CHARACTERISTICS
unless otherwise stated SYMBOL PARAMETER Gate trigger current CONDITIONS GT2- GT2- GT2- GT2- MIN. 0.25 TYP. MAX. 1.65 UNIT
Latching current
Holding current On-state voltage Gate trigger voltage Off-state leakage current
VDRM(max);
DYNAMIC CHARACTERISTICS
unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate rise off-state voltage Gate controlled turn-on time CONDITIONS VDRM(max); exponential waveform; VDRM(max); dIG/dt A/µs MIN. TYP. MAX. UNIT V/µs
June 2001
1.000
Triacs logic level
BT137-600D
Ptot
Tmb(max)
IT(RMS)
BT137
IT(RMS)
Fig.1. Maximum on-state dissipation, Ptot, versus on-state current, IT(RMS), where conduction angle.
ITSM time initial
Fig.4. Maximum permissible current IT(RMS) versus mounting base temperature Tmb.
IT(RMS)
1000
limit
quadrant
10us
100us
10ms
100ms
0.01
surge duration
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width sinusoidal currents, 20ms.
ITSM ITSM time
Fig.5. Maximum permissible repetitive on-state current IT(RMS), versus surge duration, sinusoidal currents, 102°C.
VGT(Tj) VGT(25
initial
Number cycles 50Hz
1000
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number cycles, sinusoidal currents,
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25°C), versus junction temperature
June 2001
1.000
Triacs logic level
BT137-600D
IGT(Tj) IGT(25 GT2- GT2-
1.264 0.0378 Ohms
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25°C), versus junction temperature
IL(Tj) IL(25
Fig.10. Typical maximum on-state characteristic.
j-mb (K/W)
unidirectional bidirectional
0.01 10us 0.1ms 10ms
0.1s
Fig.8. Normalised latching current IL(Tj)/ IL(25°C), versus junction temperature
IH(Tj) IH(25C)
Fig.11. Transient thermal impedance j-mb, versus pulse width
dVD/dt (V/us)
1000
Fig.9. Normalised holding current IH(Tj)/ IH(25°C), versus junction temperature
Fig.12. Typical, critical rate rise off-state voltage, dVD/dt versus junction temperature
June 2001
1.000
Triacs logic level
MECHANICAL DATA
Dimensions Mass:
BT137-600D
10,3
15,8
tinned
13,5
(2x)
2,54 2,54
(3x)
Fig.13. SOT78 (TO220AB). connected mounting base. Notes Refer mounting instructions SOT78 (TO220) envelopes. Epoxy meets UL94 1/8".
June 2001
1.000
Triacs logic level
BT137-600D
DEFINITIONS
DATA SHEET STATUS DATA SHEET STATUS2 Objective data PRODUCT STATUS3 Development DEFINITIONS This data sheet contains data from objective specification product development. Philips Semiconductors reserves right change specification manner without notice This data sheet contains data from preliminary specification. Supplementary data will published later date. Philips Semiconductors reserves right change specification without notice, ordere improve design supply best possible product This data sheet contains data from product specification. Philips Semiconductors reserves right make changes time order improve design, manufacturing supply. Changes will communicated according Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A
Preliminary data
Qualification
Product data
Production
Limiting values Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections this specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. Philips Electronics N.V. 2001 rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent other industrial intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
Please consult most recently issued datasheet before initiating completing design. product status device(s) described this datasheet have changed since this datasheet published. latest information available Internet June 2001 1.000

Triacs logic level Passivated, sensitive gate triac plastic envel

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