Gallium Nitride (GaN) p-i-n photodiodes ultraviolet photodetectors tha

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Gallium Nitride (GaN) p-i-n photodiodes ultraviolet photodetectors tha

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p-i-n photodiodes Ultraviolet Photodetectors
Gallium Nitride (GaN) p-i-n photodiodes ultraviolet photodetectors that offer high quantum efficiency [typically nm], high speed 0.50 device] high responsivity wavelengths less than with high rejection response visible infrared wavelengths. Applications: Curing Drying Control Detection Phototherapy Control Spectroscopy Combustion Monitoring Solar Irradiance Measurement Sterilization Purification Control
Spectral Responsivity
TO-46 package
Performance Parameters: Active area Responsivity Responsivity Shunt resistance (-10 Series resistance Frequency response Junction capacitance Package type
0.50 (0.80 diameter) >0.1 Amp/Watt (QE>28%) >0.05 Amp/Watt (QE>20%) >100 <250 TO-46 with Schott glass cap, other packages (SMT, TO8, etc.) other windows, (fused silica, sapphire, windowless) available
Boston Electronics Corporation, Boylston Street, Brookline 02445
(800)347-5445 (617)566-3821 (617)731-0935 boselec@boselec.com www.boselec.com

Gallium Nitride (GaN) p-i-n photodiodes ultraviolet photodetectors tha

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