CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER

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CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER

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CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
DESCRIPTION APPLICATIONS: Bipolarics' high performance MMIC amplifier designed general purpose systems over frequency range from less than greater than GHz. Application requires minimal number external components; input output blocking capacitors, resistor bias current, optional choke. well suited operation features very good intermodulation characteristics. cascaded higher gain. Bipolarics Series fabricated using noise silicon bipolar process which utilizes implantation gold metallization. Package options include SOT-143J, Stripline, Plastic Micro-X, Hermetic Micro-X bare unencapsulated chips.
Wide bandwidth
ceramic Micro-X plastic packages
Suitable systems typical gain High IP3:
PERFORMANCE DATA: Performance Characteristics 25oC) SYMBOL
PARAMETERS/CONDITIONS
ZOUT unless stated
UNITS
Volts
13.5 13.0 13.5 13.5 13.5 ±0.6 2.0:1 1.8:1 19.0
Small signal gain Dice SOT-143 Ceramic Plastic Strip Gain Flatness: Bandwidth Input VSWR, Output VSWR, Output Power Compression: Third Order Intercept Point: Noise Figure: Device Voltage (Pin Normal Operating Current Ceramic Plastic
12.5 12.5
14.5 14.5 ±1.0
VSWR P1dB
15.0
22.0
40.0
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Part Number
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
ABSOLUTE MAXIMUM RATINGS:
Parameter
Device Current Power Dissipation Input Power Junction Temperature Storage Temperature
Limit
00,05,10 00,05,10
+150
With 3.8V typical part will near nominal linear operating point. 3.8V bias usually provided series resistor, RBIAS, from some supply voltage greater than 3.8V. optional choke permits improved large signal handling. supply line should bypassed with good capacitor. Biasing completed with high quality blocking capacitor hi-pass capacitor input output.
NOTES: Permanent damage occur these limits exceeded. TCASE Derate indicated below: Package Package 13.3
APPLICATION INFORMATION:
Silicon MMIC Amplifier excellent choice wide range applications from through microwave frequencies. Gain andbelow typically typical bandwidth GHz. effective microwave applications with supply. GHz, gain still available. Provided good layout practice used, stable easy use. higher gain, BA7's cascaded. Careful supply bypass layout needed cascade applications assure stability. amplifiers power transmitters requiring larger signal handling high gain, cascaded with BA11 achieve before compression. Like biased Darlington amplifiers there range operation which depends base-emitter voltages transistors exact value resistors which bias input (see Figure voltage input increases, base-emitter junction begins turn
ORDERING INFORMATION:
Including Dice -00* Temp Range +125°C +85°C +125°C +85°C +125°C
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BIPOLARICS INC.
Part Number
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
PAGE
BIPOLARICS INC.
Part Number
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
PAGE
Part Number
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
TYPICAL PARAMETERS
FREQ. (GHZ) 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 0.1698 0.2089 0.2818 0.3162 0.3890 0.4731 0.5688 0.6531 0.6918 -126 -142 -168 Bias: Vd=3.3V Id=22mA S-Matrix: Zs=50.00+j0.0 ZL=50.00+j0.0 .8977 0.1047 4.5708 0.1122 3.8018 0.1258 3.0199 0.1380 2.6302 0.1566 2.2908 0.1698 1.9724 0.1949 1.7579 0.2065 1.4962 0.2398
0.3388 0.2884 0.2754 0.2630 0.2818 0.3090 0.3548 0.4027 0.4897 -101
13.80 13.20 11.60 9.60 8.40 7.20 5.90 4.90 3.50
Package: SOT-143
-02J Package: SOT-143J
LEAD
MMIC Amps
Input Ground Output Ground Bias

CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER

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