FDS6614A N-Channel Logic Level PowerTrenchMOSFET General Des

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

FDS6614A N-Channel Logic Level PowerTrenchMOSFET General Des

Datasheet Thumbnail

Top Searches for this datasheet

FDS6614A
FDS6614A
N-Channel Logic Level PowerTrenchMOSFET
General Description
This N-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance maintain superior switching performance. These devices well suited voltage battery powered applications where in-line power loss fast switching required.
Features
RDS(ON) 0.018 RDS(ON) 0.025
gate charge (12nC typical). Fast switching speed. High performance trench technology extremely RDS(ON). High power current handling capability.
Applications
DC/DC converter Load switch Motor drives
SO-8
25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
(Note
Units
+150
Power Dissipation Single Operation
(Note (Note (Note
Tstg
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Outlines Ordering Information
Device Marking
FDS6614A
Device
FDS6614A
Reel Size
13''
Tape Width
12mm
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDS6614A Rev.
FDS6614A
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Referenced 25°C
Units
Characteristics
BVDSS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note
-100
mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS, Referenced 25°C A,TJ 125°C
0.015 0.022 0.019
mV/°C
0.018 0.030 0.025
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
1160
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
0.75
Notes: junction-to-case case-to-ambient resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
when mounted copper.
105° when mounted 0.04 copper.
125° when mounted mimimum pad.
Scale letter size paper Pulse Test: Pulse Width Duty Cycle 2.0%
FDS6614A Rev.
FDS6614A
Typical Characteristics
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE CURRENT 6.0V 4.5V 4.0V 3.5V 3.5V 4.0V VDS, DRAIN-SOURCE VOLTAGE DRAIN CURRENT 4.5V 5.0V 7.0V 3.0V
3.0V
2.5V
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.06 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
9.3A
0.05
0.04 0.03 125oC 0.02 25oC 0.01 VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE
Figure On-Resistance Variation with Temperature.
25oC 125oC REVERSE DRAIN CURRENT DRAIN CURRENT -55oC
Figure On-Resistance Variation with Gate-to-Source Voltage.
125oC 25oC 0.01 0.001 0.0001 -55oC
VGS, GATE SOURCE VOLTAGE
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6614A Rev.
FDS6614A
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE 9.3A
(continued)
1600 CAPACITANCE (pF) 1400 1200 1000 COSS CRSS CISS
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate-Charge Characteristics.
Figure Capacitance Characteristics.
RDS(ON) LIMIT DRAIN CURRENT 100µs 10ms 100ms SINGLE PULSE 125oC/W 25oC 0.01 VDS, DRAIN-SOURCE VOLTAGE
POWER
SINGLE PULSE =125°C/W 25°C
0.001
0.01
SINGLE PULSE TIME (SEC)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
ANSI RESISTANC
r(t), NORM IZED EFFECTIVE
r(t) 125°C
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient themal response will change depending circuit board design.
FDS6614A Rev.
SO-8 Tape Reel Data Package Dimensions
SOIC(8lds) Packaging Configuration: Figure
Packaging Description:
ROST DEVICES
ROST ADIO
NUMB PEEL STREN _gms
Antistatic Cover Tape
Label
SOIC-8 parts shipped tape. carrier tape made from dissipative (carbon filled) polycarbonate resin. cover tape multilayer film (Heat Activated Adhesive nature) primarily composed polyester film, adhesive layer, sealant, anti-static sprayed agent. These reeled parts standard option shipped with 2,500 units 330cm diameter reel. reels dark blue color made polystyrene plastic (antistatic coated). Other option comes units 177cm diameter reel. This some other options further described Packaging Information table. These full reels individually barcode labeled placed inside standard intermediate (illustrated figure 1.0) made recyclable corrugated brown paper. contains reels maximum. these boxes placed inside barcode labeled shipping which comes different sizes depending number parts shipped.
Static Dissipative Embossed Carrier Tape
F63TNR Label Customized Label
F852 9959 F852 9959 F852 9959 F852 9959
SOIC (8lds) Packaging Information Packaging Option Packaging type Reel/Tube/Bag Reel Size Dimension (mm) Weight unit (gm) Weight Reel (kg) Note/Comments Standard flow code) 2,500 343x64x343 5,000 0.0774 0.6060 L86Z Rail/Tube 530x130x83 30,000 0.0774 F011 4,000 343x64x343 8,000 0.0774 0.9696 D84Z 184x187x47 1,000 0.0774 0.1182
F852 9959
SOIC-8 Unit Orientation
343mm 342mm 64mm Standard Intermediate Label F63TNR Label sample
LOT: CBVK741B019 FSID: FDS9953A QTY: 2500 SPEC:
F63TNLabel F63TN Label Label
(F63TNR)3
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F:
SOIC(8lds) Tape Leader Trailer Configuration: Figure
Carrier Tape Cover Tape
Components Trailer Tape 640mm minimum empty pockets Leader Tape 1680mm minimum empty pockets
July 1999, Rev.
SO-8 Tape Reel Data Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape Configuration: Figure
User Direction Feed
Dimensions millimeter type SOIC(8lds) (12mm)
6.50 +/-0.10
5.30 +/-0.10
12.0 +/-0.3
1.55 +/-0.05
1.60 +/-0.10
1.75 +/-0.10
10.25
5.50 +/-0.05
+/-0.1
+/-0.1
+/-0.10
0.450 +/0.150
+/-0.3
0.06 +/-0.02
Notes: dimensions determined with respect EIA/Jedec RS-481 rotational lateral movement requirements (see sketches
maximum Typical component cavity center line
0.5mm maximum
maximum component rotation
0.5mm maximum
Sketch (Side Front Sectional View)
Component Rotation
Sketch (Top View)
Typical component center line
Sketch (Top View)
Component lateral movement
SOIC(8lds) Reel Configuration: Figure
Component Rotation
Measured
detail
Diameter Option
detail
Diameter Option
Measured DETAIL
Dimensions inches millimeters
Tape Size
12mm
Reel Option
7.00 177.8 13.00
0.059 0.059
+0.020/-0.008 +0.5/-0.2 +0.020/-0.008 +0.5/-0.2
0.795 20.2 0.795 20.2
2.165 7.00
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0
0.724 18.4 0.724 18.4
(LSL-USL)
0.469 0.606 11.9 15.4 0.469 0.606 11.9 15.4
12mm
1998 Fairchild Semiconductor Corporation
July 1999, Rev.
SO-8 Tape Reel Data Package Dimensions, continued
SOIC-8 Code
Scale letter size paper
Dimensions shown below inches [millimeters]
Part Weight unit (gram): 0.0774
September 1998, Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST® FASTrGTOHiSeCDISCLAIMER
QFETQSQuiet SeriesSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTinyLogicUHCVCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6614A N-Channel Logic Level PowerTrenchMOSFET General Des

Top Searches for this datasheet

Other recent searches