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Part Number BA3

CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER

BIPOLARICS, INC.
Part Number BA3
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
PRODUCT SPECIFICATION
FEATURES:
PARAMETERS / CONDITIONS
UNITS
dB dB dB dB dB dB dB GHz GHz
G f 3dB VSWR P1dB IP3 NF Vd Id
dBm dB dB Volts mA 4.0 20.0
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BIPOLARICS, INC.
Part Number BA3
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
ABSOLUTE MAXIMUM RATINGS: Parameter
Device Current Power Dissipation (2) (3) RF Input Power Junction Temperature Storage Temperature
NOTES:
Limit (1)
80 mA 70mA 425 mW 400mW +20 dBm 150 0 C -65 o C to +150 o C
With 5.0V at Pin 3, a typical part will be near its nominal linear operating point. The 5.0V DC bias at Pin 3 is usually provided by a series resistor, RBIAS, from some supply voltage greater than 6.0V. The use of an optional RF choke permits improved large signal handling. The supply line should be bypassed with a good RF capacitor. Biasing is completed with a high quality DC blocking capacitor or hi-pass capacitor at the input and output.
APPLICATION INFORMATION:
The BA3 Silicon MMIC Amplifier is an excellent choice for wideband applications from HF through microwave frequencies. Gain at 100 MHz and above is typically 12.5 dB. The typical 3 dB bandwidth is 2.4-2.7 GHz. The BA3 is effective in RF and microwave applications with a 7V supply. At 3 GHz, 8dB of gain is still available. Provided good layout practice is used, the BA3 is stable and easy to use. For higher gain, two (2) BA3s can be cascaded. Careful supply bypass and RF layout is needed in cascade applications to assure stability. For amplifiers and low power transmitters up to 1.5 GHz requiring larger signal handling and higher gain, BA3 can be cascaded with a BA11.to achieve +17 dBm before compression. Like all biased Darlington amplifiers there is a range of operation which depends on the base-emitter voltages of the transistors and the exact value of the resistors which bias the input (see Figure 1). As the voltage at the input increases, the base-emitter junction begins to turn on.
ORDERING INFORMATION:
P / N Including Pkg BA3 BA3 BA3 BA3 14J 70 85 35 Temp Range -40 to +85°C -55 to +125°C -40 to +85°C -55 to +125°C
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BIPOLARICS INC.
Part Number BA3
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
PAGE 4
BIPOLARICS INC.
Part Number BA3
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
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BIPOLARICS, INC.
Part Number BA3
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
TYPICAL S PARAMETERS
S22 Mag Ang 0.4027 -8 0.3672 -30 0.3311 -53 0.2818 -77 0.2600 -93 0.2630 -123 0.2884 -124 0.2917 -128 0.3126 -138
S21 dB 11.80 11.60 11.20 10.60 10.40 8.90 7.80 6.60 6.10
14 Package: SOT-143
14J Package: SOT-143J
MMIC AMPS
RF Input Ground RF Output Ground and Bias
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BIPOLARICS, INC.
Part Number BA3
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
86 Package: 0.085" Plastic, Surface Mount 87 Package: 0.085" Plastic Short Lead
85 Package: 0.085" Plastic Micro-X
04 Package: 0.145" Plastic X-PAC
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BIPOLARICS, INC.
70 Package: 0.070" Hermetic Stripline
Part Number BA3
35 Package: 0.085" Hermetic Micro-X
CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER
MMIC AMPS
Gound
RF Input Gound RF Output and Bias
BIPOLARICS, INC. 602 Charcot Ave. San Jose, CA 95131 Phone: (408) 456-0430 FAX: (408) 456-0431