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REVISIONS DESCRIPTION Changes accordance with 5962-R041-92 Changes accordance with 5962-R211-93 device class level Update boilerplate throughout. Update boilerplate MIL-PRF-38535 requirements. DATE (YR-MO-DA) 91-11-25 93-08-13 97-07-17 01-06-14 APPROVED Poelking Poelking Hess Thomas Hess
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DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http://www.dscc.dla.mil
THIS DRAWING AVAILABLE DEPARTMENTS AGENCIES DEPARTMENT DEFENSE
APPROVED Cool
DRAWING APPROVAL DATE June 1988 REVISION LEVEL
MICROCIRCUIT, DIGITAL, CMOS, CONTROLLER REMOTE TERMINAL, MONOLITHIC SILICON
SIZE SHEET 5962-E470-01 CAGE CODE 67268
AMSC
5962-88628
DSCC FORM 2233 DISTRIBUTION STATEMENT Approved public release; distribution unlimited.
SCOPE Scope. This drawing documents product assurance class levels consisting high reliability (device classes space application (device class choice case outlines lead finishes available reflected Part Identifying Number (PIN). When available, choice Radiation Hardness Assurance (RHA) levels reflected PIN. PIN. shown following examples. device classes 5962 Federal stock class designator designator (see 1.2.1) Drawing number device class 5962 Federal stock class designator designator (see 1.2.1) Drawing number 1.2.1 designator. Device classes marked devices meet MIL-PRF-38535 specified levels marked with appropriate designator. Device class marked devices meet MIL-PRF-38535, appendix specified levels marked with appropriate designator. dash indicates non-RHA device. 1.2.2 Device type(s). device type(s) identify circuit function follows: Device type Generic number UT1553 BCRT Circuit function controller remote terminal 88628 Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) 88628 Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5)
1.2.3 Device class designator. device class designator single letter identifying product assurance level listed below. Since device class designator been added after original issuance this drawing, device classes designators will included will marked device. Device class Device requirements documentation Vendor self-certification requirements MIL-STD-883 compliant, non-JAN class level microcircuits accordance with MIL-PRF-38535, appendix Certification qualification MIL-PRF-38535
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1.2.4 Case outline(s). case outline(s) designated MIL-STD-1835 follows: Outline letter Descriptive designator CQCC1-F132 CMGA15-P84 CQCC2-J84 CQCC1-N84 Terminals Package style Leaded chip carrier with unformed leads grid array Leaded chip carrier with unformed leads Square chip carrier
1.2.5 Lead finish. lead finish specified MIL-PRF-38535 device classes MIL-PRF-38535, appendix device class Absolute maximum ratings. Supply voltage range input/dc output voltage range Storage temperature range Maximum power dissipation (PD) Maximum junction temperature (TJ). Thermal resistance, junction-to-case (JC) Latchup immunity (ILU) Output short-circuit current (IOS): A(0-15), D(0-15), DMAR DMACK STDINTL HPINT other outputs Recommended operating conditions. Supply voltage (VDD). Case operating temperature range Radiation features: Total dose Single event phenomenon (SEP) effective linear energy threshold, upsets latchup (see 4.4.4.4) Dose rate upset pulse) Dose rate latchup Dose rate survivability Neutron irradiated Digital logic testing device classes Fault coverage measurement manufacturing logic tests (MIL-STD-883, test method 5012) 86.5 percent -55°C +125°C Rads (Si)
-0.3 +7.0 -0.3 +0.3 -65°C +150°C +175°C MIL-STD-1835 ±150
MEV/(mg/cm
Stresses above absolute maximum rating cause permanent damage device. Extended operation maximum levels degrade performance affect reliability. Must withstand added short circuit test, IOS. When characterized result procuring activities request, condition will specified.
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APPLICABLE DOCUMENTS Government specification, standards, handbooks. following specification, standards, handbooks form part this drawing extent specified herein. Unless otherwise specified, issues these documents those listed issue Department Defense Index Specifications Standards (DoDISS) supplement thereto, cited solicitation. SPECIFICATION MILITARY MIL-PRF-38535 Integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 MIL-STD-1835 HANDBOOKS MILITARY MIL-HDBK-103 MIL-HDBK-780 List Standard Microcircuit Drawings. Standard Microcircuit Drawings. Test Methods Procedures Microelectronics. Interface Standard Electronic Conponent Case Outlines.
(Unless otherwise indicated, copies specification, standards, handbooks available from Standardization Document Order Desk, Robbins Avenue, Building Philadelphia, 19111-5094.) Order precedence. event conflict between text this drawing references cited herein, text this drawing takes precedence. Nothing this document, however, supersedes applicable laws regulations unless specific exemption been obtained. REQUIREMENTS Item requirements. individual item requirements device classes shall accordance with MIL-PRF-38535 specified herein modified device manufacturer's Quality Management (QM) plan. modification plan shall affect form, fit, function described herein. individual item requirements device class shall accordance with MIL-PRF-38535, appendix non-JAN class level devices specified herein. Design, construction, physical dimensions. design, construction, physical dimensions shall specified MIL-PRF-38535 herein device classes MIL-PRF-38535, appendix herein device class 3.2.1 Case outline(s). case outline(s) shall accordance with 1.2.4 herein. 3.2.2 Terminal connections. terminal connections shall specified figure 3.2.3 Functional block diagram. functional block diagram shall specified figure 3.2.4 Test circuit switching waveforms. test circuit switching waveforms shall specified figure 3.2.5 Radiation exposure circuit. radiation exposure circuit shall specified figure Electrical performance characteristics postirradiation parameter limits. Unless otherwise specified herein, electrical performance characteristics postirradiation parameter limits specified table shall apply over full case operating temperature range.
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Electrical test requirements. electrical test requirements shall subgroups specified table electrical tests each subgroup defined table Marking. part shall marked with listed herein. addition, manufacturer's also marked listed MIL-HDBK-103. packages where marking entire number feasible space limitations, manufacturer option marking "5962-" device. product using this option, designator shall still marked. Marking device classes shall accordance with MIL-PRF-38535. Marking device class shall accordance with MIL-PRF-38535, appendix 3.5.1 Certification/compliance mark. certification mark device classes shall "QML" required MIL-PRF-38535. compliance mark device class shall required MIL-PRF-38535, appendix Certificate compliance. device classes certificate compliance shall required from QML-38535 listed manufacturer order supply requirements this drawing (see 6.6.1 herein). device class certificate compliance shall required from manufacturer order listed approved source supply MIL-HDBK-103 (see 6.6.2 herein). certificate compliance submitted DSCC-VA prior listing approved source supply this drawing shall affirm that manufacturer's product meets, device classes requirements MIL-PRF-38535 herein device class requirements MIL-PRF-38535, appendix herein. Certificate conformance. certificate conformance required device classes MIL-PRF-38535 device class MIL-PRF-38535, appendix shall provided with each microcircuits delivered this drawing. Notification change device class device class notification DSCC-VA change product (see herein) involving devices acquired this drawing required change defined MIL-PRF-38535, Appendix Verification review device class device class DSCC, DSCC's agent, acquiring activity retain option review manufacturer's facility applicable required documentation. Offshore documentation shall made available onshore option reviewer.
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TABLE Electrical performance characteristics. Test Symbol Conditions -55°C +125°C unless otherwise specified Group subgroups Device type Limits Unit
level input voltage inputs High level input voltage inputs Input leakage current: inputs
Inputs with pulldown resistors Inputs with pull-up resistors
-550 -900
-150
level output voltage outputs High level output voltage outputs Three-state output leakage current outputs Short-circuit output current
-400 VOUT VOUT VOUT
-100
Quiescent current Input capacitance Output capacitance Bidirect capacitance footnotes table.
QIDD COUT 4.4.1b
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TABLE Electrical performance characteristics. Continued Test Symbol Conditions -55°C +125°C ±10% unless otherwise specified Group subgroups Device type Limits Unit
Functional test DMAG DMACK MCLK DATA valid MCLK MCLKD2 MCLK DATA valid MEMSCI MEMSCO footnotes table. tPHL1 tIOHL1 tOOZL1 tPLH1 tIOHL2 tPHL2 tPHL3 tPHL4 tPHL5 4.4.1c figure
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TABLE Electrical performance characteristics. Continued Devices supplied this drawing characterized levels irradiation. However, this device only tested level. Post irradiation values identical unless otherwise specified Table When performing post irradiation electrical measurements level, +25°C. Radiation hardened technology shall have pre-irradiation Guaranteed limit specified table tested. more than output shorted time maximum duration second. inputs with internal pull-ups should left floating. other inputs should tied high low. capacitance measurements shall made between indicated terminal ground frequency +25°C. bias measuring instrument shall ±0.1 signal amplitude shall less than RMS. Switching tests performed with input test conditions output transition times measured Timing valid timer field message status word. timer value update during memory write. TABLE test limits Device type Temperature ±10°C Memory pattern Bias latchup test =5.5 latch-up
Effective upsets [MEV/(mg/cm
+25°C
Maximum device cross section (LET 120)
NOTE: Devices that contain cross coupled resistance must tested maximum rated test conditions, 4.4.4.4 herein. Technology characterization model verification supplemented in-line data used lieu end-of-line testing. Test plan must approved qualifying activity. Values will added when they become available. hard devices have been tested SEP. Worst case temperature +125°C. memories only.
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NOTE: MEMWIN internal test only should considered floating use. FIGURE Terminal connections.
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NOTE: MEMWIN internal test only should considered floating use. FIGURE Terminal connections. Continued
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Case Terminal number Terminal symbol LOCK EXTOVR TIMERON CHA/B COMSTR RTAO Terminal number Terminal symbol RTA1 RTA2 RTA3 RTA4 RTPTY Terminal number Terminal symbol MEMCSO TSCTL DMAR DMAG DMACK MEMCSI Terminal number Terminal symbol MCLK DMAGO STDINTL STDINTP HPINT MCLKD2 SSYSF TEST BURST BCRTF Terminal number Terminal symbol MRST BCRTSEL
NOTES: following terminals active low: terminal 130. connect.
FIGURE Terminal connections. Continued
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FIGURE Functional block diagram.
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ADDRESS
DATA
GROUND
NOTES: internally pulled high impedance when asserted. Bidirectional pin. Case outline lead identification parenthesis, cases parenthesis. MEMWIN internal test only should considered floating use. FIGURE Functional block diagram. Continued
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FIGURE Switching test circuit waveforms.
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FIGURE Switching test circuit waveforms. Continued
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FIGURE Switching test circuit waveforms. Continued
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Open (K3), (L2), (L4), (K6), (K7), (J7), (L8), (H11), (G9), (G10), (G11), (E9), (E11), (E10), (F11), (D11), (D10), (C11), (B11), (C10), (A11), (B10), (B9), (A10), (B8), (B5), (A6), (A4), (B4), (A3), (B3), A1), (B2), (C2), (B1), (C1), (D2), (D1), (F2), (E2), (E1)
±0.5 (J2), (L1), (K2), (L6), (L7), (K8), (F9), (A9), (A8), (B7), (C6), (E3)
Ground (F3), (F1), (G1), (G2) (G3), (H1), (H2), (J1), (K1), (L3), (K4), (K5), (L5), (J5), (J6), (L9), (L10), (K9), (L11), (K10), (J10), (K11), (J11), (H10), (F10), (C7), (A7), (B6), (C5), (A5), (A2)
grid array identification parenthesis. Flat pack number parenthesis.
FIGURE Radiation exposure circuit.
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3.10 Microcircuit group assignment device class Device class devices covered this drawing shall microcircuit group number (see MIL-PRF-38535, appendix QUALITY ASSURANCE PROVISIONS Sampling inspection. device classes sampling inspection procedures shall accordance with MIL-PRF-38535 modified device manufacturer's Quality Management (QM) plan. modification plan shall affect form, fit, function described herein. device class sampling inspection procedures shall accordance with MIL-PRF-38535, appendix Screening. device classes screening shall accordance with MIL-PRF-38535, shall conducted devices prior qualification technology conformance inspection. device class screening shall accordance with method 5004 MIL-STD-883, shall conducted devices prior quality conformance inspection. 4.2.1 Additional criteria device class Burn-in test, method 1015 MIL-STD-883. Test condition test circuit shall maintained manufacturer under document revision level control shall made available preparing acquiring activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1015. +125°C, minimum. Interim final electrical test parameters shall specified table herein.
4.2.2 Additional criteria device classes burn-in test duration, test condition test temperature, approved alternatives shall specified device manufacturer's plan accordance with MIL-PRF-38535. burn-in test circuit shall maintained under document revision level control device manufacturer's Technology Review Board (TRB) accordance with MILPRF-38535 shall made available acquiring preparing activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1015 MIL-STD-883. Interim final electrical test parameters shall specified table herein. Additional screening device class beyond requirements device class shall specified MIL-PRF38535, appendix
Qualification inspection device classes Qualification inspection device classes shall accordance with MIL-PRF-38535. Inspections performed shall those specified MIL-PRF-38535 herein groups inspections (see 4.4.1 through 4.4.4). Conformance inspection. Technology conformance inspection classes shall accordance with MILPRF-38535 including groups inspections specified herein. Quality conformance inspection device class shall accordance with MIL-PRF-38535, appendix specified herein. Inspections performed device class shall those specified method 5005 MIL-STD-883 herein groups inspections (see 4.4.1 through 4.4.4).
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4.4.1 Group inspection. Tests shall specified table herein. Subgroup (CIN, COUT, CI/O) shall measured only initial test after process design changes which affect input capacitance. each input/output driver (buffer) type shall tested each sample device. device class subgroups tests shall sufficient verify functionality device. device classes subgroups shall include verifying functionality device; these tests shall have been fault graded accordance with MIL-STD-883, test method 5012 (see herein). TABLE IIA. Electrical test requirements. Test requirements Subgroups accordance with MIL-STD-883, method 5005, table Device class Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group test requirements (see 4.4) Group end-point electrical parameters (see 4.4) Group end-point electrical parameters (see 4.4) Group end-point electrical parameters (see 4.4) -Subgroups accordance with MIL-PRF-38535, table III) Device class -Device class
applies subgroup applies subgroups Delta limits specified Table herein shall required when specified Delta values shall completed with reference zero hour electrical parameter. Table IIB. Delta limits Parameter IDDQ Condition 25°C Limits ±10% measured value whichever greater
NOTE: device tested below deltas required. Delta's performed room temperature.
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4.4.2 Group inspection. group inspection end-point electrical parameters shall specified table herein. 4.4.2.1 Additional criteria device class Steady-state life test conditions, method 1005 MIL-STD-883: Test condition test circuit shall maintained manufacturer under document revision level control shall made available preparing acquiring activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1005 MIL-STD-883. +125°C, minimum. Test duration: 1,000 hours, except permitted method 1005 MIL-STD-883. 4.4.2.2 Additional criteria device classes steady-state life test duration, test condition test temperature, approved alternatives shall specified device manufacturer's plan accordance with MIL-PRF-38535. test circuit shall maintained under document revision level control device manufacturer's accordance with MILPRF-38535 shall made available acquiring preparing activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1005 MIL-STD-883. 4.4.3 Group inspection. group inspection end-point electrical parameters shall specified table herein. 4.4.4 Group inspection. Group inspection required only parts intended marked radiation hardness assured (see herein). End-point electrical parameters shall specified table herein. device classes devices test vehicle shall subjected radiation hardness assured tests specified MIL-PRF-38535 level being tested. device class devices shall subjected radiation hardness assured tests specified MIL-PRF-38535, appendix level being tested. device classes must meet postirradiation end-point electrical parameter limits defined table +25°C ±5°C, after exposure, subgroups specified table herein. When specified purchase order contract, copy delta limits shall supplied. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall performed accordance with MIL-STD-883 method 1019 specified herein. 4.4.4.1.1 Accelarated aging test. Accelaerated aging tests shall performed devices requiring level greater than rads (Si). post-anneal end-point electrical parameter limits shall specified table herein shall pre-irradiation end-point electrical parameter limit 25°C ±5°C. Testing shall performed initial qualification after design process changes which affect response device. 4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall performed accoradance with test method 1020 MIL-STD-883 sprcified herein (see 1.4). Tests shall performed devices, SEC, approved test structures technology qualification after design process changes which effect capability process. 4.4.4.3 Dose rate upset testing. Dose rate upset testing shall performed accoradance with test method 1021 MIL-STD883 herein (see 1.4). Transient dose rate upset testing shall performed initial qualification after design process changes which effect performance devices. Test devices with defects unless otherwise specified. Transient dose rate upset testing class devices shall performed specified approved radiation hardness assurance plan MIL-PRF-38535.
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4.4.4.4 Single event phenomena (SEP). testing shall required class devices (See 1.4). testing shall performed Standard Evaluation Circuit (SEC) alternate test vehice approved qualifying activity initial qualification after design process changes which affect upse latchup characteristics. recommended test conditions follows: beam angle incidence shall between normal surface normal, inclusive (i.e. angle 60°). shadowing beam fixturing package related effects allowed. fluence shall errors ions/cm
flux shall between ions/cm cross-section shall verified flux independent measuring cross-section flux rates which differ least order magnitude. particle range shall microns silicon. test temperature shall +25°C maximum rated operating temperature ±10°C. Bias conditions shall defined manufacturer latchup measurements. Test four devices with zero failures. test limits, Table herein. PACKAGING Packaging requirements. requirements packaging shall accordance with MIL-PRF-38535 device classes MIL-PRF-38535, appendix device class NOTES Intended use. Microcircuits conforming this drawing intended Government microcircuit applications (original equipment), design applications, logistics purposes. 6.1.1 Replaceability. Microcircuits covered this drawing will replace same generic device covered contractor-prepared specification drawing. Configuration control SMD's. proposed changes existing SMD's will coordinated with users record individual documents. This coordination will accomplished using Form 1692, Engineering Change Proposal. Record users. Military industrial users should inform Defense Supply Center Columbus when system application requires configuration control which SMD's applicable that system. DSCC will maintain record users this list will used coordination distribution changes drawings. Users drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. Comments. Comments this drawing should directed DSCC-VA, Columbus, Ohio 43216-5000, telephone (614) 692-0547.
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Abbreviations, symbols, definitions. abbreviations, symbols, definitions used herein defined MIL-PRF38535 MIL-HDBK-1331 follows: Name number Cases Case Type Active Description (LSB) address address address address address address address address address address address address address address address address (LSB) data data data data data data data data
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Abbreviations, symbols, definitions. Continued Name DMAR DMAG DMAGO DMACK MEMCSO MEMCSI TSCTL STDINTL STDINTP HPINT Standard interrupt pulse High priority interrupt Clock number Cases Case Type Active Description data data data data data data data data request grant grant acknowledge Chip select Read Write Memory chip select Memory chip select read write Three state control Address enable Standard interrupt level
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Abbreviations, symbols, definitions. Continued
Name MCLK MCLKD2 TIMERON CHA/ MRST COMSTR BCRTSEL RTAO RTA1 RTA2 RTA3 RTA4 RTPTY SSYSF BCRTF BURST MEMWIN
number Cases Case
Type
Active
Description Memory clock Memory clock divided Transmit (channel) Transmit (channel) Transmit (channel) Transmit (channel) Receive (channel) Receive (channel) Receive (channel) Receive (channel) (RT) timer Channel Master reset (RT) command strobe select Remote terminal address (LSB) Remote terminal address Remote terminal address Remote terminal address Remote terminal address Remote terminal (address) parity Subsystem fail BCRT fail Burst (DMA cycle) Memory (access) window
NOTE: MEMWIN internal test only should considered floating use.
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Abbreviations, symbols, definitions. Continued
Name LOCK EXTOVR
number Cases Case
Type
Active Lock External override Ground Ground Ground Ground
Description
Abbreviations: Active Active high Active inactive state high impedance Address data busses active high high impedance state when idle.
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Sources supply. 6.6.1 Sources supply device classes Sources supply device classes listed QML-38535. vendors listed QML-38535 have submitted certificate compliance (see herein) DSCC-VA have agreed this drawing. 6.6.2 Approved sources supply device class Approved sources supply class listed MIL-HDBK-103. vendors listed MIL-HDBK-103 have agreed this drawing certificate compliance (see herein) been submitted accepted DSCC-VA. Additional information. copy following additional data shall maintained available from device manufacturer: upset levels. Test conditions (SEP). Number upsets (SEP). Number transients (SEP). Occurrence latchup (SEP).
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STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 01-06-14 Approved sources supply 5962-88628 listed below immediate acquisition information only shall added MIL-HDBK-103 QML-38535 during next revision. MIL-HDBK-103 QML-38535 will revised include addition deletion sources. vendors listed below have agreed this drawing certificate compliance been submitted accepted DSCC-VA. This bulletin superseded next dated revision MIL-HDBK-103 QML-38535. Standard microcircuit drawing 5962-8862801XA 5962-8862801XC 5962-8862801YA 5962-8862801YC 5962-8862801ZA 5962-8862801ZC 5962-8862801TA 5962-8862801TC 5962H8862801XA 5962H8862801XC 5962H8862801YA 5962H8862801YC 5962H8862801ZA 5962H8862801ZC 5962H8862801TA 5962H8862801TC 5962H8862801VXA 5962H8862801VXC 5962H8862801VYA 5962H8862801VYC 5962H8862801VZA 5962H8862801VZC 5962H8862801VTA 5962H8862801VTC Vendor CAGE number 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 Vendor similar UT1553BCRTGA UT1553BCRTGC UT1553BCRTWA UT1553BCRTWC UT1553BCRTAA UT1553BCRTAC UT1553BCRTFA UT1553BCRTFC UT1553BCRTGAH UT1553BCRTGCH UT1553BCRTWAH UT1553BCRTWCH UT1553BCRTAAH UT1553BCRTACH UT1553BCRTFAH UT1553BCRTFCH UT1553BCRTVGAH UT1553BCRTVGCH UT1553BCRTVWAH UT1553BCRTVWCH UT1553BCRTVAAH UT1553BCRTVACH UT1553BCRTVFAH UT1553BCRTVFCH
lead finish shown each representing hermetic package most readily available from manufacturer listed that part. desired lead finish listed contact Vendor determine availability. Caution. this number item acquisition. Items acquired this number satisfy performance requirements this drawing.
Vendor CAGE number 65342
Vendor name address Aeroflex UTMC Microelectronics System Inc. 4350 Centennial Boulevard Colorado Springs, Colorado 80907-3486
information contained herein disseminated convenience only Government assumes liability whatsoever inaccuracies information bulletin.
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