These N-Channel logic level enhancement mode power field effect transi

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FDP603AL FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor
These N-Channel logic level enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance. These devices particularly suited voltage applications such DC/DC converters high efficiency switching circuits where fast switching, in-line power loss, resistance transients needed.
Features
RDS(ON) 0.022 VGS=10 RDS(ON) 0.036 VGS=4.5 Critical electrical parameters specified elevated temperature. Rugged internal source-drain diode eliminate need external Zener diode transient suppressor. High density cell design extremely RDS(ON). 175°C maximum junction temperature rating.
Absolute Maximum Ratings
Symbol VDSS VGSS Parameter Drain-Source Voltage
25°C unless otherwise noted
FDP603AL
(Note
FDB603AL
Units
Gate-Source Voltage Continuous Drain Current Continuous Pulsed Total Power Dissipation 25°C Derate above 25°C
0.33 W/°C
TJ,TSTG
Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 62.5 °C/W °C/W
1998 Fairchild Semiconductor Corporation
FDP603AL Rev.D
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted)
Conditions
Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
CHARACTERISTICS Drain-Source Breakdown Voltage Referenced VGS, Referenced =125 ID(on) ID(on) On-State Drain Current On-State Drain Current Forward Transconductance -4.5 0.018 0.026 0.03 0.022 0.035 0.036
-100
mV/oC
BVDSS/TJ Breakdown Voltage Temp. Coefficient
IDSS IGSSF IGSSR VGS(th) Zero Gate Voltage Drain Current Gate Body Leakage, Forward Gate Body Leakage, Reverse
(Note
CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance
mV/oC
VGS(th)/TJ
RDS(ON)
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tD(off)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
SWITCHING CHARACTERISTICS Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
0.85
125°C
Note Pulse Test: Pulse Width Duty Cycle 2.0%.
FDP603AL Rev.D
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
DRAIN-SOURCE ON-RESISTANCE
=10V
DS(ON) NORMALIZED
4.0V
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.06
DS(ON) ON-RESISTANCE (OHM)
DRAIN-SOURCE ON-RESISTANCE
DS(ON) NORMALIZED
12.5A
0.05
0.04
125°C
0.03
25°C
0.02
0.01
JUNCTION TEMPERATURE (°C)
GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
DRAIN CURRENT
REVERSE DRAIN CURRENT
125°C
25°C
-55°C
0.01
125°C
25°C -55°C
0.001
0.0001
GATE SOURCE VOLTAGE
BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDP603AL Rev.D
Typical Electrical Characteristics (continued)
GATE-SOURCE VOLTAGE
2000
5.0V
CAPACITANCE (pF)
1000
Ciss
Coss
GATE CHARGE (nC)
Crss
DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
Figure Capacitance Characteristics.
DRAIN CURRENT
2000
POWER
1600
SINGLE PULSE =3.0° 25°C
SINGLE PULSE
1200
0.01
1000
DRAIN-SOURCE VOLTAGE (V))
SINGLE PULSE TIME (ms)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
r(t) °C/W
0.05 P(pk)
0.05 0.03 0.02 0.01 0.01
0.02 0.01 Single Pulse
Duty Cycle, TIME (ms) 1000
0.05
Figure Transient Thermal Response Curve.
FDP603AL Rev.D

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