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N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Appli
Top Searches for this datasheetBF998/BF998R/BF998RW N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input mixer stages tuners. Features Integrated gate protection diodes noise figure feedback capacitance High cross modulation performance input capacitance High AGC-range High gain 9279 9278 10831 BF998 Marking: Plastic case (SOT 143) Source, Drain, Gate Gate BF998R Marking: Plastic case (SOT 143R) Source, Drain, Gate Gate BF998RW Marking: Plastic case (SOT 343R) Source, Drain, Gate Gate Document Number 85011 Rev. 23-Jun-99 www.vishay.de FaxBack +1-408-970-5600 BF998/BF998R/BF998RW Vishay Telefunken Absolute Maximum Ratings Tamb 25_C, unless otherwise specified Parameter Drain source voltage Drain current Gate 1/Gate source peak current Gate 1/Gate source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value ±IG1/G2SM ±VG1S/G2S Ptot Tstg +150 Unit Tamb Maximum Thermal Resistance Tamb 25_C, unless otherwise specified Parameter Test Conditions Channel ambient glass fibre printed board 1.5) plated with 35mm Symbol RthChA Value Unit Electrical Characteristics Tamb 25_C, unless otherwise specified Parameter Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Gate source leakage current Gate source leakage current Drain current Test Conditions -VG1S -VG2S ±IG1S VG2S ±IG2S VG1S ±VG1S VG2S ±VG2S VG1S VG1S VG2S Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS BF998/BF998R/ BF998RW BF998A/BF998RA/ BF998RAW BF998B/BF998RB/ BF998RBW IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) Unit 10.5 Gate source cut-off voltage Gate source cut-off voltage VG2S VG1S www.vishay.de FaxBack +1-408-970-5600 Document Number 85011 Rev. 23-Jun-99 BF998/BF998R/BF998RW Vishay Telefunken Electrical Characteristics VG2S Tamb 25_C, unless otherwise specified Parameter Forward transadmittance Gate input capacitance Gate input capacitance Feedback capacitance Output capacitance Power gain range Noise figure Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss DGps 1.05 Unit VG1S VG2S VG2S 16.5 Document Number 85011 Rev. 23-Jun-99 www.vishay.de FaxBack +1-408-970-5600 BF998/BF998R/BF998RW Vishay Telefunken Typical Characteristics (Tamb 25_C unless otherwise specified) Total Power Dissipation Drain Current VG1S= 12159 VDS= 12817 -0.6 -0.2 Tamb Ambient Temperature VG2S Gate Source Voltage Figure Total Power Dissipation Ambient Temperature Drain Current 12812 Figure Drain Current Gate Source Voltage VG2S= VG1S= 0.6V issg1 Gate Input Capacitance VDS=8V VG2S=4V f=1MHz 0.4V 0.2V -0.2V -0.4V -1.5 -1.0 -0.5 Drain Source Voltage 12863 VG1S Gate Source Voltage Figure Drain Current Drain Source Voltage Figure Gate Input Capacitance Gate Source Voltage Output Capacitance VDS= Drain Current -0.8 12816 VG2S=4V f=1MHz VG2S=-1V -0.4 12864 VG1S Gate Source Voltage Drain Source Voltage Figure Drain Current Gate Source Voltage Figure Output Capacitance Drain Source Voltage www.vishay.de FaxBack +1-408-970-5600 Document Number 85011 Rev. 23-Jun-99 BF998/BF998R/BF998RW 800MHz Transducer Gain -0.2V -0.4V 12818 1300MHz 12821 VDS=8V VG2S=4V f=100.1300MHz ID=5mA 10mA 20mA f=100MHz 400MHz 700MHz 1000MHz VG2S=-0.8V -0.5 VG1S Gate Source Voltage (y21) Figure Transducer Gain Gate Source Voltage y21s Forward Transadmittance 12819 Figure Short Circuit Forward Transfer Admittance VDS=8V f=1MHz VG2S=4V f=1300MHz 1000MHz 700MHz 400MHz 100MHz 0.25 0.50 0.75 VDS=15V VG2S=4V ID=10mA f=100.1300MHz 1.00 1.25 1.50 12822 Drain Current (y22) Figure Forward Transadmittance Drain Current 12820 Figure Short Circuit Output Admittance f=1300MHz 1000MHz 700MHz VDS=8V VG2S=4V ID=10mA f=100.1300MHz 400MHz 100MHz (y11) Figure Short Circuit Input Admittance Document Number 85011 Rev. 23-Jun-99 www.vishay.de FaxBack +1-408-970-5600 BF998/BF998R/BF998RW Vishay Telefunken VG2S 120° j0.5 150° j0.2 1300MHz 1200 180° 0.08 0.16 -j0.2 120° 150° 1300MHz 180° 1000 -j0.2 -150° -30° -j0.5 -120° -60° -90° Figure Forward transmission coefficient Figure Output reflection coefficient www.vishay.de FaxBack +1-408-970-5600 1300MHz 1000 -j0.5 -150° -30° -120° -60° -90° Figure Input reflection coefficient Figure Reverse transmission coefficient j0.5 j0.2 1300MHz Document Number 85011 Rev. 23-Jun-99 BF998/BF998R/BF998RW Vishay Telefunken Dimensions BF998 12240 Dimensions BF998R 12239 Document Number 85011 Rev. 23-Jun-99 www.vishay.de FaxBack +1-408-970-5600 BF998/BF998R/BF998RW Vishay Telefunken Dimensions BF998RW 12238 www.vishay.de FaxBack +1-408-970-5600 Document Number 85011 Rev. 23-Jun-99 BF998/BF998R/BF998RW Vishay Telefunken Ozone Depleting Substances Policy Statement policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances. reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423 Document Number 85011 Rev. 23-Jun-99 www.vishay.de FaxBack +1-408-970-5600 Other recent searchesXQF1306 - XQF1306 XQF1306 Datasheet VF20BM3 - VF20BM3 VF20BM3 Datasheet UCC286 - UCC286 UCC286 Datasheet UCC386 - UCC386 UCC386 Datasheet TK65025 - TK65025 TK65025 Datasheet SIQ125 - SIQ125 SIQ125 Datasheet PD70-01C - PD70-01C PD70-01C Datasheet AK4440 - AK4440 AK4440 Datasheet AK4420 - AK4420 AK4420 Datasheet 2SD1769 - 2SD1769 2SD1769 Datasheet
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