N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Appli

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N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Appli

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BF995
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Applications
Input- mixer stages especially TV-tuners MHz.
Features
Integrated gate protection diodes High cross modulation performance noise figure
High AGC-range feedback capacitance
9279
12623
BF995 Marking: Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 4=Gate
Absolute Maximum Ratings
Tamb 25_C, unless otherwise specified Parameter Drain source voltage Drain current Gate 1/Gate source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value ±IG1/G2SM Ptot Tstg +150 Unit
Tamb
Maximum Thermal Resistance
Tamb 25_C, unless otherwise specified Parameter Test Conditions Channel ambient glass fibre printed board 1.5) plated with 35mm Symbol RthChA Value Unit
Document Number 85009 Rev. 20-Jan-99
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BF995
Vishay Telefunken Electrical Characteristics
Tamb 25_C, unless otherwise specified Parameter Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Gate source leakage current Gate source leakage current Drain current Test Conditions -VG1S -VG2S ±IG1S VG2S ±IG2S VG1S ±VG1S VG2S ±VG2S VG1S VG1S VG2S BF995 BF995A BF995B Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) Unit
10.5
Gate source cut-off voltage Gate source cut-off voltage
VG2S VG1S
Electrical Characteristics
VG2S Tamb 25_C, unless otherwise specified Parameter Forward transadmittance Gate input capacitance Gate input capacitance Feedback capacitance Output capacitance Power gain range Noise figure Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss DGps Unit
VG1S VG2S
VG2S
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Document Number 85009 Rev. 20-Jan-99
BF995
Vishay Telefunken Typical Characteristics (Tamb 25_C unless otherwise specified)
Y21S Forward Transadmittance Total Power Dissipation
12159
VDS=15V f=1MHz VG2S=5V
12162
-2.0-1.5-1.0-0.5 VG1S Gate Source Voltage
Tamb Ambient Temperature
Figure Total Power Dissipation Ambient Temperature
Drain Current
12160
Figure Forward Transadmittance Gate Source Voltage
issg1 Gate Input Capacitance
VG1S= 0.6V 0.4V 0.2V -0.2V -0.4V -0.6V -0.8V
-2.0 -1.5 -1.0 -0.5 VG1S Gate Source Voltage VDS=15V VG2S=4V f=1MHz
Drain Source Voltage
12163
Figure Drain Current Drain Source Voltage
12161
Figure Gate Input Capacitance Gate Source Voltage
issg2 Gate Input Capacitance
Y21S Forward Transadmittance
VDS=15V IDS=10mA
VG1S=0.5V
VDS=15V VG1S=0 f=1MHz
-0.5V
12164
VG2S Gate Source Voltage
VG2S Gate Source Voltage
Figure Forward Transadmittance Gate Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
Document Number 85009 Rev. 20-Jan-99
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BF995
Output Capacitance
12165
VG2S=4V f=1MHz 700MHz
12167
VDS=15V VG2S=4V f=50.700MHz ID=5mA 10mA 20mA
f=50MHz 100MHz 200MHz 300MHz 400MHz 500MHz
600MHz
(y21)
Drain Source Voltage
Figure Output Capacitance Drain Source Voltage
12166
Figure Short Circuit Forward Transfer Admittance
12168
f=700MHz 600MHz 500MHz 400MHz 300MHz 200MHz 100MHz ID=20mA VDS=15V VG2S=4V ID=5.20mA f=50.700MHz
f=700MHz 600MHz 500MHz 400MHz 300MHz 200MHz 100MHz VDS=15V VG2S=4V ID=5.20mA f=50.700MHz
ID=5mA
(y11)
(y22)
Figure Short Circuit Input Admittance
Figure Short Circuit Output Admittance
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Document Number 85009 Rev. 20-Jan-99
BF995
Vishay Telefunken VG2S
120° j0.5 150° j0.2
180° 700MHz 0.04 0.08
-j0.2
120°
-150°
20mA 10mA -30° -30°
-j0.2
-120°
-60° -90°
Figure Forward transmission coefficient
Document Number 85009 Rev. 20-Jan-99
180°
-j0.5
-150° -30°
-120°
-60° -90°
Figure Input reflection coefficient
Figure Reverse transmission coefficient
j0.5 j0.2 700MHz
-j0.5
Figure Output reflection coefficient
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BF995
Vishay Telefunken Dimensions
12240
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Document Number 85009 Rev. 20-Jan-99
BF995
Vishay Telefunken Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
Document Number 85009 Rev. 20-Jan-99
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N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Appli

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