N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Appli
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BF988
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Applications
Input- mixer stages especially VHF- UHF- tuners.
Features
Integrated gate protection diodes High cross modulation performance noise figure High gain
9307 12647
High AGC-range feedback capacitance input capacitance
BF988 Marking: BF988 Plastic case Drain, Source, Gate Gate
12623
Absolute Maximum Ratings
Tamb 25_C, unless otherwise specified Parameter Drain source voltage Drain current Gate 1/Gate source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value ±IG1/G2SM Ptot Tstg +150 Unit
Tamb
Maximum Thermal Resistance
Tamb 25_C, unless otherwise specified Parameter Test Conditions Channel ambient glass fibre printed board 1.5) plated with 35mm Symbol RthChA Value Unit
Document Number 85007 Rev. 08-Jul-99
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BF988
Vishay Telefunken Electrical Characteristics
Tamb 25_C, unless otherwise specified Parameter Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Gate source leakage current Gate source leakage current Drain current Test Conditions -VG1S -VG2S ±IG1S VG2S ±IG2S VG1S ±VG1S VG2S ±VG2S VG1S VG1S VG2S VG2S VG1S Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS BF988 BF988A BF988B IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) Unit
10.5
Gate source cut-off voltage Gate source cut-off voltage
Electrical Characteristics
VG2S Tamb 25_C, unless otherwise specified Parameter Forward transadmittance Gate input capacitance Gate input capacitance Feedback capacitance Output capacitance Power gain Test Conditions Type Symbol y21s Cissg1 Cissg2 Crss Coss 1.05 Unit
VG1S VG2S
range Noise figure
VG2S
16.5
DGps
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Document Number 85007 Rev. 08-Jul-99
BF988
Vishay Telefunken Common Source S-Parameters
VG2S Tamb 25_C, unless otherwise specified -0.02 -0.10 -0.31 -0.56 -0.87 -1.26 -1.59 -2.04 -2.42 -2.88 -3.39 -3.94 -4.46 -0.02 -0.11 -0.35 -0.62 -0.97 -1.39 -1.76 -2.25 -2.67 -3.16 -3.72 -4.30 -4.87 -0.01 -0.13 -0.37 -0.66 -1.02 -1.47 -1.85 -2.36 -2.80 -3.30 3.89 -4.49 -5.06 -7.8 -15.3 -22.8 -30.2 -37.3 -44.3 -50.9 -58.0 -64.4 -71.4 -78.3 -85.2 -91.8 -8.3 -16.1 -24.0 -31.6 -39.2 -46.4 -53.2 -60.3 -67.1 -74.1 -81.1 -88.0 -94.4 -8.4 -16.4 -24.5 -32.3 -39.8 -47.0 -54.1 -61.3 -67.9 -75.0 -82.0 -88.8 -95.2 6.01 5.87 5.69 5.42 5.17 4.85 4.54 4.25 4.02 3.78 3.42 3.21 3.01 7.84 7.70 7.49 7.21 6.93 6.59 6.27 5.97 5.71 5.46 5.07 4.85 4.63 8.62 8.46 8.26 7.96 7.66 7.33 6.98 6.68 6.42 6.15 5.75 5.52 5.30 168.4 156.3 144.2 132.9 121.5 110.6 100.4 90.2 80.6 70.8 60.5 51.6 42.0 168.5 156.6 144.8 133.6 122.5 111.9 101.9 92.1 82.8 73.3 63.3 54.6 45.4 168.6 156.8 145.2 134.0 122.9 112.3 102.6 92.8 83.7 74.3 64.6 56.0 46.9 -56.27 -50.61 -47.70 -46.19 -45.46 -45.84 -47.31 -48.19 -50.37 -49.48 47.92 -44.65 -41.76 -55.67 -50.01 -47.20 -45.60 -44.88 -45.25 -46.51 -47.19 -49.28 -48.99 -48.03 -45.15 -42.46 -55.26 -49.61 -46.70 -45.10 -44.38 -44.65 -45.72 -46.29 -48.18 -48.49 -47.93 -45.75 -43.05 83.0 76.6 70.9 65.6 60.6 55.4 58.6 63.3 81.5 115.6 131.7 153.0 159.8 83.0 76.4 70.3 65.1 60.0 54.5 57.4 61.4 76.0 107.1 123.3 147.6 157.0 83.0 76.3 70.3 64.9 59.7 54.3 57.0 60.0 71.9 98.7 114.8 141.2 153.4 -0.02 -0.06 -0.13 -0.20 -0.28 -0.36 -0.43 -0.49 -0.52 -0.54 -0.66 -0.66 -0.66 -0.04 -0.09 -0.16 -0.23 -0.31 -0.42 -0.48 -0.55 -0.58 -0.60 -0.73 -0.73 -0.73 -0.07 -0.12 -0.20 -0.27 -0.36 -0.47 -0.53 -0.61 -0.64 -0.66 --0.77 -0.79 -0.79 -3.6 -7.3 -10.6 -14.2 -17.5 20.5 -23.8 -26.8 -30.2 -33.4 -36.8 -40.1 -43.9 -3.7 -7.4 -10.8 -14.3 17.9 -20.9 -24.1 -27.3 -30.6 -33.8 -37.2 -40.6 -44.3 -3.7 -7.5 -11.0 -14.4 -18.0 -20.9 -24.2 -27.4 -30.6 -33.9 -37.3 -40.8 -44.5
ID/mA
f/MHz 1000 1100 1200 1300 1000 1100 1200 1300 3000 1000 1100 1200 1300
Document Number 85007 Rev. 08-Jul-99
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BF988
Vishay Telefunken Typical Characteristics (Tamb 25_C unless otherwise specified)
Total Power Dissipation Drain Current VG1S=
12159
VDS=
12817
-0.6
-0.2
Tamb Ambient Temperature
VG2S Gate Source Voltage
Figure Total Power Dissipation Ambient Temperature
Drain Current
12812
Figure Drain Current Gate Source Voltage
VG2S=
VG1S= 0.6V
issg1 Gate Input Capacitance
VDS=8V VG2S=4V f=1MHz
0.4V 0.2V -0.2V -0.4V
-1.5 -1.0 -0.5
Drain Source Voltage
12813
VG1S Gate Source Voltage
Figure Drain Current Drain Source Voltage
VDS= Drain Current -0.8
12816
Figure Gate Input Capacitance Gate Source Voltage
issg2 Gate Input Capacitance
VDS=8V VG1S=0 f=1MHz
VG2S=-1V -0.4
VG1S Gate Source Voltage
12814
VG2S Gate Source Voltage
Figure Drain Current Gate Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
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Document Number 85007 Rev. 08-Jul-99
BF988
Output Capacitance
12815
VG2S=4V VG1S=0 f=1MHz
12820
f=1300MHz
1000MHz 700MHz VDS=8V VG2S=4V ID=10mA f=100.1300MHz
400MHz 100MHz
Drain Source Voltage
(y11)
Figure Output Capacitance Drain Source Voltage
800MHz Transducer Gain -0.2V -0.4V
12818
Figure Short Circuit Input Admittance
1300MHz
12821
VDS=8V VG2S=4V f=100.1300MHz ID=5mA 10mA 20mA
f=100MHz
400MHz 700MHz 1000MHz
VG2S=-0.8V
-0.5
VG1S Gate Source Voltage
(y21)
Figure Transducer Gain Gate Source Voltage
y21s Forward Transadmittance
12819
Figure Short Circuit Forward Transfer Admittance
VDS=8V f=1MHz
VG2S=4V
f=1300MHz
1000MHz 700MHz 400MHz 100MHz 0.25 0.50 0.75 VDS=15V VG2S=4V ID=10mA f=100.1300MHz 1.00 1.25 1.50
12822
Drain Current
(y22)
Figure Forward Transadmittance Drain Current
Figure Short Circuit Output Admittance
Document Number 85007 Rev. 08-Jul-99
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BF988
Vishay Telefunken VG2S
120° j0.5 150° j0.2 1300MHz 1000
180° 0.04 0.08
-j0.2
120° 150° 1300MHz 1000
-j0.2 -150° -30°
-j0.5 -120°
-60° -90°
Figure Forward transmission coefficient
Figure Output reflection coefficient
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180°
1300MHz 1000 -j0.5
-150°
-30°
-120°
-60° -90°
Figure Input reflection coefficient
Figure Reverse transmission coefficient
j0.5
j0.2
1300MHz
Document Number 85007 Rev. 08-Jul-99
BF988
Vishay Telefunken Dimensions
12242
Document Number 85007 Rev. 08-Jul-99
www.vishay.de FaxBack +1-408-970-5600
BF988
Vishay Telefunken Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
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Document Number 85007 Rev. 08-Jul-99
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