N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Appli
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BF966S
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Applications
Input- mixer stages especially UHF-tuners.
Features
Integrated gate protection diodes High cross modulation performance noise figure
9307 12647
High AGC-range feedback capacitance input capacitance
BF966S Marking: BF966S Plastic case 1=Drain, 2=Source, 3=Gate 4=Gate
12623
Absolute Maximum Ratings
Tamb 25_C, unless otherwise specified Parameter Drain source voltage Drain current Gate 1/Gate source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value ±IG1/G2SM Ptot Tstg +150 Unit
Tamb
Maximum Thermal Resistance
Tamb 25_C, unless otherwise specified Parameter Test Conditions Channel ambient glass fibre printed board 1.5) plated with 35mm Symbol RthChA Value Unit
Document Number 85004 Rev. 20-Jan-99
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BF966S
Vishay Telefunken Electrical Characteristics
Tamb 25_C, unless otherwise specified Parameter Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Gate source leakage current Gate source leakage current Drain current Test Conditions -VG1S -VG2S ±IG1S VG2S ±IG2S VG1S ±VG1S VG2S ±VG2S VG1S VG1S VG2S BF966S BF966SA BF966SB Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) Unit
10.5
Gate source cut-off voltage Gate source cut-off voltage
VG2S VG1S
Electrical Characteristics
VG2S Tamb 25_C, unless otherwise specified Parameter Forward transadmittance Gate input capacitance Gate input capacitance Feedback capacitance Output capacitance Power gain range Noise figure Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss DGps 18.5 Unit
VG1S VG2S
VG2S
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Document Number 85004 Rev. 20-Jan-99
BF966S
Vishay Telefunken Typical Characteristics (Tamb 25_C unless otherwise specified)
Total Power Dissipation Drain Current
12159
12764
VDS=
VG1S=
Tamb Ambient Temperature
VG2S Gate Source Voltage
Figure Total Power Dissipation Ambient Temperature
Drain Current
12762
Figure Drain Current Gate Source Voltage
1.5V
issg1 Gate Input Capacitance
VG1S=
VG2S= 0.5V
VDS=15V VG2S=4V f=1MHz
-0.5V
Drain Source Voltage
12765
Drain Current
Figure Drain Current Drain Source Voltage
Figure Gate Input Capacitance Drain Current
2.00 Output Capacitance
Drain Current
12763
VDS=
VG2S=
1.75 1.50 1.25 1.00 0.75 0.50 0.25
VG2S=4V ID=10mA f=1MHz
12766
VG1S Gate Source Voltage
Drain Source Voltage
Figure Drain Current Gate Source Voltage
Figure Output Capacitance Drain Source Voltage
Document Number 85004 Rev. 20-Jan-99
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BF966S
issg2 Gate Input Capacitance
12767
VDS=15V VG1S=0 f=1MHz
12770
f=1300MHz ID=5mA ID=10mA 1000MHz 700MHz 400MHz VDS=15V VG2S=4V f=100.1300MHz ID=20mA
100MHz
VG2S Gate Source Voltage
(y11)
Figure Gate Input Capacitance Gate Source Voltage
Transducer Gain
12768
Figure Short Circuit Input Admittance
f=1300MHz ID=5mA 10mA 20mA 1000MHz 700MHz VDS=15V VG2S=4V f=100.1300MHz
200MHz
-0.5V
VG2S=-2.-3V
12772
-0.1 (y12)
VG1S Gate Source Voltage
Figure Transducer Gain Gate Source Voltage
12769
Figure Short Circuit Reverse Transfer Admittance
VDS=15V VG2S=4V f=100.1300MHz ID=5mA 10mA 20mA
Y21S Forward Transadmittance
VDS=15V f=1MHz
VG2S=4V
f=100MHz
400MHz 700MHz 1000MHz
0.5V
12771
1300MHz
Drain Current
(y21)
Figure Forward Transadmittance Drain Current
Figure Short Circuit Forward Transfer Admittance
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Document Number 85004 Rev. 20-Jan-99
BF966S
f=1300MHz
12773
ID=10mA ID=5mA 20mA 1000MHz 700MHz 400MHz VDS=15V VG2S=4V f=100.1300MHz
100MHz
(y22)
Figure Short Circuit Output Admittance
Document Number 85004 Rev. 20-Jan-99
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BF966S
Vishay Telefunken VG2S
120° j0.5 150° j0.2 1000
1300MHz 0.008 0.016
-j0.2
120° 150° 1000
180°
-150°
20mA 10mA -30° -30°
-j0.2
-j0.5 -120°
-60° -90°
Figure Forward transmission coefficient
Figure Output reflection coefficient
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1300MHz 1000 -j0.5
180°
-150°
20mA 10mA -30°
-120°
-60° -90°
Figure Input reflection coefficient
Figure Reverse transmission coefficient
j0.5
j0.2 1300MHz
1300MHz
Document Number 85004 Rev. 20-Jan-99
BF966S
Vishay Telefunken Dimensions
12242
Document Number 85004 Rev. 20-Jan-99
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BF966S
Vishay Telefunken Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
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Document Number 85004 Rev. 20-Jan-99
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