2N5830 TO-92 General Purpose Amplifier This device desi

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2N5830 TO-92 General Purpose Amplifier This device desi

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2N5830
2N5830
TO-92
General Purpose Amplifier
This device designed general purpose high voltage amplifiers discharge display driving. Sourced from Process 2N5551 characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
25°C unless otherwise noted
Parameter
Value
+150
Units
Operating Storage Junction Temperature Range
*These ratings limiting values above which serviceability semiconductor device impaired.
NOTES: These ratings based maximum junction temperature degrees These steady state limits. factory should consulted applications involving pulsed duty cycle operations.
Thermal Characteristics
Symbol
25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient
2N5830 83.3
Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
2N5830
General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Units
CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
CHARACTERISTICS*
Current Gain 0.15 0.25
VCE( sat)
Collector-Emitter Saturation Voltage
VBE( sat)
Base-Emitter Saturation Voltage
VBE(
Base-Emitter Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Small-Signal Current Gain Input Impedance Output Admittance Small-Signal Current Gain µmho
*Pulse Test: Pulse Width Duty Cycle 2.0%

2N5830 TO-92 General Purpose Amplifier This device desi

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